Study of self assembled monolayer field effect transistors using the shadow mask evaporation technique
Project/Area Number |
15310103
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Microdevices/Nanodevices
|
Research Institution | Tokyo Institute of Technology |
Principal Investigator |
MAJIMA Yutaka Tokyo Institute of Technology, Graduate School of Science and Engineering, Associate Professor, 大学院・理工学研究科, 助教授 (40293071)
|
Co-Investigator(Kenkyū-buntansha) |
宮本 恭幸 東京工業大学, 大学院・理工学研究科, 助教授 (40209953)
|
Project Period (FY) |
2003 – 2005
|
Project Status |
Completed (Fiscal Year 2005)
|
Budget Amount *help |
¥13,500,000 (Direct Cost: ¥13,500,000)
Fiscal Year 2005: ¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 2004: ¥4,600,000 (Direct Cost: ¥4,600,000)
Fiscal Year 2003: ¥5,700,000 (Direct Cost: ¥5,700,000)
|
Keywords | self-assembled monolayer / monolayer / negative difference conductance / conductance switching / molecular nano-device / scanning probe microscopy / SAM / shadow mask / 電界効果トランジスタ / 変位電流 / トンネル電流 / FET |
Research Abstract |
Nanometer scale Au/4,4'-di(ethylphenyl)-5'-nitro-1-thioacetylbenzene self-assembled monolayer (nitro-OPE SAM) /Au junctions have been fabricated by using the shadow mask evaporation technique with an air-bridge structure based on EB lithography. 29 Au/nitro-OPE SAM/Au devices work within 324 devices. Negative differential conductance (NDC) in current - voltage characteristics and conductance switching in current - time characteristics have been observed. We also report conductance switching of single nitro-OPE molecule in alkanethiol SAMS by using sequential images by scanning tunneling microscopy.
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Report
(4 results)
Research Products
(31 results)