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Control of solid-phase reaction dynamics and carbon engineering for nanofabrication of group-IV

Research Project

Project/Area Number 15206004
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionNagoya University

Principal Investigator

ZAIMA Shigeaki  Nagoya University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (70158947)

Co-Investigator(Kenkyū-buntansha) SAKAI Akira  Nagoya University, Graduate School of Engineering, Associate Professor, 大学院・工学研究科, 助教授 (20314031)
NAKATSUKA Osamu  Nagoya University, Eco Topia Science Institute, Assistant Professor, エコトピア科学研究所, 助手 (20334998)
KONDO Hiroki  Nagoya University, Graduate School of Engineering, Assistant Professor, 大学院・工学研究科, 助手 (50345930)
Project Period (FY) 2003 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥46,150,000 (Direct Cost: ¥35,500,000、Indirect Cost: ¥10,650,000)
Fiscal Year 2005: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2004: ¥11,310,000 (Direct Cost: ¥8,700,000、Indirect Cost: ¥2,610,000)
Fiscal Year 2003: ¥29,250,000 (Direct Cost: ¥22,500,000、Indirect Cost: ¥6,750,000)
KeywordsSilicon / Carbon / Nickel / Silicide / Interface / Surface / Contact / Scanning Tunneling Microscope / シリコンゲルマニウム / 界面物件 / 表面物件
Research Abstract

In this project, we investigated the control of the thin film growth and the interfacial reaction between heterogeneous materials by the incorporation of C in order to the development of the nanofabrication of future Si ULSI devices. The following results were obtained :
(1) The effect of the C ion implantation on the crystalline and electrical properties of NiSi/Si(001) contacts has been investigated. The C implantation with a dose higher than 3×10^<14> cm^<-2> is effective to suppress the agglomeration of NiSi layers, and to prevent the increase in the sheet resistance of NiSi layers even after annealing at 750℃.
(2) The contact resistance of the NiSi/p^+-Si interface can be reduced by the C ion implantation with a dose of 3×10^<15> cm^<-2>. The redistribution of B atoms at the interface during the NiSi formation is suppressed with the incorporation of C, and the pile-up of B toward the interface is enhanced. As a result, the carrier concentration at the interface in the sample with C is higher than that without C, which leads to the reduction of the contact resistance.
(3) The effect of C on the initial growth of epitaxial NiSi_2 layers on Si(100) substrates has been investigated with the STM observation. The incorporation of C is effective to suppress the formation of {111} facets at the epitaxial NiSi_2/Si interface, and to enhance the isotropic growth of individual domains of epitaxial NiSi_2 islands. As a result, the flatness and the coverage of epitaxial NiSi_2 layers are improved with increasing the amount of deposited C atoms.
(4) The initial growth of Ge_<1-x>C_x layers on Si(001) substrates with the codeposition and the alternate deposition of Ge and C has been investigated with the STM observation. The Si-C bonds properly distributed on the surface are effective to suppress the formation of C cluster and the growth of Ge 3D islands, which leads to the homogeneous growth of Ge_<1-x>C_x layers.

Report

(4 results)
  • 2005 Annual Research Report   Final Research Report Summary
  • 2004 Annual Research Report
  • 2003 Annual Research Report
  • Research Products

    (20 results)

All 2005 2004 Other

All Journal Article (19 results) Publications (1 results)

  • [Journal Article] Initial growth behaviors of SiGeC in SiGe and C alternate deposition2005

    • Author(s)
      S.Takeuchi, O.Nakatsuka, Y.Wakazono, A.Sakai, S.Zaima, Y.Yasuda
    • Journal Title

      Materials Science in Semiconductor Processing 8

      Pages: 5-9

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Thermal stability and electrical properties of Ni-silicide on C-incorporated Si2005

    • Author(s)
      O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, S.Zaima, J.Murota, Y.Yasuda
    • Journal Title

      Proceedings of Advanced Metallization Conference 2004 (AMC2004) 293

      Pages: 293-298

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Improvement in NiSi/Si contact properties with C-implantation2005

    • Author(s)
      O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, Y.Yasuda, S.Zaima
    • Journal Title

      Microelectronic Engineering 82

      Pages: 479-484

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Fabrication technology of SiGe hetero-structures and their properties2005

    • Author(s)
      Y.Shiraki, A.Sakai
    • Journal Title

      Surface Science Reports 59

      Pages: 153-207

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Initial growth behaviors of SiGeC in SiGe and C alternate deposition2005

    • Author(s)
      S.Takeuchi, O.Nakatsuka, Y.Wakazono, A.Sakai, S.Zaima, Y.Yasuda
    • Journal Title

      Materials Science in Semiconductor Processing 8 (1-3)

      Pages: 5-9

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Thermal stability and electrical properties of Ni-silicide on C-incorporated Si2005

    • Author(s)
      O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, S.Zaima, J.Murota, Y.Yasuda
    • Journal Title

      Proceedings of Advanced Metallization Conference 2004 (AMC2004)

      Pages: 293-298

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Improvement in NiSi/Si contact properties with C-implantation2005

    • Author(s)
      O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, Y.Yasuda, S.Zaima
    • Journal Title

      Microelectronic Engineering 82 (3-4)

      Pages: 479-484

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Fabrication technology of SiGe hetero-structures and their properties2005

    • Author(s)
      Y.Shiraki, A.Sakai
    • Journal Title

      Surface Science Reports 59 (7-8)

      Pages: 153-207

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Improvement in NiSi/Si contact properties with C-implantation2005

    • Author(s)
      O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, Y.Yasuda, S.Zaima
    • Journal Title

      Microelectronic Engineering 82(3-4)

      Pages: 479-484

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Fabrication technology of SiGe hetero-structures and their properties2005

    • Author(s)
      Y.Shiraki, A.Sakai
    • Journal Title

      Surface Science Reports 59(7-8)

      Pages: 153-207

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Influence of C incorporation on the initial growth of epitaxial NiSi_2 on Si(100)2004

    • Author(s)
      E.Okada, O.Nakatsuka, S.Oida, A.Sakai, S.Zaima, Y.Yasuda
    • Journal Title

      Applied Surface Science 237

      Pages: 150-155

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] SiおよびSi_<1-x-y>Ge_xC_y上のNiシリサイド形成2004

    • Author(s)
      中塚理, 酒井朗, 財満鎭明, 安田幸夫
    • Journal Title

      電気学会研究会資料(電子材料研究会) EFM-04

      Pages: 25-30

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Influence of C incorporation on the initial growth of epitaxial NiSi_2 on Si(100)2004

    • Author(s)
      E.Okada, O.Nakatsuka, S.Oida, A.Sakai, S.Zaima, Y.Yasuda
    • Journal Title

      Applied Surface Science 237 (1-4)

      Pages: 150-155

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Silicide Formation on Si and Si_<1-x-y>Ge_xC_y2004

    • Author(s)
      O.Nakatsuka, A.Sakai, S.Zaima, Y.Yasuda
    • Journal Title

      Reports of DENKI GAKKAI KENKYUUKAI (DENSHI ZAIRYOU KENKYUUKAI) EFM-04

      Pages: 25-30

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Influence of C incorporation on the initial growth of epitaxial NiSi_2 on Si(100)2004

    • Author(s)
      E.Okada, O.Nakatsuka, S.Oida, A.Sakai, S.Zaima, Y.Yasuda
    • Journal Title

      Applied Surface Science 237(1-4)

      Pages: 150-155

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Si及びSi_<1-x-y>Ge_xC_y上のNiシリサイド形成2004

    • Author(s)
      中塚理, 酒井朗, 財満鎭明, 安田幸夫
    • Journal Title

      電気学会研究会資料(電子材料研究会) EFM-04

      Pages: 25-30

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Initial growth behaviors of SiGeC in SiGe and C alternate deposition2004

    • Author(s)
      S.Takeuchi, O.Nakatsuka, Y.Wakazono, A.Sakai, S.Zaima, Y.Yasuda
    • Journal Title

      Materials Science and Semiconductor Processing 8(1-3)

      Pages: 5-9

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Thermal stability and electrical properties of Ni-silicide on C-incorporated Si

    • Author(s)
      O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, S.Zaima, J.Murota, Y.Yasuda
    • Journal Title

      Proceedings of Advanced Metallization Conference 2004 (AMC2004) (印刷中)

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Control of Ni/Si interfacial reaction and NiSi technology for ULSI applications

    • Author(s)
      S.Zaima, O.Nakatsuka, A.Sakai, Y.Yasuda
    • Journal Title

      Proceedings of IUMRS International Conference in Asia 2004 (印刷中)

    • Related Report
      2004 Annual Research Report
  • [Publications] E.Okada, O.Nakatsuka, S.Oida, A.Sakai, S.Zaima, Y.Yasuda: "Influence of C incorporation on the initial growth of epitaxial NiSi_2 on Si(100)"Applied Surface Science. (印刷中).

    • Related Report
      2003 Annual Research Report

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Published: 2003-04-01   Modified: 2016-04-21  

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