| Project/Area Number |
15510095
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nanostructural science
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| Research Institution | SAITAMA INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
TANAKA Ken-ichi SAITAMA INSTITUTE OF TECHNOLOGY, SAITAMA INST OF TECH., ADV.SCI.RES.LABO., PROFESSOR (00016718)
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| Co-Investigator(Kenkyū-buntansha) |
NGGISI Riichiro Saitama Institute of Technology, Dept. Human Sal, Lacturer (70237808)
ITO Masatoki SAITAMA INSTITUTE OF TECHNOLOGY, Keio University Faculty of Sci and Techri., Professor (80005438)
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| Project Period (FY) |
2003 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥3,300,000 (Direct Cost: ¥3,300,000)
Fiscal Year 2004: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 2003: ¥2,100,000 (Direct Cost: ¥2,100,000)
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| Keywords | Si (111)-7x7 Surface / Deposition of Metals (Sn, Zn, Ga, Ag) / Dissociation of CH3OH / Supra honeycomb / Zn3-cluster / Si-Adatom / Surface new materials / 新物質層 / 自己組織化 / 吸着のrecurosor / Sn_2、Zn_3クラスター形成 / ハネカム構造 / 吸着構造形成の初期過程 / 弱い相互作用 / アルコールの解離吸着 / 解離吸着(CH_3OH, C_2H_5OH, CH(CH_3)_2OH) / Zn_3Sn_2クラスターの配列 |
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| Research Abstract |
Zn ATOMS DEPOSITEDON A SI (111)-7x7 SURFACE FORM ZN_<3->CLUSTER IN EVERY FAULTED AND UNFAULTED HALVESOF THE SIi (111)-7x7 SURFACE. MORE DEPOSITION OF ZN CONDUCTED THE LAYER-BY-LAYER GROWS OF THE 2^<ND> AND 3^<RD>LAYERS IN SUPURA HONEYCOMB STRUCTURE COMPOSED OF ZN_<3->COLUMN. SCANNING TUNNELING MICROSCOPY (STM) SUGGESTED THAT THE SUPRAHONEYCOMB LAYER OF ZN_3 COLUMNIS SEMI-CONDUCTIVE FROM ONE-MONOLAER TO THREE LAYERS. NO HONEYCOMB STUCKING OCCURRED IN THE 4^<th> LAYER AND METALLIC Zn-ISLANDS WERE FORMED.
IN THISESEARCH, WE FOUND THE PATTERNING OF SI (111)-7x7SURFACE BY THE REACTION OF SURFACE SI=ATOMS WITH ALCOHOLS. WHEN A SI111) SURFACEWAS EXPOSED TO CH_3OH, CH3OH MOLECULE UNDERGOES DISSICIATION ON A PAIR SITE OF SI-ADATOM AND SI-RESTATOM PAIR BY FORMING SIi-OCH_3 and SI-H. THEREFORE, WHEN THE (111)-7x7 SURFACEIS SATURATED BY THE ADSORPTION OF CH3OH, THREE INTACT SI-ADATOMS ARE REMAINED IN EVERY FAULTED AND UNFAULTED HALVES. THE PATTERNING OF DEPOSITTED NETALS IN DOTS OCCURS BY NUCLEATION AT THE INTACT SI-ADATOMS.
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