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Spin-dependent transmission of highly polarized electrons through ferromagnet/semiconductor interfaces

Research Project

Project/Area Number 15360023
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionDaido Institute of Technology

Principal Investigator

SAKA Takashi  Daido Institute of Technology, College of Engineering, Professor, 工学部, 教授 (20115570)

Co-Investigator(Kenkyū-buntansha) JIMBO Mutsuko  Daido Institute of Technology, College of Engineering, Professor, 工学部, 教授 (00115677)
HORINAKA Hiromichi  Osaka Prefecture University, College of Engineering, Professor, 工学研究科, 教授 (60137239)
加藤 俊宏  大同特殊鋼(株), 新分野開発センター, 主任部員
Project Period (FY) 2003 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥11,700,000 (Direct Cost: ¥11,700,000)
Fiscal Year 2005: ¥2,600,000 (Direct Cost: ¥2,600,000)
Fiscal Year 2004: ¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 2003: ¥5,700,000 (Direct Cost: ¥5,700,000)
Keywordsspin polarization / spin filter / zincblend structure / ferromagnetic materials / photoelectron / circular polarization / GaAs / 垂直磁化 / GaTbFe / 砒化ガリウム
Research Abstract

A spin polarized electron beam emitted from a GaAs photocathode was injected into a thin ferromagnetic layer deposited on the GaAs photocathode and the spin-dependence of the transmission through the ferromagnet/semiconductor interface was investigated. Polarized electrons with opposite spin-polarizations were excited by irradiating with circularly polarized photons of opposite polarity. The ferromagnetic film was a 3nm thick layer of GdTbFe, and a thin oxide layer (2nm) was inserted between the film and the photocathode, which resulted in tunneling transmission of the electrons. After deposition, the film was magnetized in the direction perpendicular to the surface. Photo-currents with opposite spin polarizations were measured at room temperature. For electrons with the same polarization as that of the ferromagnetic films, the current was enhanced, while, on the other hand, the current was reduced in the case of the opposite polarization. In the present experiment, a p-GaAs substrate was used as the photocathode, and therefore the polarization of the photoelectrons was estimated as approximately 30〜35%. If a photocathode with a GaAs/GaAsP strained superlattice is used, a much clearer dependence is anticipated because polarization of more than 85% is expected.

Report

(4 results)
  • 2005 Annual Research Report   Final Research Report Summary
  • 2004 Annual Research Report
  • 2003 Annual Research Report
  • Research Products

    (26 results)

All 2006 2005 2004 2003 Other

All Journal Article (24 results) Publications (2 results)

  • [Journal Article] Preparation of Magnetic Tunnel transistors with Double Tunnel Junctions2006

    • Author(s)
      H.Nakanishi, H.Omae, Y.Fujiwara, M.Jimbo et al.
    • Journal Title

      J. Magn. Soc. japan. 30

      Pages: 188-191

    • NAID

      110004705379

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Magneto-current of magnetic tunnel transistors employing various Schottky Junctions2006

    • Author(s)
      T.Hirose, Y.Fujiwara, M.Jimbo, T.Kobayashi, S.Shiomi
    • Journal Title

      J.Magn. & Magn.Mat. 30

      Pages: 124-127

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Preparation of Mgnetic Tunnel Transistors with Double Tunnel Junctions2006

    • Author(s)
      H.Nakanishi, H.Omae, Y.Fujiwara, M.Jimbo, T.Kobayashi, S.Shiomi
    • Journal Title

      J.Magn.Soc.Japan 30

      Pages: 188-191

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Preparation of Magnetic Tunnel transistors with Double Tunnel Junctions2006

    • Author(s)
      H.Nakanishi, H.Omae, Y.Fujiwara, M.Jimbo*, T.Kobayashi, S.Shiomi
    • Journal Title

      J.Magn.Soc.Jpn. 30

      Pages: 188-191

    • NAID

      110004705379

    • Related Report
      2005 Annual Research Report
  • [Journal Article] スピン偏極電子線源とその分析への応用2005

    • Author(s)
      坂 貴
    • Journal Title

      ぶんせき 2号

      Pages: 97-100

    • NAID

      10014365235

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary 2004 Annual Research Report
  • [Journal Article] スピン偏極電子源2005

    • Author(s)
      中西彊 名大・KEK・阪府立大・大同工大のグループ
    • Journal Title

      日本学術振興会マイクロビームアナリシス第141委員会第119会研究会資料

      Pages: 19-28

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Highly polarized electrons from GaAs-GaAsP and InGaAs strained-layer supperlattice photocathodes2005

    • Author(s)
      T.Nishitani, et al.
    • Journal Title

      J. Appl. Phys 97

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Magneto current of magnetic transistors employing various Schottky junctions2005

    • Author(s)
      T.Hirose, Y.Fujiwara, M.Jimbo, et al.
    • Journal Title

      J. Magn. & Magn. Mat. 286

      Pages: 124-127

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Highly polarized electrons from GaAs-GaAsP and InGaAs-AlGaAs strained-layer supperlattice photocathodes2005

    • Author(s)
      T.Nishitani, T.Nakanishi, M.Yamamoto, S.Okumi, F.Furuta, M.Miyamoto, M.Kuwahara, N.Yamamoto, K.Naniwa, O.Watanabe, Y.Takeda, H.Kobayakawa, Y.Takashima, H.Horinaka, T.Matsuyama, K.Togawa, T.Saka, T.Kato, Y.Baba
    • Journal Title

      J.Appl.Phys. 97

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Highly polarized electrons from GaAs-GaAsP and InGaAs-AlGaAs strained-layer supperlattice photocathodes2005

    • Author(s)
      T.Nishitani, et al.
    • Journal Title

      J.Appl.Phys 97

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Magneto current of magnetic tunnel transistors employing various Schottky junctions2005

    • Author(s)
      T.Hirose, Y.Fujiwara, M.Jimbo, T.Kobayashi, S.Shiomi
    • Journal Title

      J.Magn. & Magn.Mat. 286

      Pages: 124-127

    • Related Report
      2005 Annual Research Report
  • [Journal Article] スピン偏極電子源2005

    • Author(s)
      中田彊, 名大, KEK, 阪府立大, 大同工大のグループ
    • Journal Title

      日本学術振興会マイクロビームアナリシス第141委員会第119会研究会資料

      Pages: 19-28

    • Related Report
      2004 Annual Research Report
  • [Journal Article] High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer2004

    • Author(s)
      H.Horinaka, T.Saka, T.Kato et al.
    • Journal Title

      Japan. J. Appl. Phys 43-8

      Pages: 3371-3375

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Dependence of Hot Electron Transport on Base Layer Thickness of Magnetic Tunnel Transistor2004

    • Author(s)
      M.Jimbo et al.
    • Journal Title

      Japan. J. Appl. Phys 43-5

      Pages: 2479-2483

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Transfer ratio of magnetic tunnel transistors with various Schottky materials2004

    • Author(s)
      M.Jimbo et al.
    • Journal Title

      Phys. Stat. Sol. (b) 241・7

      Pages: 1502-1505

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Dependence of Hot Electron Transport on Base Layer Thickness of Magnetic Tunnel Transistor2004

    • Author(s)
      T.Hirose, Y.Fujiwara, M.Jimbo, T.Kobayashi, S.Shiomi, M.Masuda
    • Journal Title

      Japan.J.Appl.Phys. 43

      Pages: 2479-2483

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source2004

    • Author(s)
      T.Matsuyama, H.Takikita, H.Horinaka, K.Wada, T.Nakanishi, S.Okumi, T.Nishitani, T.Saka, T.Kato
    • Journal Title

      Japan.J.Appl.Phys. 43

      Pages: 3371-3375

    • NAID

      10013154511

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Transfer ratio of magnetic tunnel transistors with various Schottky materials2004

    • Author(s)
      T.Hirose, Y.Fujiwara, M.Jimbo, T.Kobayashi, S.Shiomi
    • Journal Title

      phys.stat.sol.(b) 241

      Pages: 1502-1505

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer2004

    • Author(s)
      H.Horinaka, T.Saka, T.Kato et al.
    • Journal Title

      Japan.J.Appl.Phys. 43・8

      Pages: 3371-3375

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Dependence of Hot Electron Transport on Base Layer Thickness of Magnetic Tunnel Transistor2004

    • Author(s)
      M.Jimbo et al.
    • Journal Title

      Japan.J.Appl.Phys. 43・5

      Pages: 2479-2483

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Transfer ratio of magnetic tunnel transistors with various Schottky materials2004

    • Author(s)
      M.Jimbo et al.
    • Journal Title

      Phys.Stat.Sol.(b) 241・7

      Pages: 1502-1505

    • Related Report
      2004 Annual Research Report
  • [Journal Article] 高い偏極度、量子効率を併せ持つGaAs-GaAsP系歪み超格子フォトカソードの開発2003

    • Author(s)
      坂 貴, 加藤俊宏, 堀中博道 ほか16名
    • Journal Title

      第28回リニアック技術研究会資料

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Magnetoresistance Effect of Co/AIO[x]/NiFe/Au/n-Si Diode Structure2003

    • Author(s)
      神保睦子 ほか5名
    • Journal Title

      Japan. J. Appl. Phys. 42

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Magnetoresistance Effect of Co/AlO_x/NiFe/Au/n-Si Diode Structure2003

    • Author(s)
      Y.Fujiwara, T.Hirose, M.Jimbo, T.Kobayashi, M.Masuda
    • Journal Title

      Japan.J.Appl.Phys. 42

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Publications] 坂 貴, 加藤俊宏, 堀中博道ほか16名: "高い偏極度、量子効率を併せ持つGaAs-GaAsP系歪み超格子フォトカソードの開発"第28回リニアック技術研究会資料. (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] 神保睦子ほか5名: "Magnetoresistance Effect of Co/AlO[x]/NiFe/Au/n-Si Diode Structure"Jpn.J.Appl.Phys.. 42. L1009-L1011 (2003)

    • Related Report
      2003 Annual Research Report

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Published: 2003-04-01   Modified: 2016-04-21  

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