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Development of highly-sensitive ultraviolet sensing method using diamond

Research Project

Project/Area Number 15360376
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Structural/Functional materials
Research InstitutionNational Institute for Materials Science (NIMS)

Principal Investigator

KOIDE Yasuo  National Institute for Materials Science (NIMS), Advanced Materials Laboratory, Senior Researcher, 物質研究所, 主席研究員 (70195650)

Co-Investigator(Kenkyū-buntansha) KANDA Hisao  National Institute for Materials Science (NIMS), Advanced Materials Laboratory, Director, 物質研究所, ディレクター (30343841)
WATANABE Kenji  National Institute for Materials Science (NIMS), Advanced Materials Laboratory, Senior Researcher, 物質研究所, 主任研究員 (20343840)
KOIZUMI Satoshi  National Institute for Materials Science (NIMS), Advanced Materials Laboratory, Senior Researcher, 物質研究所, 主幹研究員 (90215153)
メイヨン リョオ  独立行政法人物質・材料研究機構, 物質研究所, 特別研究員
アルバレッツ ホセ  独立行政法人物質・材料研究機構, 物質研究所, 特別研究員
LIAO Meiyong  National Institute for Materials Science (NIMS), Advanced Materials Laboratory, NIMS Postdoctoral Fellow
ALVAREZ Jose  National Institute for Materials Science (NIMS), Advanced Materials Laboratory, NIMS Postdoctoral Fellow
寥 梅勇  独立行政法人物質・材料研究機構, 物質研究所, 特別研究員
ホセ アルバレッツ  独立行政法人物質・材料研究機構, 物質研究所, 特別研究員
Project Period (FY) 2003 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥15,200,000 (Direct Cost: ¥15,200,000)
Fiscal Year 2005: ¥4,400,000 (Direct Cost: ¥4,400,000)
Fiscal Year 2004: ¥5,200,000 (Direct Cost: ¥5,200,000)
Fiscal Year 2003: ¥5,600,000 (Direct Cost: ¥5,600,000)
KeywordsDiamond / Ultraviolet sensor / photoconductivity / UV / visible blind ratio / Schottky contact / carbide / metallic nitride / MSM構造 / ショットキー接合 / ヘテロ接合 / p型およびn型 / pn接合 / ディープドーパント
Research Abstract

The purpose of this project is to develop a highly-sensitive ultraviolet light sensing method using diamond semiconductor as deep-UV (DUV) photodetector with response energy larger than 4.4 eV. For this purpose, Schottky photodiode and metal-semiconductor-metal (MSM) diode were fabricated. We developed thermally stable, highly sensitive Schottky-type photodiode for the first time by using thermally stable transition metal carbide and nitride Schottky contacts. The results obtained for three years are as follows.
(1)The Schottky photodiode with the transition metal carbide, WC, Schottky contact and annealed Ti/WC Ohmic contact was developed. The discrimination ratio between the DUV (220 nm) and visible light (630 nm) was as large as 10^6. The photoresponse properties of the photodiode was almost unchanged after thermal annealing up to 550 C for 3 h.
(2)The Schottky photodiode with the transition metal nitride, HfN, Schottky contact and annealed Ti/WC Ohmic contact was developed. This photodiode showed the high speed response time shorter than 0.3 s and the discrimination ratio between the DUV and visible light of 10^6 and simultaneously revealed the thermal stability up to 500 C.
(3)In order to apply the diamond sensor to the flame sensor, fully-packaged and bonded photodiode devices were fabricated. In corroboration with ANTEC Co.,the flame detection/alarm system using the diamond DUV sensor was demonstrated for the first time.

Report

(4 results)
  • 2005 Annual Research Report   Final Research Report Summary
  • 2004 Annual Research Report
  • 2003 Annual Research Report
  • Research Products

    (69 results)

All 2006 2005 2004 2003 Other

All Journal Article (52 results) Patent(Industrial Property Rights) (16 results) Publications (1 results)

  • [Journal Article] Crystallographic and electrical characterization of tungsten carbide thin films for Schottky contact of diamond photodiode2006

    • Author(s)
      M.Y.Liao, Y.Koide, J.Alvarez
    • Journal Title

      J. Vac. Sci. & Tech. B Vol.24, No.1

      Pages: 185-189

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Photovoltaic Schottky ultraviolet detector fabricated on boron-doped homoepitxial diamond layer2006

    • Author(s)
      M.Y.Liao, Y.Koide, J.Alvarez
    • Journal Title

      Appl. Phys. Lett. Vol.88

      Pages: 335041-335043

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Crystallographic and electrical characterization of tungsten carbide thin films for Schottky contact of diamond photodiode2006

    • Author(s)
      M.Y.Liao, Y.Koide, J.Alvarez
    • Journal Title

      J.Vac.Sci. & Tech.B 24(1)

      Pages: 185-189

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Photovoltaic Schottky ultraviolet detector fabricated on boron-doped homoepitxial diamond layer.2006

    • Author(s)
      M.Y.Liao, Y.Koide, J.Alvarez
    • Journal Title

      Appl.Phys.Lett. vol.88

      Pages: 335041-335043

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Crystallographic and electrical characterization of tungsten carbide thin films for Schottky contact of diamond photodiode.2006

    • Author(s)
      M.Y.Liao, J.Alvarez, Y.Koide
    • Journal Title

      J.Vac.Sci.& Techono.B 24

      Pages: 185-189

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Photovoltaic Schottky ultraviolet detector fabricated on boron-doped homoepitaxial diamond layer.2006

    • Author(s)
      M.Y.Liao, J.Alvarez, Y.Koide
    • Journal Title

      Appl.Phys.Lett. 88

      Pages: 335041-335043

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Enhancement of door ionization in phosphorus-doped n-diamond2005

    • Author(s)
      Y.Koide
    • Journal Title

      Appl. Surf.Sci. 244

      Pages: 26-29

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Admittance spectroscopy for phosphorus-doped n-type diamond epilayer2005

    • Author(s)
      Y.Koide, S.Koizumi, H.Kanda, M.Suzuki, H.Yoshida, N.Sakuma, T.Ono, T.Sakai
    • Journal Title

      Appl. Phys. Lett. Vol.86, June 6

      Pages: 2321051-2321053

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Thermally-Stable visible-blind Diamond Photodiode Using WC Schottky Contact2005

    • Author(s)
      M.Y.Liao, Y.Koide, J.Alvarez
    • Journal Title

      Appl. Phys. Lett. 87, July 4

      Pages: 221051-221053

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond2005

    • Author(s)
      J.Alvarez, M.Y.Liao, Y.Koide
    • Journal Title

      Appl. Phys. Lett. 87, Sept.12

      Pages: 1135071-1135073

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor2005

    • Author(s)
      Y.Koide, M.Y.Liao, J.Alvarez
    • Journal Title

      Materials Transactions JIM Vol.46, No.09

      Pages: 1965-1968

    • NAID

      130004452876

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Thermal Stability of Diamond Photodiodes Using WC as Schottky Contact2005

    • Author(s)
      M.Y.Liao, Y.Koide, J.Alvarez
    • Journal Title

      Jpn. J. Appl. Phys. Vol.44, No.11

      Pages: 7832-7838

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Admittance spectroscopy of a phosphorus-doped n-diamond homoepitaxial layer2005

    • Author(s)
      Y.Koide, S.Koizumi, H.Kanda, M.Suzuki, H.Yoshida, N.Sakuma, T.Ono, T.Sakai
    • Journal Title

      Diamond Relat. Mater. Vol.14, No.11-12

      Pages: 2011-2014

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Special issue on narrow and wide-bandgap semiconductor materials - Preface.2005

    • Author(s)
      Y.Koide, M.Murakami
    • Journal Title

      Materials Transactions JIM Vol.46, No.9

      Pages: 1957-1957

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Simulation of Band Diagram for CVD Diamond Surface Conductivity2005

    • Author(s)
      S.Kono, Y.Koide
    • Journal Title

      Jpn. J. Appl. Phys. Vol.44, No.12

      Pages: 8378-8382

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Tungsten carbide Schottky contact to diamond for thermally stable photodiode2005

    • Author(s)
      M.Y.Liao, Y.Koide, J.Alvarez
    • Journal Title

      Diamond Relat. Mater. Vol.14, No.11-12

      Pages: 2003-2006

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Theoretical analysis of electron statistics for n-type diamond2005

    • Author(s)
      Y.Koide
    • Journal Title

      Material Science Forum vol.475-479

      Pages: 1719-1724

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Analysis for Electron Concentrations in n-Diamond/III-Nitride Heterostructure and Phosphorus delta-Doped Structure in Diamond2005

    • Author(s)
      Y.Koide
    • Journal Title

      Jpn.J.Appl.Phys. vol.44,No.1A

      Pages: 55-59

    • NAID

      130004533133

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Enhancement of donor ionization in phosphorus-doped n-diamond2005

    • Author(s)
      Y.Koide
    • Journal Title

      Appl.Surf Sci. 244

      Pages: 26-29

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Admittance spectroscopy for phosphorus-doped n-type diamond epilayer2005

    • Author(s)
      Y.Koide, S.Koizumi, H.Kanda, M.Suzuki, H.Yoshida, N.Sakuma, T.Ono, T.Sakai
    • Journal Title

      Appl.Phys.Lett. 86,June 6

      Pages: 2321051-2321053

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Thermally-Stable visible-blind Diamond Photodiode Using WC Schottky Contact2005

    • Author(s)
      M.Y.Liao, Y.Koide, J.Alvarez
    • Journal Title

      Appl.Phys.Lett. 87, July 4

      Pages: 221051-221053

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond2005

    • Author(s)
      J.Alvarez, M.Y.Liao, Y.Koide
    • Journal Title

      Appl.Phys.Lett. 87,Sept.12

      Pages: 1135071-1135073

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor2005

    • Author(s)
      Y.Koide, M.Y.Liao, J.Alvarez
    • Journal Title

      Materials Transactions JIM vol.46,No.09

      Pages: 1965-1968

    • NAID

      130004452876

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Thermal Stability of Diamond Photodiodes Using WC as Schottky Contact.2005

    • Author(s)
      M.Y.Liao, Y.Koide, J.Alvarez
    • Journal Title

      Jpn.J.Appl.Phys. vol.44,No.11

      Pages: 7832-7838

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Admittance spectroscopy of a phosphorus-doped n-diamond homoepitaxial layer2005

    • Author(s)
      Y.Koide, S.Koizumi, H.Kanda, M.Suzuki, H.Yoshida, N.Sakuma, T.Ono, T.Sakai
    • Journal Title

      Diamond Relat.Mater. vol.14,No.11-12

      Pages: 2011-2014

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Special issue on narrow and wide-bandgap semiconductor materials-Preface.2005

    • Author(s)
      Y.Koide, M.Murakami
    • Journal Title

      Materials Transactions JIM vol.46,No.9

      Pages: 1957-1957

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Simulation of Band Diagram for CVD Diamond Surface Conductivity2005

    • Author(s)
      S.Kono, Y.Koide
    • Journal Title

      Jpn.J.Appl.Phys. Vol.44,No.12

      Pages: 8378-8382

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Tungsten carbide Schottky contact to diamond for thermally stable photodiode2005

    • Author(s)
      M.Y.Liao, Y.Koide, J.Alvarez
    • Journal Title

      Diamond Relat.Mater. vol.14,No.11-12

      Pages: 2003-2006

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Theoretical analysis of electron statistics for n-type diamond.2005

    • Author(s)
      Y.Koide
    • Journal Title

      Materials Sci.Forum 475-479

      Pages: 1719-1724

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Analysis for electron concentration in n-diamond/III-nitride heterostructure and phosphorus delta-doped structure in diamond.2005

    • Author(s)
      Y.Koide
    • Journal Title

      Jpn.J.Appl.Phys. 44

      Pages: 55-59

    • NAID

      130004533133

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Enhancement of donor ionization in phosphorus doped n-type diamond epilayer.2005

    • Author(s)
      Y.Koide
    • Journal Title

      Appl.Surf.Sci. 244

      Pages: 26-29

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Admittance spectroscopy for phosphorus-doped n-type diamond epilayer.2005

    • Author(s)
      Y.Koide et al.
    • Journal Title

      Appl.Phys.Lett. 86

      Pages: 2321051-2321053

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Thermally-stable visible blind diamond photodioide using WC Schottky contact.2005

    • Author(s)
      M.Y.Liao, Y.Koide, J.Alvarez
    • Journal Title

      Appl.Phys.Lett. 87

      Pages: 221051-221053

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond.2005

    • Author(s)
      J.Alvarez, M.Y.Liao, Y.Koide
    • Journal Title

      Appl.Phys.Lett. 87

      Pages: 1135071-1135073

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Development of thermally stable solar-blind deep-ultraviolet diamond photosensor.2005

    • Author(s)
      Y.Koide, M.Y.Liao, J.Alvarez
    • Journal Title

      Materials Transactions JIM 46

      Pages: 1965-1968

    • NAID

      130004452876

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Thermally stability of diamond photodiodes using WC as Schottky contact.2005

    • Author(s)
      M.Y.Liao, J.Alvarez, Y.Koide
    • Journal Title

      Jpn.J Appl.Phys. 44

      Pages: 7832-7838

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Tungsten carbide Schottky contact to diamond for thermally stable photodiode.2005

    • Author(s)
      M.Y.Liao, J.Alvarez, Y.Koide
    • Journal Title

      Diamond Relat.Mater. 14

      Pages: 2004-2006

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Admittance spectroscopy of a phosphorus-doped n-diamond homoepitaxial layer.2005

    • Author(s)
      Y.Koide et al.
    • Journal Title

      Diamond Relat.Mater. 14

      Pages: 2011-2014

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Analysis for electron concentrations in n-Diamond/III-Nitride heterostructure and phosphorus delta-doped structure in diamond2005

    • Author(s)
      Y.Koide
    • Journal Title

      Jpn.J.Appl.Phys Vol.44No.1A

      Pages: 55-59

    • NAID

      130004533133

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Theoretical analysis of electron statistics for n-type diamond2005

    • Author(s)
      Y.Koide
    • Journal Title

      Material Science Forum 475-479

      Pages: 1719-1724

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Enhancement of donor ionization in phosphorus-doped n-diamond2005

    • Author(s)
      Y.Koide
    • Journal Title

      Applied Surface Science (In Press)

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Analysis of electron statistics including compensation and deep-dopant effects for phosphorus-doped n-type diamond2004

    • Author(s)
      Y.Koide
    • Journal Title

      Jpn. J. Appl. Phys. Vol.43, No.6A

      Pages: 3307-3310

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Depletion layer in pn-junction of diamond with phosphorus donor and boron acceptor2004

    • Author(s)
      Y.Koide
    • Journal Title

      Diamond Relat. Mater. Vol.13, No.11-12

      Pages: 1963-1966

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Theoretical analysis of electron statistics for n-type diamond2004

    • Author(s)
      Y.Koide
    • Journal Title

      Material Science Forum Vol.475-479

      Pages: 1719-1724

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Analysis for Electron Concentrations in n-Diamond/III-Nitride Heterostructure and Phosphorus delta-Doped Structure in Diamond2004

    • Author(s)
      Y.Koide
    • Journal Title

      Jpn. J. Appl. Phys. Vol.44, No.1A

      Pages: 55-59

    • NAID

      130004533133

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Analysis of electron statistics including compensation and deep-dopant effects for phosphorus-doped n-type diamond.2004

    • Author(s)
      Y.Koide
    • Journal Title

      Jpn.J.Appl.Phys. vol.43,No.6A

      Pages: 3307-3310

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Depletion layer in pn-junction of diamond with phosphorus donor and boron acceptor.2004

    • Author(s)
      Y.Koide
    • Journal Title

      Diamond Relat.Mater. vol.13,No.11-12

      Pages: 1963-1966

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Depletion layer in pn-junction of diamond with Phosphorus donor and boron acceptor2004

    • Author(s)
      Y.Koide
    • Journal Title

      Diamond Related Materials Vol.13No.11-12

      Pages: 1963-1966

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Peculiarity of depletion region in diamond pn-junction.2003

    • Author(s)
      Y.Koide
    • Journal Title

      Jpn. J. Appl. Phys. Vol.42, No.1

      Pages: 6800-6803

    • NAID

      10012563745

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Characteristics of depletion layer in diamond pn-junction2003

    • Author(s)
      Y.Koide
    • Journal Title

      Proceedings of the 2003 Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments August 21-24

      Pages: 281-284

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Peculiarity of depletion region in diamond pn-junction.2003

    • Author(s)
      Y.Koide
    • Journal Title

      Jpn.J.Appl.Phys. vol.42,No.1

      Pages: 6800-6803

    • NAID

      10012563745

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Characteristics of depletion layer in diamond pn-junction.2003

    • Author(s)
      Y.Koide
    • Journal Title

      Proceedings of the 2003 Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments, August 21-24, 2003, Gangneung, Korea

      Pages: 281-284

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Patent(Industrial Property Rights)] ダイヤモンド半導体整流素子2006

    • Inventor(s)
      Y. Koide, M. Liao, J. Alvarez
    • Industrial Property Rights Holder
      物資・材料研究機構
    • Filing Date
      2006-02-07
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Patent(Industrial Property Rights)] ダイヤモンド半導体整流素子2005

    • Inventor(s)
      小出康夫, リョウ メイヨン, ホセアルバレッツ
    • Industrial Property Rights Holder
      物資・材料研究機構
    • Industrial Property Number
      2005-038517
    • Filing Date
      2005-02-16
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Patent(Industrial Property Rights)] ダイヤモンド紫外光センサー2005

    • Inventor(s)
      小出康夫, リョウ メイヨン, ホセアルバレッツ
    • Industrial Property Rights Holder
      物資・材料研究機構
    • Filing Date
      2005-08-01
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Patent(Industrial Property Rights)] ダイヤモンド紫外光センサー2005

    • Inventor(s)
      小出康夫, リョウ メイヨン, ホセアルバレッツ
    • Industrial Property Rights Holder
      物資・材料研究機構
    • Industrial Property Number
      2005-247774
    • Filing Date
      2005-08-29
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Patent(Industrial Property Rights)] ダイヤモンド紫外線センサー素子2005

    • Inventor(s)
      小出康夫, リョウ メイヨン, ホセアルバレッツ
    • Industrial Property Rights Holder
      物資・材料研究機構
    • Industrial Property Number
      2005-032923
    • Filing Date
      2005-11-14
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Patent(Industrial Property Rights)] ダイヤモンド紫外光センサー2005

    • Inventor(s)
      Y. Koide, M. Liao, J. Alvarez
    • Industrial Property Rights Holder
      物資・材料研究機構
    • Filing Date
      2005-11-22
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Patent(Industrial Property Rights)] ダイヤモンド紫外光センサー2005

    • Inventor(s)
      小出 康夫, リョウ メイヨン, ホセ アルバレッツ
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Filing Date
      2005-08-01
    • Related Report
      2005 Annual Research Report
  • [Patent(Industrial Property Rights)] ダイヤモンド紫外線センサー2005

    • Inventor(s)
      小出 康夫, リョウ メイヨン, ホセ アルバレッツ
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Filing Date
      2005-08-29
    • Related Report
      2005 Annual Research Report
  • [Patent(Industrial Property Rights)] ダイヤモンド紫外線センサー素子2005

    • Inventor(s)
      小出 康夫, リョウ メイヨン, ホセ アルバレッツ
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Filing Date
      2005-11-14
    • Related Report
      2005 Annual Research Report
  • [Patent(Industrial Property Rights)] ダイヤモンド半導体整流素子2005

    • Inventor(s)
      小出康夫, リョウメイヨン, ホセアルバレッツ
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Filing Date
      2005-05-16
    • Related Report
      2004 Annual Research Report
  • [Patent(Industrial Property Rights)] ダイヤモンド紫外光センサー素子2004

    • Inventor(s)
      小出康夫
    • Industrial Property Rights Holder
      物資・材料研究機構
    • Industrial Property Number
      2004-124302
    • Filing Date
      2004-04-20
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Patent(Industrial Property Rights)] ダイヤモンド紫外光トランジスタ素子2004

    • Inventor(s)
      小出康夫
    • Industrial Property Rights Holder
      物資・材料研究機構
    • Industrial Property Number
      2004-124303
    • Filing Date
      2004-04-20
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Patent(Industrial Property Rights)] ダイヤモンド紫外光センサー2004

    • Inventor(s)
      小出康夫, リョウ メイヨン, ホセアルバレッツ
    • Industrial Property Rights Holder
      物資・材料研究機構
    • Industrial Property Number
      2004-340657
    • Filing Date
      2004-11-25
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Patent(Industrial Property Rights)] ダイヤモンド紫外光センサー素子2004

    • Inventor(s)
      小出康夫
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Filing Date
      2004-04-20
    • Related Report
      2004 Annual Research Report
  • [Patent(Industrial Property Rights)] ダイヤモンド紫外光トランジスタ素子2004

    • Inventor(s)
      小出康夫
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Filing Date
      2004-04-20
    • Related Report
      2004 Annual Research Report
  • [Patent(Industrial Property Rights)] ダイヤモンド紫外光センサー2004

    • Inventor(s)
      小出康夫, リョウメイヨン, ホセアルバレッツ
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Filing Date
      2004-11-25
    • Related Report
      2004 Annual Research Report
  • [Publications] Yasuo Koide: "Peculiarity of depletion region in diamond pn-junction"Jpn.J.Appl.Phys.. 42. 6800-6803 (2003)

    • Related Report
      2003 Annual Research Report

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Published: 2003-04-01   Modified: 2016-04-21  

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