Super Highly Sensitive Non visible Imaging Devices Using Vacuum Nano Technology
| Project/Area Number |
15360190
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Toyohashi University of Technology |
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Principal Investigator |
SAWADA Kazuaki Toyohashi University of Technology, Faculty of Engineering, Associate Professor, 工学部, 助教授 (40235461)
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| Co-Investigator(Kenkyū-buntansha) |
ISHIDA Makoto Toyohashi University of Technology, Faculty of Engineering, Professor, 工学部, 教授 (30126924)
TAKAO Hidekuni Toyohashi University of Technology, Faculty of Engineering, Associate Professor, 工学部, 助手 (40314091)
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| Project Period (FY) |
2003 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥13,200,000 (Direct Cost: ¥13,200,000)
Fiscal Year 2005: ¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 2004: ¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2003: ¥7,300,000 (Direct Cost: ¥7,300,000)
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| Keywords | vacuum / nano technology / Pyroelectric sensor / field emitter / image sensor / photocathode / silicon emitter / ferroelectric material / 焦電センサ |
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| Research Abstract |
The porous of this project was realization of a visible photocathode with high sensitivity, and infrared photocathode which can detect above 2 micron wavelength.
A new type photodetector called "photosensitive floating field emitter, PFFE" has been proposed. The PFFE was combined the n-type cone-shaped triode field emitter with Si p-n photodiode area. The device was fabricated on a thinned silicon substrate to irradiate from the backside. A p-n photodiode was constructed in a field emitter, and the n+ region was separated by p+ regions to detect two- dimensional light distributions. The quantum efficiency reached to 70%. The efficiency will increase to provide non refractive film on the surface.
An infrared light sensor based on principle of a field emission from Pb(Zr,Ti)O3 (PZT) thin plate has been studied. The sensitivity is able to be improved to perform a surface polish, and the emission efficiency of polished emission plane increased to twice than that of the unpolished emission plane. On a low infrared light irradiation condition, a noise level of emission current was very large. To use a Micro-Channel-Plate (MCP) device, the amplification of the emission electrons was carried out. The emission electrons could be multiplied 40 times, the emission electron was clearly observed under low irradiation conditions. The electron emission type infrared light sensor is also useful to detect an infrared light on low irradiation condition.
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Report
(4 results)
Research Products
(59 results)
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[Journal Article] Fabrication of Si field emitter array in local vacuum Package2004
Author(s)
Daiji Noda, Masanori Hatakeyama, Masanori Kyogoku, Kimiya Ikushima, Kazuaki Sawada, Makoto Ishida
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Journal Title
17th International Vacuum Nanoelectronics Conference, Ray and Maria Stata Center, Massachusetts Institute of Technology, Cambridge, MA, USA, 11-16 July
Pages: 292-293
Description
「研究成果報告書概要(欧文)」より
Related Report
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