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Crystal Growth of Free Standing 3C-SiC Using Air-Bridge Structure

Research Project

Project/Area Number 15360010
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionKyoto Institute of Technology

Principal Investigator

NISHINO Shigehiro  Kyoto Institute of Technology, Dept.of Electronics and Information Science, professor, 工芸学部, 教授 (30089122)

Co-Investigator(Kenkyū-buntansha) HAYASHI Yasuaki  Kyoto Institute of Technology, Dept.of Electronics and Information Science, professor, 工芸学部, 助教授 (30243116)
Project Period (FY) 2003 – 2004
Project Status Completed (Fiscal Year 2004)
Budget Amount *help
¥13,100,000 (Direct Cost: ¥13,100,000)
Fiscal Year 2004: ¥5,800,000 (Direct Cost: ¥5,800,000)
Fiscal Year 2003: ¥7,300,000 (Direct Cost: ¥7,300,000)
Keywordssilicon carbide / 3C-SiC / cubic SiC / heteroepitaxy / microchanel epitaxy / selective epitaxy / vapor phase growth / CVD / 立法晶SiC / ヘテロエピタキシャル成長 / 横方向成長 / 単結晶薄膜成長 / シリコンカーバイト / CVD法
Research Abstract

Silicon carbide(SiC) is a promising material for the next generation. Among SiC polytypes, Cubic SiC (3C-SiC) has advanced electrical properties, like high low-field electron mobility and high saturated electron drift velocity. Heteroepitaxial growth of 3C-SiC on Si substrates allows a significant cost advantage in the fabrication of large-diameter wafers. However, the lower quality of this material grown heteroepitaxially on Si has hindered its development. A large number of defects such as misfit dislocations, twins, stacking faults and cracks have been identified at the SiC/Si interface, owning to the mismatches in both the lattice constant and the thermal expansion coefficients between the 3C-SiC films and Si substrates.
This study reports on heteroepitaxial growth of 3C-SiC on Si substrate with air-bridge structure in order to reduce the high density of defects and the strain in the 3C-SiC epilayer. It has been necessary to investigate the epitaxial growth close to the 3C-SiC/Si in … More terface. 3C-SiC layer was grown mainly on a (111)-oriented silicon substrate by using Si2(CH3)6 (Hexamathyldisilane : HMDS). The crystallinity and surface morphology of 3C-SiC grown on Si(111) depended on the carbonization process. The diameter of each 3C-SiC island depended on the temperature of CVD growth at an early stage of epitaxial growth of 3C-SiC on Si substrate.
Three-dimensional fine was formed by using "micro-channel epitaxy(MCE)", "facet-initiated lateral epitaxial overgrowth(FILEO)", "air-bridged structural growth(ASG)" and "lateral epitaxial overgrowth(LEO)". FILEO, ASG and LEO have the fabrication procedure within two CVD growth steps. The crystallinity of ELO formed in MCE became like polycrystalline without the control of nucleation and growth. In FILEO, triangular pyramid of 3C-SiC was formed by {110} facet, owning to the difference of growth rate along between [110] and [111] direction. The crystallinity of bridged regions above air-gap was improved from Raman spectra, compared with seed regions combined Si substrate in ASG. The crystallinity of ELO regions was inferior to that of seed regions in LEO. This result may be improved by close control of experimental parameters at initial stage of 3C-SiC grown on Si substrates. Less

Report

(3 results)
  • 2004 Annual Research Report   Final Research Report Summary
  • 2003 Annual Research Report
  • Research Products

    (29 results)

All 2005 2004 Other

All Journal Article (26 results) Publications (3 results)

  • [Journal Article] Pendio epitaxial growth of 3C-SiC on Si subastrates2005

    • Author(s)
      A.Shoji, M.Nakamura, K.Mitikami, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 221-224

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Effect of the substrate off-axis on the suppression of twin formation in CVD growth of (111)3C-SiC on (110)Si substrate2005

    • Author(s)
      T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 193-196

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Lateral epitaxial overgrowth of 3C-SiC on Si substrates by CVD method2005

    • Author(s)
      S.Sugishita, A.Shoji, Y.Mukai, T.Nishiguchi, K.Michikami, T.Isshiki, S.Ohshima
    • Journal Title

      Materials Science Forum 483-485

      Pages: 177-180

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Suppression mechanism of double positioning growth in 3C-SiC(111) crystal by using an off-axis Si(110) substrate2005

    • Author(s)
      M.Nakamura, T.Isshiki, T.Nishiguchi, K.Nishio, S.Ohshima, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 181-184

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Influence of substrate roughness on the formation of defects in 3C-SiC grown on Si(110) substrates by hetero-epitaxial CVD method2005

    • Author(s)
      T.Isshiki, M.Nakamura, T.Nishiguchi, K.Nishio, S.Ohshima, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 185-188

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Suppression of the twin formation in CVD growth of (111)3C-SiC on (110)Si substrate2005

    • Author(s)
      T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 193-196

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Micorstuructures in the Pendio epitaxial layer of 3C-SiC on Si substrate2005

    • Author(s)
      A.Shoji, M.Nakamura, K.Mitikami, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 221-224

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Later Microfabrication of Si column covered with SiC film for electronn emitter2005

    • Author(s)
      T.Nakata, Y.Ohshirao, A.Shoji, Y.Okui, S.Ohshima, Y.Hayashi, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 237-240

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Later An in-situ post growth annnealing process for the improvement of 4H-SiC/SiO2 MOS interface prepared by CVD using TEOS, and its2005

    • Author(s)
      K.Kumaresan, H.Furuichi, K.Taguchi, S.Yukimoto, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 681-684

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition2005

    • Author(s)
      T.Nishiguchi, Y.Mukai, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science forum 483-485

      Pages: 221-224

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Pendio epitaxial growth of 3C-SiC on Si substrates2005

    • Author(s)
      A.Shoji, M.Nakamura, K.Mitikami, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 221-224

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Effect of the substrate off-axis on the suppression of twin formation in CVD growth of (111) 3C-SiC on (110) Si substrate2005

    • Author(s)
      T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 193-196

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Lateral epitaxial overgrowth of 3C-SiC on Si substrates by CVD method2005

    • Author(s)
      S.Sugishita, A.shoji, Y.Mukai, T.Nishiguchi, K.Michikami, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 177-180

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Suppression mechanism of double positioning growth in 3C-SiC(111) crystal by using an off-axis Si(110) substrate2005

    • Author(s)
      T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 181-184

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Influence of substrate roughness on the formation of defects in 3C-SiC grown on Si(110) substrates by hetero-epitaxial CVD method2005

    • Author(s)
      T.Isshiki, M.Nakamura, T.Nishiguchi, K.Nishino, S.Ohshima, S.Nishio
    • Journal Title

      Materials Science Forum 483-485

      Pages: 185-188

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Suppression of the twin formation in CVD growth of (111)3C-SiC on (110) Si substrate2005

    • Author(s)
      T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 193-196

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Microstructures in the Pendio epitaxial layer of 3C-SiC on Si substrate2005

    • Author(s)
      A.Shoji, M.Nakamura, K.Mitikami, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 221-224

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Later Microfabrication of Si column covered with SiC film for electron emitter2005

    • Author(s)
      T.Nakata, Y.Ohshirao, A.Shoji, Y.Okui, S.Ohshima, Y.Hayashi, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 237-240

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] An in-situ post growth annealing process for the improvement of 4H-SiC/SiO2 MO interface prepared by CVD using TEOS, and its characteristic study2005

    • Author(s)
      K.Kumaresan, H.Furuichi, K.Taguchi, S.Yukimoto, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 681-684

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Lateral epitaxial overgrowth of 3C-SiC on Si substrates by CVD method2005

    • Author(s)
      S.Sugishita, A.Shoji, Y.Mukai, T.Nishiguchi, K.Michikami, T.Isshiki, S.Ohshima, S.nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 177-180

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Infuence of substrate roughness on the formation of defects in 3C-SiC grown on Si(110) substrates by hetero-epitaxial CVD method2005

    • Author(s)
      T.Isshiki, M.Nakamura, T.Nishiguchi, K.Nishio, S.Ohshima, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 185-188

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Later An in-situ post growth annnealing process for the improvement of 4H-SiC/SiO2 MOS interface prepared by CVD using TEOS, and its characteristic study2005

    • Author(s)
      K.Kumaresan, H.Furuichi, K.Taguchi, S.Yukimoto, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 681-684

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Lateral epitaxial overgrowth and reduction in defect density of 3C-SiC on patterned Si2004

    • Author(s)
      A.R.Bushroa, C.Jacob, H.Saijo, S.Nishino
    • Journal Title

      J.Crystal Growth 271

      Pages: 200-206

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Raman microprobe mapping of residual microstresses in 3C-SiC film epitaxial lateral2004

    • Author(s)
      C.J.Lee, G.Pezzottie, Y.Okui, S.Nishino
    • Journal Title

      Applied Surface Science 228

      Pages: 10-16

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Structural Analysis of (211)3C-SiC on (211)Si Substrates Grown by Chemical Vapor Deposition2004

    • Author(s)
      T.Nishiguchi, Y.Mukai, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Mater.Sci.Forum 457-460

      Pages: 285-288

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Raman microprobe mapping of residual microstresses in 3C-SiC film epitaxial lateral growth2004

    • Author(s)
      C.J.Lee, G.Pezzottie, Y.Okui, S.Nishino
    • Journal Title

      Applied Surface Science 228

      Pages: 10-16

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Publications] Taro Nishiguchi, Yusuke Mukai, Satoru Ohshima, Shigehiro Nishino: "CVD growth of 3C-SiC on various orientations of Si substrates for the substrate of nitride semiconductors"Phys.Stat.Sol.. (c)0,NO.7. 2583-2588 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] A.Shoji, Y.Okui, T.Nishiguchi, S.Ohshima, S.Nishino: "Pendio epitaxial growth of 3C-SiC on Si substrates"Materials Science forum. (to be published). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Nishiguchi, Y.Mukai, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino: "Structural analysis of (211) 3C-SiC on (211)Si substrates grown by chemical vapor deposition"Materials Science forum. (to be published). (2004)

    • Related Report
      2003 Annual Research Report

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Published: 2003-04-01   Modified: 2016-04-21  

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