| Project/Area Number |
15360169
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Kyushu University |
|---|
Principal Investigator |
MIYAO Masanobu Kyushu University, Department of Electronics, Professor, 大学院・システム情報科学研究院, 教授 (60315132)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
SADOH Taizoh Kyushu University, Department of Electronics, Associate Professor, 大学院・システム情報科学研究院, 助教授 (20274491)
KENJO Atsushi Kyushu University, Department of Electronics, Research Associate, 大学院・システム情報科学研究院, 助手 (20037899)
|
|---|
| Project Period (FY) |
2003 – 2005
|
| Project Status |
Completed (Fiscal Year 2005)
|
| Budget Amount *help |
¥12,800,000 (Direct Cost: ¥12,800,000)
Fiscal Year 2005: ¥4,500,000 (Direct Cost: ¥4,500,000)
Fiscal Year 2004: ¥4,200,000 (Direct Cost: ¥4,200,000)
Fiscal Year 2003: ¥4,100,000 (Direct Cost: ¥4,100,000)
|
|---|
| Keywords | electron device / large-scale integrated circuit / display / silicon / crystal growth |
|---|
| Research Abstract |
Low temperature orientation control of SiGe quasi-single crystals and its device application have been investigated.
The solid-phase crystallization of a-Si/a-Ge/glass and a-Si/a-Ge/a-Si/glass stacked structures was studied systematically. It was found that two-dimensional nucleation was selectively induced by inserting Ge layers thicker than the critical thickness at the interface between the a-Si layer and the glass substrate. This is an important finding for orientation control of SiGe quasi-single crystals.
In addition, a novel device structure, suitable for low-temperature processing, was studied, and the fabrication process of the Schottky source/drain structure transistor was established at a low-temperature (≦450℃). Moreover, a good transistor operation of transistors fabricated on the glass substrate was demonstrated.
|
