| Project/Area Number |
15360162
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | University of Yamanashi |
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Principal Investigator |
KONDOH Eiichi University of Yamanashi, Department of Research Interdisciplinary Graduate School of Medicine and Engineering, Associate Professor, 大学院・医学工学総合研究部, 助教授 (70304871)
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| Project Period (FY) |
2003 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥8,300,000 (Direct Cost: ¥8,300,000)
Fiscal Year 2005: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2004: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 2003: ¥5,800,000 (Direct Cost: ¥5,800,000)
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| Keywords | supercritical fluids / thin films / copper / platinum / ruthenium / zinc oxide / 電界放出素子 / NEMS / ナノマシン / ナノピラー / 集積回路 / 薄膜 |
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| Research Abstract |
This project was aimed to providing a novel and environmentally-friendly technology for depositing thin films for highly-integrated and highly-functioning device applications using supercritical carbon dioxide fluids.
In this project, we have developed a new deposition processor that allows independent control of deposition processor that functions like common thin film processors. Hydrogen reduction chemistry of Cu chelates was employed to deposit Cu thin films, minding to apply to ULSI metallization. It was found that Cu deposition proceeds through Langmuir-Hinshelwood deposition mechanism and that hydrogen chemisorption is the rate-determining step for Cu growth. Deposition comformability and gap-filling capability were also studied with respect to the deposition mechanism. The guiding principles for increasing deposition rate and improving gap-fill capability were found to be to promote hydrogen supply and its smooth chemisorption. The unreacted deposition precursor was collected at the exhaust of the deposition processor and was purified for its reuse/recyling.
New deposition chemistries were also studied such as for Pt, Ru, and ZnO deposition. Nano components for MEMS/NEMS applications, for instance, nano rods and thorough vias for 3-dimensional integrated circuits, were fabricated with these materials, availing deep and high-aspect ratio deposition capability of this technology.
In summary, we have accomplished our proposals on this technology and have succeeded to develop its new applications.
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