• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Mechanism Investigations and Control of Phonon-Excitation Anneal Process for Ultra-Shallow Junction Formation

Research Project

Project/Area Number 15360388
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Material processing/treatments
Research InstitutionOsaka University (2004-2005)
Kyoto University (2003)

Principal Investigator

SETSUHARA Yuichi  Osaka University, Joining & Welding Res.Inst., Professor, 接合科学研究所, 教授 (80236108)

Co-Investigator(Kenkyū-buntansha) ONO Kouichi  Kyoto University, Grad.Sch.Eng., Professor, 大学院・工学研究科, 教授 (30311731)
TAKAHASHI Kazuo  Kyoto University, Grad.Sch.Eng., Research Associate, 大学院・工学研究科, 助手 (50335189)
FUJITA Masayuki  Institute for Laser Technology, Senior Researcher, 主任研究員(研究職) (30260178)
HASHIDA Masaki  Kyoto University, Inst.for Chem.Res., Research Associate, 化学研究所, 助手 (50291034)
Project Period (FY) 2003 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥15,100,000 (Direct Cost: ¥15,100,000)
Fiscal Year 2005: ¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 2004: ¥6,700,000 (Direct Cost: ¥6,700,000)
Fiscal Year 2003: ¥5,000,000 (Direct Cost: ¥5,000,000)
Keywordsultra-shallow junction / phonon excitation / ultra-short pulse laser / non-equilibrium process / plasma surface process / 非平衡プラズマ照射 / ミリ波照射
Research Abstract

Formation of ultra-shallow junctions (10-30 nm) is required for fabrication of CMOS devices in next-generation ULSIs. State-of-the-art technologies for the dopant activation are based on thermal processes such as rapid thermal annealing (RTA) and laser thermal annealing with surface melting, which are constrained by the thermal budget to cause unwanted transient diffusion of the dopants into deeper region and/or in lateral direction. This research has been carried out to investigate the non-equilibrium (non-thermal) anneal processes of the implanted dopants in the shallow region by directly exciting phonons and/or interatomic bonding states as one of the effective low-temperature formation technology of the ultra-shallow junctions. Major results are summarized as follows. 1) Pomp-probe reflectivity measurements showed that the ultra-short pulse laser irradiation induced phonon vibrations followed by relaxation of the optically excited carriers, in which the phonon vibration was enhanced nonlinearly with laser intensities. 2) Cross-sectional high-resolution TEM observations confirmed successful re-crystallization of the implanted layer by the ultra-short pulse laser irradiation. 3) Sheet resistance of the implanted layer was controlled by the laser irradiation conditions, in which the sheet resistance was confirmed to show close correlation with the atomic-scale nanostructure. 4) Feasibility of the sheet resistance as low as 400 ohms/sq. was demonstrated for the 0.5-keV B implanted samples. 5) As one of the effective surface excitation processes to control defects after the laser irradiation, plasma technologies were developed for generation and control of the large-area non-equilibrium plasmas, in which feasibility of the 300-mm wafer processes was demonstrated.

Report

(4 results)
  • 2005 Annual Research Report   Final Research Report Summary
  • 2004 Annual Research Report
  • 2003 Annual Research Report
  • Research Products

    (33 results)

All 2006 2005 2004 2003 Other

All Journal Article (28 results) Publications (5 results)

  • [Journal Article] Properties of Inductively-Coupled RF Plasma Sources with Multiple Low-Inductance Antenna Modules2006

    • Author(s)
      K.Takenaka
    • Journal Title

      Proc.6^<th> International Conf.on Reactive Plasmas and 23^<rd> Symp.on Plasma Processing, Matsushima, Japan, Jan. 24-27, (2006)

      Pages: 183-184

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Properties of Inductively-Coupled RF Plasma Sources with Multiple Low-Inductance Antenna Modules2006

    • Author(s)
      K.Takenaka, Y.Setsuhara, K.Nishisaka, A.Ebe, S.Sugiura, K.Takahashi, K.Ono
    • Journal Title

      Proc.6th International Conf. on Reactive Plasmas and 23rd Symp. on Plasma Processing, Matsushima, Japan, Jan.24-27

      Pages: 183-184

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Properties of Inductively-Coupled RF Plasma Sources with Multiple Low-Inductance Antenna Modules2006

    • Author(s)
      K.Takenaka
    • Journal Title

      Proc.6^<th> International Conf.on Reactive Plasmas and 23^<rd> Symp.on Plasma Processing, Matsushima, Japan, Jan.24-27, (2006)

      Pages: 183-184

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Nonequilibrium Activation of Boron-Implanted Ultra-Shallow Junctions By Femtosecond-Laser Induced Phonon Excitation Process2005

    • Author(s)
      Y.Setsuhara
    • Journal Title

      4th International Conference on Silicon Epitaxy and Hetereostructures (ICSI-4), Awaji, Japan, May 23-26, (2005)

      Pages: 306-307

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Annual Research Report 2005 Final Research Report Summary
  • [Journal Article] 次世代メートルサイズ大面積プロセス用プラズマ源2005

    • Author(s)
      節原裕一
    • Journal Title

      プラズマ・核融合学会誌 81・2

      Pages: 85-93

    • NAID

      110003827774

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] 次世代半導体接合形成2005

    • Author(s)
      節原裕一
    • Journal Title

      光技術応用システムのフィージビリティー調査報告書-フェムト秒加工技術-(財団法人光産業技術振興協会)

      Pages: 63-89

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] メートルサイズの大面積プロセスに向けたプラズマ技術2005

    • Author(s)
      節原裕一
    • Journal Title

      表面技術 56・5

      Pages: 268-275

    • NAID

      10015665593

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] フェムト秒レーザーを用いた半導体微細加工2005

    • Author(s)
      井澤友策
    • Journal Title

      レーザー学会 第343回研究会報告

      Pages: 19-25

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Annual Research Report 2005 Final Research Report Summary
  • [Journal Article] Nonequilibrium Activation of Boron-Implanted Ultra-Shallow Junctions By Femtosecond-Laser Induced Phonon Excitation Process2005

    • Author(s)
      Y.Setsuhara, M.Hashida, M.Fujita
    • Journal Title

      4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji, Japan, May 23-26

      Pages: 306-307

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Meter-scale Large-Area Plasma Sources for Next-Generation Processes2005

    • Author(s)
      Y.Setsuhara
    • Journal Title

      J.Plasma and Fusion Research 81(2)

      Pages: 85-93

    • NAID

      110003827774

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Technologies for next-generation shallow junction formation2005

    • Author(s)
      Y.Setsuhara
    • Journal Title

      Research Report for Feasibility of Applications in Optical Technologies - Femtosecond Laser Processing Technologies - (Optoelectronic Industry And Technology Development Association)

      Pages: 63-89

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Plasma Technologies for Meters-scale Large-Area Processes2005

    • Author(s)
      Y.Setsuhara, A.Ebe
    • Journal Title

      J.Surface Finishing Society of Japan 56(5)

      Pages: 268-275

    • NAID

      10015665593

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Micro-fabrications of semiconductors with femtosecond lasers2005

    • Author(s)
      Y.Izawa, Y.Setsuahra, M.Fujita, Y.Izawa
    • Journal Title

      Proc.343rd Laser Society Symposium

      Pages: 19-25

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Formation of Ultra-Shallow Junctions by Laser-Induced Nonequillibrium Modification Process of Surface Nano Layers2004

    • Author(s)
      Y.Setsuhara
    • Journal Title

      Proc.7th China-Japan Symposium on Thin Films (Chengdu, China, September 20-22, 2004)

      Pages: 23-24

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Low-Temperature Activation of Ion Implanted Nano-Scale Dopant Layer for Ultra-Shallow Semiconductor Junction Formation by Nonequillibrium Phonon Excitation Processes2004

    • Author(s)
      Y.Setsuhara
    • Journal Title

      Ninth International Conference on Plasma Surface Engineering (Garmisch-Partenkirchen, Germany, September 13-17, 2004)

      Pages: 372-372

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Standing-Wave-Free Large-Area Inductively Coupled Plasmas with Multiple Low-Inductance Antenna Modules - Novel Plasma Technologies toward Meters-Scale FPD Processing -2004

    • Author(s)
      Y.Setsuhara
    • Journal Title

      Proc.The International Union of Material Research Society - International Conference in Asia 2004 (IUMRS-ICA-2004), Hsinchu, Taiwan, November 16-18, (2004) (CDROM)

      Pages: 1-12

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Applications of femtosecond lasers2004

    • Author(s)
      M.Fujita, M.Hashida
    • Journal Title

      Oyo Butsuri 73

      Pages: 178-185

    • NAID

      10011962847

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Formation of Ultra-Shallow Junctions by Laser-Induced Nonequilibrium Modification Process of Surface Nano Layers2004

    • Author(s)
      Y.Setsuhara, M.Hashida, M.Fujita
    • Journal Title

      Proc.7th China-Japan Symposium on Thin Films, Chengdu Sichuan, China, September 20-22

      Pages: 23-24

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Low-Temperature Activation of Ion Implanted Nano-Scale Dopant Layer for Ultra-Shallow Semiconductor Junction Formation by Nonequilibrium Phonon Excitation Processes2004

    • Author(s)
      Y.Setsuhara, M.Hashida, M.Fujita, K.Takahashi, K.Ono
    • Journal Title

      Ninth International Conference on Plasma Surface Engineering (Garmisch-Partenkirchen, Germany, September 13-17)

      Pages: 372-372

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Standing-Wave-Free Large-Area Inductively Coupled Plasmas with Multiple Low-Inductance Antenna Modules2004

    • Author(s)
      Y.Setsuhara, A.Ebe
    • Journal Title

      Proc. The International Union of Material Research Society - International Conference in Asian 2004 (IUMRS-ICA-2004), Hsinchu, Taiwan, November 16-18 (CD-ROM)

      Pages: 1-12

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Formation of Ultra-Shallow Junctions by Laser-Induced Nonequillibrium Modification Process of Surface Nano Layers2004

    • Author(s)
      Y.Setsuhara, M.Hashida, M.Fujita
    • Journal Title

      Proc.7th China-Japan Symposium on Thin Films(Chengdu, China, September 20-22,2004)

      Pages: 23-24

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Low-Temperature Activation of Ion Implanted Nano-Scale Dopant Layer for Ultra-Shallow Semiconductor Junction Formation by Nonequillibrium Phonon Exitation Processes2004

    • Author(s)
      Y.Setsuhara, M.Hashida, M.Fujita, K.Takahashi, K.Ono
    • Journal Title

      Ninth International conference on Plasma Surface Engineering(Garmisch-Partenkirchen, Germany, September 13-17,2004)

      Pages: 372-372

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Standing-Wave-Free Large-Area Inductively Coupled Plasmas with Multiple Low-Inductance Antenna Modules - Novel Plasma Technologies toward Meters-Scale FPD Processing -2004

    • Author(s)
      Y.Setsuhara, A.Ebe
    • Journal Title

      Proc.The International Union of Material Research Society - International Conference in Asian 2004 (IUMRS-ICA-2004),Hsinchu, Taiwan, November 16-18,(2004) (CDROM)

      Pages: 1-12

    • Related Report
      2004 Annual Research Report
  • [Journal Article] PHOTON-INDUCED PHONON EXCITATION PROCESS AS NONEQUILLIBRIUM SUBSURACE MODIFICATION OF ION-IMPLANTED NANO-SCALE LAYER FOR ULTRA-SHALLOW JUNCTION FORMATION2003

    • Author(s)
      Y.Setsuhara
    • Journal Title

      4th Asian-European International Conference on Plasma Surface Engineering (AEPSE 2003), Jeju, Korea, September 28-October 3

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] NONEQUILLIBRIUM FORMATION OF NANOSCALE ULTRA-SHALLOW JUNCTIONS BY COHERENT PHONON EXCITATION PROCESS2003

    • Author(s)
      Y.Setsuhara
    • Journal Title

      International Conference on the Characterization and Control of Interfaces for High Qulity Advanced Materials, Kurashiki, Japan, September 24-27

      Pages: 91-91

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] フェムト秒レーザーの応用2003

    • Author(s)
      藤田雅之
    • Journal Title

      応用物理 73・2

      Pages: 178-185

    • NAID

      10011962847

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Photon-Induced Phonon Excitation Process As Nonequilibrium SUBSURFACE MODIFICATION OF ION-IMPLANTED NANO-SCALE LAYER FOR ULTRA-SHALLOW JUNCTION FORMATION2003

    • Author(s)
      Y.Setsuhara
    • Journal Title

      4th Asian-European International Conference on Plasma Surface Engineering (AEPSE 2003), Jeju, Korea, September 28-October 3

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] NONEQUILIBRIUM FORMATION OF NANOSCALE ULTRA-SHALLOW JUNCTIONS BY COHERENT PHONON EXCITATION PROCESS2003

    • Author(s)
      Y.Setsuhara, M.Hashida, M.Fuita, S.Adachi, B.Mizuno, K.Takahashi, K.Nogi, K.Ono
    • Journal Title

      International Conference on the Characterization and Control of Interfaces for High Quality Advanced Materials, Kurashiki, Japan, September 24-27

      Pages: 91-91

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Publications] Y.Setsuhara: "PHOTON-INDUCED PHONON EXCITATION PROCESS AS NONEQUILLIBRIUM SUBSURACE MODIFICATION OF ION-IMPLANTED NANO-SCALE LAYER FOR ULTRA-SHALLOW JUNCTION FORMATION"4th Asian-European International Conference on Plasma Surface Engineering (AEPSE 2003), Jeju, Korea, September 28-October 3. (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] 橋田 昌樹: "フェムト秒レーザーの産業界での期待 フェムト秒レーザ加工"電気学会誌. Vol.122, No.11. 749-753 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Y.Setsuhara, M.Hashida, M.Fuita, S.Adachi, B.Mizuno, K.Takahashi, K.Nogi, K.Ono: "PHOTON-INDUCED PHONON EXCITATION PROCESS AS NONEQUILLIBRIUM SUBSURACE MODIFICATION OF ION-IMPLANTED NANO-SCALE LAYER FOR ULTRA-SHALLOW JUNCTION FORMATION"International Conference on the Characterization and Control of Interfaces for High Qulity Advanced Materials, Kurashiki, Japan. (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Y.Setsuhara, M.Hashida, M.Fuita, S.Adachi, B.Mizuno, K.Takahashi, K.Ono: "NONEQUILLIBRIUM DOPANT ACTIVATION OF ULTRA-SHALLOW JUNCTIONS BY COHERENT PHONON EXCITATION PROCESS"7th International Workshop on the Fabrication, characterization and Modeling of Ultra Shallow Doping Profiles in Semiconductors, Santa Cruz, California, USA, April 27-May 1. (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] 藤田雅之, 橋田昌樹: "フェムト秒レーザーの応用"応用物理. Vol.73, No.2. 178-185 (2003)

    • Related Report
      2003 Annual Research Report

URL: 

Published: 2003-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi