• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Photo-induced bond breaking and new phase formation on Si(001) surface

Research Project

Project/Area Number 15340101
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Condensed matter physics I
Research InstitutionOsaka University (2004)
Osaka City University (2003)

Principal Investigator

KANASAKI Jun'ichi  Osaka University, The Institute of Scientific and Industrial Research, Associate Professor, 産業科学研究所, 助教授 (80204535)

Co-Investigator(Kenkyū-buntansha) TANIMURA Katsumi  Osaka University, The Institute of Scientific and Industrial Research, Professor, 産業科学研究所, 教授 (00135328)
Project Period (FY) 2003 – 2004
Project Status Completed (Fiscal Year 2004)
Budget Amount *help
¥12,700,000 (Direct Cost: ¥12,700,000)
Fiscal Year 2004: ¥3,900,000 (Direct Cost: ¥3,900,000)
Fiscal Year 2003: ¥8,800,000 (Direct Cost: ¥8,800,000)
Keywordssemiconductor / surface / electronic excitation / laser beam / new phase formation / scanning tunneling microscope / silicon / tunneling spectroscopy / 新構造層 / 半導体表面 / 光誘起結合切断 / 電子励起効果 / レーザー光 / 空格子点
Research Abstract

1.We studied laser-induced bond breaking and new phase formation on Si(001)-(2x1) surfaces, and obtained the results as follows :
(1)Repeated irradiation induces progressive growth of vacancies as well as newly formation of monovacancies. Vacancy clusters elongated along dimer rows are predominantly formed on the surface, indicating a strong site-dependent rate of bond breaking
(2)Excitation above 100mJ/cm2 induces formation of ad-dimers on the terrace, and then ad-dimer islands are produced under repeated excitation Laser-induced ad-dimer formation disturbs the formation of defect-free atomic-leveled flat surface.
(3)Scanning tunneling microscopic(STM) study revealed that laser-induced removal of surface dimers forms a new phase, which has never been obtained by thermal processes. We succeeded in removing 95 % of surface dimers by repeated irradiation.
2.We studied structural instability of the Si(111)-(7x7) surface induced by low energy electron excitation, and obtained the following result.
(1)Low energy electron induces removal of adatoms from the Si(111)-(7x7) surface, rate of which is linear with respect to excitation flux and is strongly dependent on the primary energy of electron beam. We proposed plasmon-related bond breaking mechanism for explaining the electron-induced structural instability.

Report

(3 results)
  • 2004 Annual Research Report   Final Research Report Summary
  • 2003 Annual Research Report
  • Research Products

    (14 results)

All 2004 2003 Other

All Journal Article (10 results) Publications (4 results)

  • [Journal Article] Electronic Bond Rupture of Si-dimers on the Si(001)-(2x1)2004

    • Author(s)
      J.Kanasaki et al.
    • Journal Title

      Applied Physics A79

      Pages: 865-868

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Photoinduced Structural Instability of the InP(110)-(1x1) Surface2004

    • Author(s)
      T.Gotoh et al.
    • Journal Title

      Physical Review Letters 93・11

      Pages: 117401-117401

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] レーザービームによる半導体表面原子結合の局所的切断2004

    • Author(s)
      金崎順一, 谷村克己
    • Journal Title

      OYO BUTURI (in Japanese) 73・4

      Pages: 485-489

    • NAID

      10012857443

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Electronic Bond Rupture of Si-dimers on the Si(001)-(2x1)2004

    • Author(s)
      J.Kanasaki, K.Katoh, Y.Imanishi, K.Tanimura
    • Journal Title

      Applied Physics A 79

      Pages: 865-868

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Photoinduced Structural Instability of the InP(110)-(1x1) Surface2004

    • Author(s)
      T.Gotoh, S.Kotake, K.Ishikawa, J.Kanasaki, K.Tanimura
    • Journal Title

      Physical Review Letters 93(11)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Local bond breaking on semiconductor surfaces induced by laser beam2004

    • Author(s)
      J.Kanasaki, K.Tanimura
    • Journal Title

      OYO BUTURI (in Japanese) 74(4)

      Pages: 485-489

    • NAID

      10012857443

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] レーザービームによる半導体表面原子結合の局所的切断2004

    • Author(s)
      金崎順一, 谷村克己
    • Journal Title

      OYO BUTURI(in Japanese) 73・4

      Pages: 485-489

    • NAID

      10012857443

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Laser-Induced Electronic Bond Breaking and Desorption on Si(001) Surface2003

    • Author(s)
      J.Kanasaki, K.Tanimura
    • Journal Title

      Surface Science 528(1-3)

      Pages: 127-131

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Electronic Bond Rupture of Si Atoms on Si(111)-(2x1) Induced by 1-eV Photon Excitation2003

    • Author(s)
      E.Inami et al.
    • Journal Title

      Surface Science 528(1-3)

      Pages: 115-120

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Electronic Bond Rupture of Si Atoms on Si(111)-(2x1) Induced by 1-eV Photon Excitation2003

    • Author(s)
      E.Inami, K.Ishikawa, J.Kanasaki, K.Tanimura
    • Journal Title

      Surface Science 528(1-3)

      Pages: 115-120

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Publications] J.Kanasaki et al.: "Electronic Bond Rupture of Si-Dimers on the Si(001)-(2x1)"Applied Physics A. (in print). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] 金崎順一, 谷村克己: "レーザービームによる半導体表面原子結合の局所的切断"応用物理. 73巻4号(in print). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] J.Kanasaki, K.Tanirnura: "Laser-induced electronic bond breaking and desorption on Si(001)-(2x1)"Surface Science. 528・1-3. 127-131 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] E.Inami et al.: "Electronic bond rupture of Si atoms on Si(111)-(2x1) induced by 1.16-eV photon excitation"Surface Science. 528・1-3. 115-120 (2003)

    • Related Report
      2003 Annual Research Report

URL: 

Published: 2003-04-01   Modified: 2020-05-15  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi