| Project/Area Number |
15360018
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
HIRAYAMA Hiroyuki Tokyo Institute of Technology, Interdisciplinary Graduate School of Science & Engineering, Professor, 大学院・総合理工学研究科, 教授 (60271582)
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| Project Period (FY) |
2003 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥14,400,000 (Direct Cost: ¥14,400,000)
Fiscal Year 2005: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 2004: ¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2003: ¥11,500,000 (Direct Cost: ¥11,500,000)
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| Keywords | quantum confinement / surfaces & interfaces / nanostructures / optical second harmonic generation / scanning tunneling microscope / surface electronic states / ナノ島 / 銀 / シリコン表面 / 光第二高調波発 |
|---|
| Research Abstract |
We studied the nucleation of flat-top, nano Ag islands of a uniform height at clean Si(111)7x7 and H-terminated Si(111) surfaces. At these surfaces, Ag islands of atomically flat-top grow. In the Ag islands, the sp-band electrons are confined along surface normal direction, between the Ag island surface and Ag/Si interface to reveal quantum well states. In this study, we elucidated the relation between the height and the quantized electronic states of the confined electrons along surface normal direction using optical second harmonic generation (SHG) intensity oscillation and scanning tunneling microscope (STM)/ scanning tunneling spectroscopy (STS). We also calculated the quantum well states numerically by two-band model. The calculation agreed well with the experimental results.
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