• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Chemical interaction in gaseous phase of MOCVD raw materials and self-assembled ferroelectric thin films

Research Project

Project/Area Number 15360339
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Inorganic materials/Physical properties
Research InstitutionTokyo Institute of Technology

Principal Investigator

SHINOZAKI Kazuo  Tokyo Institute of Technology, Dept.Metallurgy and Ceramic Science, Associate Professor, 大学院・理工学研究科, 助教授 (00196388)

Co-Investigator(Kenkyū-buntansha) KIGUCHI Takanori  Tokyo Institute of Technology, Center for Advanced Material Analysis, Research Associate, 総合分析支援センター, 助手 (70311660)
WAKIYA Naoki  Tokyo Institute of Technology, Dept.Metallurgy and Ceramic Science, Research Associate, 大学院・理工学研究科, 助手 (40251623)
MIZUTANI Nobuyasu  Tokyo Institute of Technology, Dept.Metallurgy and Ceramic Science, Emeritus Professor, 大学院・理工学研究科, 教授 (60016558)
Project Period (FY) 2003 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥15,500,000 (Direct Cost: ¥15,500,000)
Fiscal Year 2005: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2004: ¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2003: ¥12,800,000 (Direct Cost: ¥12,800,000)
KeywordsMOCVD / vapor phase deposition / vapor phase reaction / FTIR / Metal-organic raw material / microstructure / residual carbon / trap
Research Abstract

MOCVD process has a problem that the metalorganic raw materials react with each other in the chamber and tubing, moreover the raw material deposits on the substrate with complex reaction. This study aimed to clarify the deposition mechanism of the oxide thin film in the MOCVD method using oxide ferroelectric thin film as a model material. In addition, the appropriate buffer layers by PLD for depositing the epitaxial ferroelectric thin film on Si substrate by MOCVD were examined by TEM.
In-situ FTIR mechanism was introduced into cold-wall type MOCVD chamber. Decomposition in gaseous phase and deposition mechanism of TiO_2 on the substrate of Ti(O-i-C_3H_7)_4 (TTIP) was examined. TiO_2 thin films were varied as composition, crystallinity and microstructures with substrate temperature. At low temperature (300℃), the microstructure of the thin film was rough compared with the thin film deposited on higher temperature. This was caused by the residual C-H fragments in the substrate, that was … More detected by the FTIR spectrum. As the decomposition rate of the raw MO source depends on the ambient temperature, the decomposition was not complete even at 600℃ in case of TTIP. Decomposed and insufficiently decomposed raw material is reached on the substrate, substrate surface acts as catalyst and oxidation are enhanced.
Pb(DPM)_2 for a Pb source and TTIP for a Ti were used for deposition of PbTiO_3 on MgO substrate. When the nominal composition of the initial gas was Pb/Ti= 1 or higher, the obtained thin film showed stoichiometric PbTiO_3. The excess Pb was evaporated. Heating of Pb(DPM)_2 and TTIP in same chamber showed the extinction of the absorbance at 1600cm^<-1> peak and produce the new peak at 1260cm^<-1> in Pb(DPM)_2. This indicates the existence of intermediate compounds with Pb-O-C-Ti bond.
Pulsed source MOCVD method was applied to make PZT thin film with 4 different sour supply methods. There were optimum conditions by controlling the pulse width for both PZT/MgO and PZT/Pt/Ti/Si. Alternate supply of PbTiO_3 and PbZrO_3 with Ar produced most smooth surface. Less

Report

(4 results)
  • 2005 Annual Research Report   Final Research Report Summary
  • 2004 Annual Research Report
  • 2003 Annual Research Report
  • Research Products

    (18 results)

All 2006 2005 2004 2003 Other

All Journal Article (15 results) Publications (3 results)

  • [Journal Article] Investigation of domain structure and electrical properties of monoclinic epitaxial zirconia buffer layer2006

    • Author(s)
      Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani
    • Journal Title

      Key Engineerig Materials 301

      Pages: 261-264

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Stress Control and Ferroelectric Properties of Lead Zirconate Titanate (PZT) Thin Film on Si Substrate with Buffer Layers2005

    • Author(s)
      Keisuke Fujito, Naoki Wakiya, Nobuyasu Mizutani, Kazuo Shinozaki
    • Journal Title

      Jpn. J. Appl. Phys. 44 [9B]

      Pages: 6900-6904

    • NAID

      130004534722

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Stress Control and Ferroelectric Properties of Lead Ziroconate Titanate (PZT) Thin Film on Si Substrate with Buffer Layers2005

    • Author(s)
      Keisuke Fujito, Naoki Wakiya, Nobuyasu Mizutani, Kazuo Shinozaki
    • Journal Title

      Jpn.J.Appl.Phys. 44[9B]

      Pages: 6900-6904

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Stress Control and Ferroelectric Properties of Lead Zirconate Titanate (PZT) Thin Film on Si Substrate with Buffer Layers2005

    • Author(s)
      Keisuke Fujito, Naoki Wakiya, Nobuyasu Mizutani, Kazuo Shinozaki
    • Journal Title

      Jpn.J.Appl.Phys. 44

      Pages: 6900-6904

    • NAID

      130004534722

    • Related Report
      2005 Annual Research Report
  • [Journal Article] In-situ TEM Investigation of Structural Changes in Zirconia/Silicon Heterostructures2004

    • Author(s)
      Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani
    • Journal Title

      International Journal of Nanoscience 3[6]

      Pages: 699-705

    • NAID

      130004610113

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Characterization of defect type and dislocation density in double oxide heteroepitaxial CeO2/YSZ/Si(001) films2003

    • Author(s)
      C.H.Chen, T.Kiguchi, A.Saiki, N.Wakiya, K.Shinozaki, N.Mizutani
    • Journal Title

      Applied physics A 76

      Pages: 969-973

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Effect of Source Supply Method on Microstructure Development in PZT Thin Films by Pulsed Metalorganic Chemical Vapor Deposition2003

    • Author(s)
      K.Fujito, N.Wakiya, K.Shinozaki, N.Mizutani
    • Journal Title

      Key Engineering Materials 248

      Pages: 53-56

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Preparation and Semiconducting Properties of Nb-Doped-SrTiO3 Thin films having Controlled Crystal Orientation By MOCVD2003

    • Author(s)
      A.Nagato, N.Wakiya, K Shinozaki, N.Mizutani
    • Journal Title

      Key Engineering Materials 248

      Pages: 111-114

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/RuO_2 Thin Films by MOCVD2003

    • Author(s)
      K.Shinozaki, A.Iwasaki, N.Wakiya, N.Mizutani
    • Journal Title

      Mat. Res. Soc. Symp. Proc. 768

      Pages: 63-68

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Characterization of defect type and dislocation density in double oxide heteroepitaxial CeO2/YSZ/Si(001) films2003

    • Author(s)
      C.H.Chen, T.Kiguchi, A.Saiki, N.Wakiya, K.Shinozaki, N.Mizutani
    • Journal Title

      Applied Physics A 76

      Pages: 969-973

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Effect of Source Supply Method on Microstructure Development in PZT Thin Films by Pulsed Metalorganic Chemical Vapor Deposition2003

    • Author(s)
      K.Fujito, N.Wakiya, K.Shinoxaki, N.Mizutani
    • Journal Title

      Key Engineering Materials 248

      Pages: 53-56

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Preparation and Semiconducting Properties of Nb-Doped-SrTiO3 Thin Films having Controlled Crystal Orientation By MOCVD2003

    • Author(s)
      A.Nagato, N.Wakiya, K.Shinozaki, N.Mizutani
    • Journal Title

      Key Engineering Materials 248

      Pages: 111-114

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/RuO2 Thin Films by MOCVD2003

    • Author(s)
      K.Shinozaki, A.Iwasaki, N.Wakiya, N.Mizutani
    • Journal Title

      Mat.Res.Soc.Symp.Proc. 768

      Pages: 63-68

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary 2004 Annual Research Report
  • [Journal Article] HRTEM investigation of the 90° domain structure and ferroelectric properties of multi-layered PZT thin films2003

    • Author(s)
      T.Kiguchi, N.Wakiya, K.Shinozaki, N.Mizutani
    • Journal Title

      Microelectronic Engineering 66

      Pages: 708-712

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Effective Buffer Structures and Dielectric Properties of Epitaxial Pb(Mg_<1/3>Nb_<2/3>)O_3 Thin Films on Si Substrates2003

    • Author(s)
      T.Yamada, N.Wakiya, K.Shinozaki, N.Mizutani, M.Kondo, K.Kurihara
    • Journal Title

      Key Engineering Materials 248

      Pages: 65-68

    • Related Report
      2004 Annual Research Report
  • [Publications] K.Fujito, N.Wakita, K.Shinozaki, N.Mizutani: "Effect of source supply method on microstructure development in PZT thin films by pulsed metalorganic chemical vapor deposition"Key Engineering Materials. 248. 53-56 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T-W Chiu, N.Wakiya, K.Shinozaki, N.Mizutani: "Growth of highly (001)-textured strontium barium niobate thin films on epitaxial LaNiO_3/CeO_2/YSZ/Si(100)"Thin Solid Films. 426. 62-67 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] D.Bao, X.Yao, K.Shinozaki, N.Mizutani: "Growth and electrical properties of Pb(Zr, Ti)O_3 thin flms by a chemical solution deposition method using zirconyl heptanoate as zirconium source"J.Cryst.Growth. 259. 352-357 (2003)

    • Related Report
      2003 Annual Research Report

URL: 

Published: 2003-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi