| Project/Area Number |
15206010
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | Laboratory of Advanced Science and Technology for Industry, University of Hyougo (2004-2005)
Himeji Institute of Technology (2003) |
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Principal Investigator |
KINOSHITA Hiroo University of Hyogo, LASTI, Professor (50285334)
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| Co-Investigator(Kenkyū-buntansha) |
WATANABE Takeo University of Hyogo, LASTI, Assistant (70285336)
KAKUNAI Satoshi University of Hyogo, Engineering Dep., Professor (10101130)
新部 正人 姫路工業大学, 高度産業科学技術研究所, 助教授 (10271199)
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| Project Period (FY) |
2003 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥44,980,000 (Direct Cost: ¥34,600,000、Indirect Cost: ¥10,380,000)
Fiscal Year 2005: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
Fiscal Year 2004: ¥10,920,000 (Direct Cost: ¥8,400,000、Indirect Cost: ¥2,520,000)
Fiscal Year 2003: ¥26,780,000 (Direct Cost: ¥20,600,000、Indirect Cost: ¥6,180,000)
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| Keywords | X-ray microscope / Extreme Ultraviolet / EUV Lithography / Defect Inspection / Phase defect / Mirau Interferometer / Multilayer coating / EUVリソグラフィー / ミラウ干渉計 |
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| Research Abstract |
We constructed the EUV microscope (EUVM) for actinic mask inspection which consists of Schwarzschild optics (NA0.3, 30X) and X-ray zooming tube. Using this system, EUVL finished mask and Mo/Si glass substrates are inspected. EUVM image of 250nm width pattern on 6025 Grass mask was clearly observed. Resolution can be estimated to be 50nm or less from this pattern. The programmed phase defect on the glass substrate is also used for inspection. By using EUV microscope, programmed phase defect with a width of 90nm, 100nm, 110nm, a bump of 5nm in height and a length of 400m□ can be observed finely. And the programmed phase defect of 100nm-wide and 2nm height pit was also observed. Moreover, a programmed defect with a width of 500nm is observed as two lines. This is because phase change produced with the edge of both sides of a programmed defect. Thus, in this research, observation of a program phase defect was advanced using the EUV microscope, and it succeeded in observation of the topological defect image inside a multilayer film. These results show that it is possible to catch internal reflectance distribution of multilayer under the EUV microscope, without being dependent on surface figure.
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