| Project/Area Number |
15201031
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
KOSHIDA Nobuyoshi National University Corporation Tokyo University of Agriculture and Technology, Graduate School, Institute of Symbiotic Science and Technology, Professor, 大学院・共生科学技術研究部, 教授 (50143631)
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| Co-Investigator(Kenkyū-buntansha) |
GELLOZ Bernard National University Corporation Tokyo University of Agriculture and Technology, Graduate School, Institute of Symbiotic Science and Technology, Research Associate, 大学院・共生科学技術研究部, 助手 (40343157)
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| Project Period (FY) |
2003 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥44,720,000 (Direct Cost: ¥34,400,000、Indirect Cost: ¥10,320,000)
Fiscal Year 2004: ¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2003: ¥27,950,000 (Direct Cost: ¥21,500,000、Indirect Cost: ¥6,450,000)
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| Keywords | Nanocrystalline Silicon / Multiple-tunneling effect / Ballistic transport / Time-of-flight analysis / Electron emission / Ballistic lighting / Simple-matrix drive / Flat panel display |
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| Research Abstract |
The generation mechanism of ballistic electrons in nanocrystalline silicon(nc-Si) diodes has been studied in terms of electron transport and emission. Some technological aspects for applications to flat panel display and ballistic lighting have also been investigated including possible combination with related thermo-acoustic functions. The results and significances are summarized as follows.
(1)Analysis of ballistic transport
-It was confirmed from measurements of the electron emission characteristics in either low-vacuum or atmospheric pressure that ballistic electrons are efficiently generated in the nc-Si layer, and that there is a definite correlation between the silicon nanostructure and the ballistic emission efficiency.
-From experimental analyses of the field and temperature dependencies of time-of-flight signals for the nc-Si layer using a picoseconds-width UV laser pulse, the ballistic transport mode was detected with a significantly enlarged drift velocity and mean free path.
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… More
Theoretical transport analyses suggest that electron-phonon scattering in nc-Si dot chains interconnected with tunnel oxides could be significantly suppressed due to a reduction in the effective deformation potential.
(2)Application studies
-Both the ballistic emission efficiency and the operation stability have been drastically improved by employing an appropriate annealing to reduce scattering losses at nc-Si interfaces.
-Based on practical advantages of the nc-Si emitter, a simple-matrix-drive 7.6'' full-color flat panel display has been developed using a polycrystalline silicon film deposited onto a glass substrate. In addition, it has been demonstrated that solid-state ballistic lighting device can be fabricated.
(3)Combination with related functions
-The visible luminescence and thermally induced ultrasonic emission properties of nc-Si devices were significantly improved in view of technological applications.
-Basic process technology was examined towards monolithic functional integration of ballistic effect, luminescence, and ultrasonic emission. Less
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