Control of crystallization of solid He by acoustic radiation pressure and novel dynamics of quantum interface
Project/Area Number |
15340114
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Condensed matter physics II
|
Research Institution | Tokyo Institute of Technology |
Principal Investigator |
NOMURA Ryuji Tokyo Institute of Technology, Department of Science and Engineering, Research Associate, 大学院・理工学研究科, 助手 (00323783)
|
Co-Investigator(Kenkyū-buntansha) |
OKUDA Yuichi Tokyo Institute of Technology, Department of Science and Engineering, Professor, 大学院・理工学研究科, 教授 (50135670)
|
Project Period (FY) |
2003 – 2005
|
Project Status |
Completed (Fiscal Year 2005)
|
Budget Amount *help |
¥16,400,000 (Direct Cost: ¥16,400,000)
Fiscal Year 2005: ¥2,400,000 (Direct Cost: ¥2,400,000)
Fiscal Year 2004: ¥6,800,000 (Direct Cost: ¥6,800,000)
Fiscal Year 2003: ¥7,200,000 (Direct Cost: ¥7,200,000)
|
Keywords | Solid 4He / Ultrasound / SUperfluid / Crystal growth / Facet / Step / Acoustic radiation pressure / Quantum solids / 量子液体 / 異方的界面 / 非線形音響効果 / 高速界面運動 |
Research Abstract |
We observed the very fast growth of the c-facet of a S^4$He crystal induced by acoustic waves. The growth velocity cannot be explained by the spiral growth model for the known values of the step mobility. We developed a new crystal growth mechanism of the facet by high power acoustic waves. Considering the first order effect of the oscillating pressure of the acoustic wave, steps are accelerated to the order of the sound velocity. Collisions of such high speed steps can induce the multiplication of steps as Parshin and Tsymbalenko suggested and lead to the larger step density than that of the spiral growth. This model reproduces the observed power and temperature dependence well and also has a quantitative agreement with the experiment.
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Report
(4 results)
Research Products
(19 results)