| Project/Area Number |
15360168
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Yamaguchi University |
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Principal Investigator |
MOROHASHI Shinichi Yamaguchi University, Faculty of Engineering, Professor, 工学部, 教授 (20304488)
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| Co-Investigator(Kenkyū-buntansha) |
MATSUO Hiroshi National Astronomical Observatory, A.Professor, 天文機器開発実験センター, 助教授 (90192749)
NOGUCHI Suguru National Astronomical Observatory, A.Professor, 電波天文学研究系, 助教授 (90237826)
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| Project Period (FY) |
2003 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥14,500,000 (Direct Cost: ¥14,500,000)
Fiscal Year 2005: ¥2,700,000 (Direct Cost: ¥2,700,000)
Fiscal Year 2004: ¥4,400,000 (Direct Cost: ¥4,400,000)
Fiscal Year 2003: ¥7,400,000 (Direct Cost: ¥7,400,000)
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| Keywords | Superconducting tunneling junction / Terahertz detector / Josephson junction / テラヘルツ光 / マグネトロンスパツタ / 電子ビーム励起プラズマ / トンネルバリア / Nb / Al-AlOx-Al / Nb接合 / スパッタ / ニオブ / タンタル |
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| Research Abstract |
A Nb/Al-AlOx-Al/Nb superconducting tunnel junction is expected as a highly sensitive detector for Terahertz imaging. In the use of a highly sensitive detector, it is necessary to reduce the sub-gap leakage current to the limit indicated in the BCS theory. For obtaining the junction with small sub-gap leakage current, we take a new approach, that is, a electron-beam excited sputtering technique, for fabricating the junction consisted of Nb layer, Al layer and tunneling barrier. We studied the deposition conditions for both Nb and Al layers, and the etching condition for Al layer using this system. The transition temperature of the Nb layer and the residual resistance ratio have indicated 9.3 K and more than 3. Fabricated Nb/AlOx-Al/Nb Josephson junction has exhibited SIS characteristics with the gap structure.
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