| Project/Area Number |
15360342
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | TOKYO INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
FUNAKUBO Hiroshi Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Associate Professor, 大学院・総合理工学研究科, 助教授 (90219080)
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| Co-Investigator(Kenkyū-buntansha) |
MIZUTANI Nobuyasu Tokyo Institute of Technology, Interdisciplinary Graduate School of Engineering, Professor, 大学院・理工学研究科, 教授 (60016558)
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| Project Period (FY) |
2003 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥11,600,000 (Direct Cost: ¥11,600,000)
Fiscal Year 2004: ¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2003: ¥7,900,000 (Direct Cost: ¥7,900,000)
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| Keywords | Nanostructure / Layer perovskite ferroelectric thin films / High density memory / Epitaxial films / エピタキシャル成長 / 層状強誘電体 / ドメイン / プローブ |
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| Research Abstract |
Layer perovskite materials consist of the stack structure of insulator and the ferroelectric perovskite with nanosize thickness along c-axis. We can make a/b-axes-oriented films along surface normal direction. It can be consider as a track structure of ferroelectric perovskite separated by nanowidth insulator. This structure is useful for the high density memory strage media up to 10 Tbit/inch^2. In this research we tried to the basic research for realizing this high density storage media.
As results, we obtained the following results.
1)(100)/(010) oriented SrBi_2Ta_2O_9,Bi_4Ti_3O_<12> and Sr_4Bi_3Ti_4O_<15> were epitaxially grown on the substrates. This data suggests that the various width ferroelectric tracks were successfully prepared.
2)We successfully prepared various orientation Bi_4Ti_3O_<12> films keeping in-plane-c-axis orientation, such as (100)/(010),(110), and (230)/(320) by controlling the mismatch between the film and the substrates.
3)By using intercalation technique, insulating bismuth oxide layers can be replaced by the proton. This suggests the expansion of this technique not only high density memory media but also other field including quantum effects devices.
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