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Fabrication of Photonic Crystals by Selective-Area Metalorganic Vapor Phase Epitaxy and Their Application to Devices

Research Project

Project/Area Number 15206030
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionHOKKAIDO UNIVERSITY

Principal Investigator

MOTOHISA Junichi  Hokkadido University, Research Center for Integrated Quantum Electronics, Associate Professor, 量子集積エレクトロニクス研究センター, 助教授 (60212263)

Co-Investigator(Kenkyū-buntansha) FUKUI Takashi  Hokkadido University, Graduate School of Information Science and Technology, Professor, 大学院・情報科学研究科, 教授 (30240641)
SANO Eiichi  Hokkadido University, Research Center for Integrated Quantum Electronics, Professor, 量子集積エレクトロニクス研究センター, 教授 (10333650)
YANG Lin  Hokkadido University, Research Center for Integrated Quantum Electronics, Researcher, 量子集積エレクトロニクス研究センター, 非常勤研究員 (60374708)
SATO Taketomo  Hokkadido University, Research Center for Integrated Quantum Electronics, Associate Professor, 量子集積エレクトロニクス研究センター, 助教授 (50343009)
プリミーラ モハン  北海道大学, 量子集積エレクトロニクス研究センター, 研究機関研究員
Project Period (FY) 2003 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥50,180,000 (Direct Cost: ¥38,600,000、Indirect Cost: ¥11,580,000)
Fiscal Year 2005: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
Fiscal Year 2004: ¥13,260,000 (Direct Cost: ¥10,200,000、Indirect Cost: ¥3,060,000)
Fiscal Year 2003: ¥26,260,000 (Direct Cost: ¥20,200,000、Indirect Cost: ¥6,060,000)
KeywordsPhotonics Crystals / MOVPE Growth / Selective Area Growth / Photonics Crystal Slabs / Photoluminescence / Light Extraction Efficiency / Point / Line defect / Photonic Bands / 線欠陥導波路 / 点欠陥共振器 / whispering gallery mode
Research Abstract

We have established a method to fabricate two-dimensional crystals (2D-PhCs) and 2D-PhC slabs (2D-PhCs) by utilizing selective area metalorganic vapor phase epitaxial (SA-MOVPE) and investigated their optical properties. By doing SA-MOVPE growth on GaAs (111)B or InP(111)B substrates partially covered with periodic array of hexagonal masks, we have fabricated air-hole array of GaAs- and InP-based semiconductors. If the SA-MOVPE is carried out on sacrificial AIGaAs layer, For GaAs-based 2D-PhCs, we have succeeded in the fabrication of air-bridge-type 2D-PhCs and 2D-PhCs with line-defect and point-defect structures. We also have succeeded in the formation of GaAs/AlGaAs quantum wells with periodic air-holes and confirmed their photoluminescence (PL). InP- based 2D-PhCs with period of 400-500nm were also successfully formed after optimization of growth conditions. Emission from InP/InGaAs quantum well structures embedded in 2D-PhC was also fabricated and their optical properties were inve … More stigated PL, demonstrated that this structure is promising for the application of photonic devices operating in the optical-fiber communication wavelength. In addition, GaAs- and InP- based 2D-PhCs constructed from periodic array of hexagonal pillar arrays were also fabricated by SA-MOVPE on (111)B GaAs and (111)A InP substrates, respectively, where array of circular mask opening are defined. In particular, for GaAs-based pillar-type 2D-PhCs, it was found that the light emission from GaAs/AIGaAs quantum wells formed on the top of the pillars is found to dependent on the pitch of the pillar arrays and is enhanced by factor of 10 as compared to the reference planar structure. This phenomenon is qualitatively understood by the enhancement of light-extraction efficiency originating from the formation of photonic bandstructure by the introduction of the periodic structure on the top of high-index slabs. The optical properties 2D-PhCs and 2D-PhCSs, such as photonic bandstructures, dispersion of line-defect waveguides, transmittance and reflectivity, are also investigated theoretically using finite-difference-time-domain method, plane-wave expansion method, and scattering matrix method to understand the optical properties of 2D-PhCs and 2D-PhCSs, including a proposal of modified effective index method applicable to 2D-PhCs with high index contrasts. Less

Report

(4 results)
  • 2005 Annual Research Report   Final Research Report Summary
  • 2004 Annual Research Report
  • 2003 Annual Research Report
  • Research Products

    (53 results)

All 2006 2005 2004 2003 Other

All Journal Article (47 results) Publications (6 results)

  • [Journal Article] Photonic Crystal Slabs with Hexagonal Air Holes Fabricated by Selective Area Metal Organic Vapor Phase Epitaxy2006

    • Author(s)
      Lin Yang
    • Journal Title

      Sensors and Actuators A (To be published in)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] 半導体ナノワイヤとナノデバイス応用2006

    • Author(s)
      本久 順一
    • Journal Title

      応用物理 75・3

      Pages: 296-302

    • NAID

      10020530831

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Semiconductor Nanowires and Their Application to Nanodevices (in Japanese)2006

    • Author(s)
      Junichi Motohisa, Takashi Fukui
    • Journal Title

      Oyo Buturi 75

      Pages: 296-302

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Photonic Crystal Slabs with Hexagonal Air Holes Fabricated by Selective Area Metal Organic Vapor Phase Epitaxy2006

    • Author(s)
      Lin Yang, Junichi Motohisa, Junichiro Takeda, Takashi Fukui
    • Journal Title

      Sensors and Actuators A (To be published)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application to Waveguides2005

    • Author(s)
      Ling Yang
    • Journal Title

      Japanese Journal of Applied Physics 44・4B

      Pages: 2531-2536

    • NAID

      10015704763

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Photoluminescnce from single hexagonal nano-wire grown by selective area MOVPE2005

    • Author(s)
      S.Hara
    • Journal Title

      Inst. Phys. Conf. Ser. 184

      Pages: 393-398

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Suggested procedure for the use of the effective-index method for high-index-contrast photonic crystal slabs2005

    • Author(s)
      Ling Yang
    • Journal Title

      Optics Engineering 44

      Pages: 78002-78002

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy2005

    • Author(s)
      J.Noborisaka
    • Journal Title

      Applied Physics Letters 86

      Pages: 213102-213102

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays2005

    • Author(s)
      Premila Mohan
    • Journal Title

      Nanotechnology 16

      Pages: 2903-2907

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Selective-area MOVPE fabrication of GaAs hexagonal air-hole arrays on GaAs (111)B substrates using flow-rate modulation mode2005

    • Author(s)
      Junichiro Takeda
    • Journal Title

      Nanotechnology 16

      Pages: 2954-2957

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Promising low-damage fabrication method for the photonic crystals with hexagonal or triangular air holes : selective area metal organic vapor phase epitaxy2005

    • Author(s)
      Lin Yang
    • Journal Title

      Optics Express 13・26

      Pages: 10823-10832

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Photoluminescnce from single hexagonal nano-wire grown by selective area MOVPE2005

    • Author(s)
      S.Hara, J.Motohisa, J.Noborisaka, J.Takeda, T.Fukui
    • Journal Title

      Inst.Phys.Conf.Ser. No 184

      Pages: 393-398

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Photonic Crystal Slabs with Hexagonal Optical Atoms, Their Application in Waveguides2005

    • Author(s)
      L.Yang, J.Motohisa, T.Fukui
    • Journal Title

      Jpn.J.Appl.Phys Vol.44, No.4B

      Pages: 2531-2536

    • NAID

      10015704763

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Suggested procedure for the use of the effective-index method for high-index-contrast photonic crystal slabs2005

    • Author(s)
      Lin Yang, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Opt.Eng. 44

      Pages: 78002-78002

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy2005

    • Author(s)
      Jinichiro Noborisaka, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Appl. Phys. Lett. 86

      Pages: 213102-213102

    • NAID

      120000960844

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays2005

    • Author(s)
      Premila Mohan, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Nanotechnology 16

      Pages: 2903-2907

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Selective-area MOVPE fabrication of GaAs? hexagonal air-hole arrays on GaAs?(111)B substrates using flow-rate modulation mode2005

    • Author(s)
      Junichiro Takeda, Masashi Akabori, Junichi Motohisa, Richard N?tzel, Takashi Fukui
    • Journal Title

      Nanotechnology 16

      Pages: 2954-2957

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Photoluminescnce from single hexagonal nano-wire grown by selective are a MOVPE2005

    • Author(s)
      S.Hara
    • Journal Title

      Inst.Phys.Conf.Ser. 184

      Pages: 393-398

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides2005

    • Author(s)
      Ling Yang
    • Journal Title

      Jpn.J.Appl.Phys 44・4B

      Pages: 2531-2536

    • NAID

      10015704763

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Suggested procedure for the use of the effective-index method for high-index contrast photonic crystal slabs2005

    • Author(s)
      Ling Yang
    • Journal Title

      Opt.Eng. 44

      Pages: 78002-78002

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy2005

    • Author(s)
      J.Noborisaka
    • Journal Title

      Appl.Phys.Lett. 86

      Pages: 213102-213102

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays,2005

    • Author(s)
      P.Mohan
    • Journal Title

      Nanotechnology 16

      Pages: 2903-2907

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Selective-area MOVPE fabrication of GaAs hexagonal air-hole arrays on GaAs (111)B substrates using flow-rate modulation mode.2005

    • Author(s)
      Junichiro Takeda
    • Journal Title

      Nanotechnology 16

      Pages: 2954-2957

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Promising low-damage fabrication method for the photonic crystals with hexagonal or triangular air holes: selective area metal organic vapor phase epitaxy2005

    • Author(s)
      Lin Yang
    • Journal Title

      Optics Express 13・26

      Pages: 10823-10832

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals2004

    • Author(s)
      Masaru Inari
    • Journal Title

      Physica E 21

      Pages: 620-624

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Growth of GaAs/AlGaAs hexiagonal pillars on GaAs (111)B surfaces by selective-area MOVPE2004

    • Author(s)
      Junichi Motohisa
    • Journal Title

      Physica E 3-4・23

      Pages: 298-304

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Growth and optical properties of 2D photonic crystals based on hexagonal GaAs/AlGaAs pillar arrays by selective-area metalorganic vapor phase epitaxy2004

    • Author(s)
      Junichi Motohisa
    • Journal Title

      Material Research Society Proceedings 797

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates2004

    • Author(s)
      Junichi Motohisa
    • Journal Title

      Journal of Crystal Growth 1-4・272

      Pages: 180-185

    • NAID

      120000954504

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs(111)A substrates using selective-area MOVPE2004

    • Author(s)
      Junichiro Takeda
    • Journal Title

      Journal of Crystal Growth 1-4・272

      Pages: 570-575

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy2004

    • Author(s)
      Premila Mohan
    • Journal Title

      Applied Physics Letters 84・14

      Pages: 2664-2666

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary 2004 Annual Research Report
  • [Journal Article] Growth and optical properties of 2D photonic crystals based on hexiagonal GaAs/AIGaAs pillar arrays by selective-area metalorganic vapor phase epitaxy2004

    • Author(s)
      J.Motohisa Takeda, M.Inari, T.Fukui
    • Journal Title

      Mat.Res.Soc.Proc. Vol.797

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals2004

    • Author(s)
      M.Inari, J.Takeda, J.Motohisa, T.Fukui
    • Journal Title

      Physica E Vol.21, No.2-4

      Pages: 620-624

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Realization of InAs?-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy2004

    • Author(s)
      Premila Mohan, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Applied Physics Letters Volume 84, Issue 14

      Pages: 2664-2666

    • NAID

      120000956837

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Growth of GaAs?/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE2004

    • Author(s)
      J.Motohisa, J.Takeda, M.Inari, J.Noborisaka, T.Fukui
    • Journal Title

      Physica E v 23, n 3-4

      Pages: 298-304

    • NAID

      120000958778

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates2004

    • Author(s)
      J.Motohisa J.Noborisaka, J.Takeda, M.Inari, T.Fukui
    • Journal Title

      Journal of Crystal Growth v 272, n 1-4

      Pages: 180-185

    • NAID

      120000954504

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE2004

    • Author(s)
      Junichiro Takeda, Masaru Inari, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Journal of Crystal Growth Volume 272, 1-4

      Pages: 570-575

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE2004

    • Author(s)
      J.Motohisa
    • Journal Title

      Physica E 3-4・23

      Pages: 298-304

    • NAID

      120000958778

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates2004

    • Author(s)
      J.Motohisa
    • Journal Title

      Journal of Crystal Growth 1-4・272

      Pages: 180-185

    • NAID

      120000954504

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE2004

    • Author(s)
      Junichiro Takeda
    • Journal Title

      Journal of Crystal Growth 1-4・272

      Pages: 570-575

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy2003

    • Author(s)
      Premila Mohan
    • Journal Title

      Applied Physics Letters 83・4

      Pages: 689-691

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Single-electron AND/NAND logic circuits based on a self-organized dot network2003

    • Author(s)
      Fumito Nakajima
    • Journal Title

      Applied Physics Letters 83・13

      Pages: 2680-2682

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] InGaAs nano-pillar array formation on partially masked InP (111)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application2003

    • Author(s)
      Masashi Akabori
    • Journal Title

      Nanotechnology 14・10

      Pages: 1071-1074

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy2003

    • Author(s)
      P.Mohan, F.Nakajima, M.Akabori, J.Motohisa, T.Fukui
    • Journal Title

      Appl.Phys.Lett. Vol.83, No.4

      Pages: 689-691

    • NAID

      120000952950

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] InGaAs nano-pillar array formation on partially masked InP (111)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application2003

    • Author(s)
      M.Akabori, J.Takeda, J.Motohisa, T.Fukui
    • Journal Title

      Nanotechnology Vol.14, No.10

      Pages: 1071-1074

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Single-electron AND/NAND logic circuits based on a self-organized dot network2003

    • Author(s)
      F.Nakajima, Y.Miyoshi, J.Motohisa, T.Fukui
    • Journal Title

      Appl.Phys.Lett. Vol.83, No.13

      Pages: 2680-2682

    • NAID

      120000953010

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Promising low-damage fabrication method for the photonic crystals with hexagonal or triangular air holes : selective area metal organic vapor phase epitaxy

    • Author(s)
      Lin Yang, Junichi Motohisa, Junichiro Takeda, Takashi Fukui
    • Journal Title

      Optics Express Vol.13, No.26

      Pages: 10823-10832

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application to Waveguides

    • Author(s)
      Lin Yang
    • Journal Title

      Jpn.J.Appl.Phys. (発表予定)

    • NAID

      10015704763

    • Related Report
      2004 Annual Research Report
  • [Publications] Premila Mohan: "Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy"Applied Physics Letters. 83・4. 689-691 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Fumito Nakajima: "Single-electron AND/NAND logic circuits based on a self-organized dot network"Applied Physics Letters. 83・13. 2680-2682 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Masashi Akabori: "InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application"Nanotechnology. 14・10. 1071-1074 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Masaru Inari: "Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals"Physica E. (to be published). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Junichi Motohisa: "Growth of GaAs/AlGaAs hexiagonal pillars on GaAs (111)B surfaces by selective-area MOVPE"Physica E. (to be published). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Junichi Motohisa: "Growth and optical properties of 2D photonic crystals based on hexagonal GaAs/AlGaAs pillar arrays by selective-area metalorganic vapor phase epitaxy"Proc.2003 MRS Fall Meetings. (to be published). (2004)

    • Related Report
      2003 Annual Research Report

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Published: 2003-04-01   Modified: 2016-04-21  

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