| Project/Area Number |
15206031
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
MUROTA Junichi Tohoku University, Research Institute of Electrical Communication, Professor, 電気通信研究所, 教授 (70182144)
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| Co-Investigator(Kenkyū-buntansha) |
SAKURABA Masao Tohoku University, Research Institute of Electrical Communication, Associate Professor, 電気通信研究所, 助教授 (30271993)
TAKEHIRO Shinobu Tohoku University, Research Institute of Electrical Communication, Research Associate, 電気通信研究所, 助手 (70344736)
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| Project Period (FY) |
2003 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥49,790,000 (Direct Cost: ¥38,300,000、Indirect Cost: ¥11,490,000)
Fiscal Year 2005: ¥13,000,000 (Direct Cost: ¥10,000,000、Indirect Cost: ¥3,000,000)
Fiscal Year 2004: ¥12,610,000 (Direct Cost: ¥9,700,000、Indirect Cost: ¥2,910,000)
Fiscal Year 2003: ¥24,180,000 (Direct Cost: ¥18,600,000、Indirect Cost: ¥5,580,000)
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| Keywords | group-IV semiconductor / heterostructure / atomic layer growth / artificial crystal / chemical vapor deposition / epitaxial growth / SiGeC / 3-dimensional structure / MBE |
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| Research Abstract |
Purpose of this project is development of atomic layer-by-layer growth process for various kinds of hetero materials (e.g. Si, Ge, C and etc.) and creation of artificial crystal with atomically-controlled group-IV semiconductor heterostructures by using our established techniques of Langmuir-type adsorption and reaction control in chemical vapor deposition. It is found that atomic-order ultrathin film of C and N on Si-Ge group-IV semiconductor surface and subsequent Si epitaxial film on the surface at low temperature can be formed. This result enables to realize an atomic-layer doped group-IV semiconductor heterostructure. It is also found that, by C introduction, thermal stability of a Si atomic layer on Ge surface is improved and critical thickness of strained Si_<1-x>Ge_x epitaxial film on Si(100) is increased. In the case of Si epitaxial growth on the P atomic layer formed on strained Si_<1-x>Ge_x/Si(100), surface segregation phenomenon is effectively suppressed by use of Si_2H_6 instead of SiH_4 as a reactant gas, and maximum P atom concentration exceeds far above 10^<21>cm^<-3> at the heterointerface of Si_<1-x>Ge_x/Si. By using surface reaction enhancement under low-energy ECR Ar plasma irradiation, high quality epitaxial growth of atomic-order flat Si and strained Ge films without substrate heating is realized. Atomic-order nitridation control and subsequent Si epitaxial growth on the nitrided surface are also realized by the plasma process, and maximum N atom concentration reaches about 2x10^<21>cm^<-3> (atomic ratio of 4%) in the 2nm-thick ultrathin buried region. It is found that highly strained 1nm-thick Ge films can be epitaxially grown on Si(100). These results are very useful for realization of the high quality multilayer film with atomically-controlled group-IV semiconductor heterostructures.
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