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Infrared Semiconductor Laser by Subband Transition at 3μmwavelength Band

Research Project

Project/Area Number 15360196
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionOsaka Electro-Communication University

Principal Investigator

SUSAKI Wataru  Osaka Electro-Communication University, Faculty of Engineering, Professor, 工学部, 教授 (00268294)

Co-Investigator(Kenkyū-buntansha) MATSUURA Hideharu  Osaka Electro-Communication University, Faculty of Engineering, Professor, 工学部, 教授 (60278588)
OHNO Nobuhito  Osaka Electro-Communication University, Faculty of Engineering, Professor, 工学部, 教授 (20194251)
TOMIOKA Akihiro  Osaka Electro-Communication University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (10211400)
Project Period (FY) 2003 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥15,000,000 (Direct Cost: ¥15,000,000)
Fiscal Year 2005: ¥2,600,000 (Direct Cost: ¥2,600,000)
Fiscal Year 2004: ¥5,700,000 (Direct Cost: ¥5,700,000)
Fiscal Year 2003: ¥6,700,000 (Direct Cost: ¥6,700,000)
KeywordsSuper lattice laser / Miniband Transition / AlInAs / InGaAs super lattice / AlGaAsSb barrier layer / MBE / InP substrate / Cascade laser / Infrared / ミニバンド間遷移
Research Abstract

Lasing wavelength in semiconductor lasers between 2.5 and 4μm at room temperature has not been achieved yet so far. We have proposed a novel structure of a quantum cascade laser (QCL) to get the wavelengths. The structure is based on the AlInAs/GaInAs superlattice lattice matched to the InP substrate. Some of the AlInAs layers in the active quantum well layers are replaced by AlAsb and AlAs layers, with the conduction band offsets to the GaInAs well are 1.60 and 1.06eV, respectively, which is substantially larger than that of AlInAs, 0.52eV. These higher barriers prevent the electron overflow in the active quantum wells and enable it to attain the shorter lasing wavelength. We have also proposed a injectorless QCL to reduce the number of quantum well layers and improve the quantum efficiency for the 3μm wavelength band.
Layer structures are designed by a numerical computer simulation developed for the structure. For example, two AlAsSb barriers and one AlAs barrier in the 4 quantum wells for the active layers is designed and have been indicated to be able to get the lasing wavelength less than 3μm. A injectorless structure at 3.2μm aimed for detection of CH_4 has also been designed.
The growth conditions of AlInAs, GaInAs, AlAsSb lattice-matched to InP at same substrate temperature are investigated by adjusting the metal source flux from cells by precisely controlled cell heater temperature. The cell for Sb is a cracking type to get Sb_2 in spite of Sb_4, to improve the crystal quality. The lattice match condition has been measured by XRD. It is confirmed by the photoluminescence that the AlAsSb layer crystal quality has been remarkably improved with Sb_2 source.
Layer structure of the conventional AlInAs/GaInAs cascade structure at 5.4μm and AlAsSb/GaInAs cascade structure at 3.2μm grown by MBE, and confirmed the thickness of each layer is precisely controlled within a monolayer by TEM observation.

Report

(4 results)
  • 2005 Annual Research Report   Final Research Report Summary
  • 2004 Annual Research Report
  • 2003 Annual Research Report
  • Research Products

    (40 results)

All 2006 2005 2004 2003 Other

All Journal Article (35 results) Publications (5 results)

  • [Journal Article] Carrier lifetime in compressively strained InGaAs quantum well lasers with InGaAsP barrier/waveguide layers grown on GaAs2006

    • Author(s)
      W.Susaki, S.Ukawa, M.Tanaka
    • Journal Title

      physica stat.(c) 3

      Pages: 683-687

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] GaAs基板InGaAs圧縮歪量子井戸レーザのキャリヤ再結合寿命2006

    • Author(s)
      田中将士, 須崎渉
    • Journal Title

      第53回応用物理学関係連合講演会講演予稿集

      Pages: 1224-1224

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Spontaneous Recombination Lifetime in Complessively Strained InGaAs Quantum Well Lasers with InGaAsP and GaAs Barrier/Waveguide Layers2005

    • Author(s)
      M.Tanaka, W.Susaki
    • Journal Title

      Ext. Abs. 24^<th> Electronic Materials Symposium

      Pages: 213-216

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] GaAs基板InGaAs圧縮歪量子井戸レーザのキャリヤ再結合寿命2005

    • Author(s)
      田中将士, 須崎 渉
    • Journal Title

      平成17年電気関係学会関西支部連合大会講演論文集

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] 3μm帯Injectorless Quantum-Cascade Laserの設計2005

    • Author(s)
      釣田隆弘, 田中将士, 須崎 渉
    • Journal Title

      平成17年電気関係学会関西支部連合大会講演論文集

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] AlInAs/GaInAs/AlAsSb 超格子カスケードレーザ構造の設計2005

    • Author(s)
      吉見哲生, 田中将士, 釣田隆弘, 須崎渉
    • Journal Title

      平成17年電気関係学会関西支部連合大会講演論文集

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] 自己励起ラマン散乱法によるサブバンド準位の解析2005

    • Author(s)
      角田慎一, 釣田隆弘, 宇川聡一郎, 須崎 渉
    • Journal Title

      平成17年電気関係学会関西支部連合大会講演論文集

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Spontaneous Recombination Lifetime in Complessively Strained InGaAs Quantum Well Lasers with InGaAsP and GaAs Barrier/Waveguide Layers2005

    • Author(s)
      M.Tanaka, W.Susaki
    • Journal Title

      Ext.Abs.24th Electronic Materials Symposium

      Pages: 213-216

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Carrier lifetime in compressively strained InGaAs quantum well lasers with InGaAsP barrier/waveguide layers grown on GaAs2005

    • Author(s)
      Wataru Susaki, Soichiro Ukawa, Masashi Tanaka
    • Journal Title

      Extended Abst.t of 32^<nd> International Symposium on Compound Semiconductors, WeP17, Rust, German September, 2005. (to be published in Physica solidus state (a))

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Spontaneous Recombination lifetime in Compressively Strained InGaAs Quantum Well Lasers with InGaAsP and GaAs Barrier/Waveguide Layers2005

    • Author(s)
      Masashi Tanaka, Wataru Susaki
    • Journal Title

      Proc.EXTENDED ABSTRACTS OF THE 24th ELECTRONIC MATERIALS SYMPOSIUM (Matsuyama)

      Pages: 213-216

    • Related Report
      2005 Annual Research Report
  • [Journal Article] 3μm帯Injectorless Quantum-Cascade Laserの設計2005

    • Author(s)
      釣田隆弘, 田中将士, 須崎渉
    • Journal Title

      平成17年電気関係学会関西支部連合大会講演予稿集

    • Related Report
      2005 Annual Research Report
  • [Journal Article] AlInAs/GaInAs/AlAsSb 超格子カスケードレーザ構造の設計2005

    • Author(s)
      吉見哲生, 田中将士, 釣田隆弘, 須崎渉
    • Journal Title

      平成17年電気関係学会関西支部連合大会講演予稿集

    • Related Report
      2005 Annual Research Report
  • [Journal Article] GaAs基板InGaAs圧縮歪量子井戸レーザーのキャリヤ再結合寿命2005

    • Author(s)
      田中将士, 須崎渉
    • Journal Title

      平成17年電気関係学会関西支部連合大会講演予稿集

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Determination of subband levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering2004

    • Author(s)
      Wataru Susaki, Soichiro Ukawa, Satoshi Yokota, Nobuhito Ohno
    • Journal Title

      Physica E 21

      Pages: 793-797

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Spontaneous Recombination Lifetime in complessively Strained InGaAs and InGaP quantum well lasers grown on GaAs substrates2004

    • Author(s)
      W.Susaki, T.Ohashi, S.Yuri
    • Journal Title

      Proc. 31st International Symposium on Compound Semiconductors

      Pages: 95-99

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Dependence of Band-Offset on Sb Content in AlGaAs/GaAsSb Quantum Wells Grown on GaAs by MBE2004

    • Author(s)
      K.Hayakawa, T.Natsuhara, Xiang Gao, T.Uetsuji, W.Susaki
    • Journal Title

      Proc. 31st International Stymposium on Compound Semiconductors

      Pages: 9-12

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Band-Offset Energy Dependence on Sb Content in AlGaAs/GaAsSb Quantum Wells Grown on GaAs by MBE2004

    • Author(s)
      W.Susaki, K.Hayakawa, Xiang Gao, T.Natsuhara, T.Uetsuji
    • Journal Title

      Proc. 2004 International Conference on Molecular Beam Epitaxy

      Pages: 27-28

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Determination of subband levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering at 300K2004

    • Author(s)
      W.Susaki, S.Ukawa, N.Ohno
    • Journal Title

      Prooc. Sino-Japan Joint Meeting on Optical Science and Electromagnetic Theory(OFSET)

      Pages: 210-213

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] サブバンド間遷移による超格子カスケードレーザの設計〔1〕2004

    • Author(s)
      百合誠志, 釣田隆弘, 須崎 渉
    • Journal Title

      平成16年度電気関係学会関西支部連合大会講演論文集

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] サブバンド間遷移による超格子カスケードレーザの設計〔2〕2004

    • Author(s)
      釣田隆弘, 百合誠志, 須崎 渉
    • Journal Title

      平成16年度電気関係学会関西支部連合大会講演論文集

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Spontaneous recombination Lifetime in complessively Strained InGaAs and InGaP quantum well lasers grown on GaAs substrates2004

    • Author(s)
      W.Susaki, T.Ohashi, S.Yuri
    • Journal Title

      Proc.31^<st> International Symposium on Compound Semiconductors

      Pages: 95-99

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Dependence of Band-Offset on Sb Content in AlGaAs/GaAsSb Quantum Wells Grown on GaAs by MBE2004

    • Author(s)
      K.Hayakawa, T.Natsuhara, Xiang Gao, T.Uetsuji, W.Susaki
    • Journal Title

      Proc.31^<st> International Symposium on Compound Semiconductors

      Pages: 9-12

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Band-Offset Energy Dependence on Sb Content in AlGaAs/GaAsSb Quantum Wells Grown on GaAs by MBE2004

    • Author(s)
      W.Susaki, K.Hayakawa, Xiang Gao, T.Natsuhara, T.Uetsuji
    • Journal Title

      Proc.2004 International Conference on Molecular Beam Epitaxy

      Pages: 27-28

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Determination of subband levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering at 300K2004

    • Author(s)
      W.Susaki, S.Ukawa, N.Ohno
    • Journal Title

      Proc.Sino-Japan Joint Meeting on Optical Science and Electromagnetic Theory (OFSET)

      Pages: 210-213

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Dependence of Band-Offset on Sb content in AlGaAs/GaAsSb Quantum Wells Grown on GaAs by MBE2004

    • Author(s)
      K.Hayakawa, et al.
    • Journal Title

      Estended Abstracts of 31st International Symposium on Compound Semiconductors

      Pages: 170-171

    • Related Report
      2004 Annual Research Report
  • [Journal Article] サブバンド間遷移による超格子カスケードレーザの設計〔1〕2004

    • Author(s)
      百合, 他
    • Journal Title

      平成16年度電気関係学会関西支部連合大会講演論文集

    • Related Report
      2004 Annual Research Report
  • [Journal Article] サブバンド間遷移による超格子カスケードレーザの設計〔2〕2004

    • Author(s)
      釣田, 他
    • Journal Title

      平成16年度電気関係学会関西支部連合大会講演論文集

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering2003

    • Author(s)
      W.Susaki, S.Ukawa, N.Ohno, H.Takeuchi, Y.Yamamoto, R.Hattori, A.Shima, Y.Mihashi
    • Journal Title

      Ext.Abst. 2003 International Symposium on Compound Semiconductors

      Pages: 157-158

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Determination of subband levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering2003

    • Author(s)
      W.Susaki, S.Ukawa, N.Ohno, H.Takeuchi, Y.Yamamoto, R.Hattori, A.Shima, Y.Mihashi
    • Journal Title

      Ext. Abs. 22nd Electronic Materials Symposium

      Pages: 253-256

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Fabrication of the InGaAsSb/AlGaAs/AlGaAsSb quantum well for the 2μm wavelength lasers by MBE2003

    • Author(s)
      K.Hamahara, Xiang.Gao, M.Segawa, W.Susaki
    • Journal Title

      Ext. Abs. 22nd Electronic Materials Symposium

      Pages: 133-134

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] MBE fabrication of quantum well for 1.3μm GaAsSb/AlGaAs laser on GaAs by substrate temperature control2003

    • Author(s)
      K.Hayakawa, T.Uetsuji, Xiang Gao, W.Susaki
    • Journal Title

      Ext.Abs. 22nd Electronic Materials Symposium

      Pages: 135-136

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering2003

    • Author(s)
      W.Susaki, S.Ukawa, N.Ohno, H.Takeuchi, Y.Yamamoto, R.Hattori, A.Shima, Y.Mihashi
    • Journal Title

      Ext.Abst.2003 International Symposium on Compound Semiconductors

      Pages: 157-158

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Determination of subband levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering2003

    • Author(s)
      W.Susaki, S.Ukawa, N.Ohno, H.Takeuchi, Y.Yamamoto, R.Hattori, A.Shima, Y.Mihashi
    • Journal Title

      Ext.Abs.22nd Electronic Materials Symposium

      Pages: 253-256

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Fabrication of the InGaAsSb/AlGaAs/AlGaAsSb quantum well for the 2μm wavelength lasers by MBE2003

    • Author(s)
      K.Hamahara, Xiang Gao, M.Segawa, W.Susaki
    • Journal Title

      Ext.Abs.22nd Electronic Materials Symposium

      Pages: 133-134

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] MBE fabrication of quantum well for 1.3μm GaAsSb/AlGaAs laser on GaAs by substrate temperature control2003

    • Author(s)
      K.Hayakawa, T.Uetsuji, Xiang Gao, W.Susaki
    • Journal Title

      Ext.Abs.22nd Electronic Materials Symposium

      Pages: 135-136

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Publications] W.Susaki, N.Ohno, et al.: "Determination of subband levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering"Physica E. 21. 793-797 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] W.Susaki, N.Ohno, et al.: "Determination of subband levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering at 300K"Prooc.OFSET. 210-213 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] W.Susaki, N.Ohno, et al.: "Determination of subband levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering"Ext.Abs.International Symposium on Compound Semiconductors. IEEE Catalog No.03TH8675. 157-158 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] K.Hamahara, W.Susaki, et al.: "Fabrication of the InGaAsSb/AlGaAs/AlGaAsSb quantum well for the 2μm wavelength lasers by MBE"Ext.Abs. 22^<nd> Electronic Materials Symposium. 133-134 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] K.Hayakawa, W.Susaki, et al.: "MBE fabrication of quantum well for 1.3μm GaAsSb/AlGaAs laser on GaAs by substrate temperature control"Ext.Abs.22^<nd> Electronic Materials Symposium. 135-136 (2003)

    • Related Report
      2003 Annual Research Report

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Published: 2003-04-01   Modified: 2016-04-21  

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