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HIGHLY SENSITIVE DETECTION OF HAZARDOUS GASES PRODUCED IN THE PLASMAS OF PERFLUOROCARBON ALTERNATIVES

Research Project

Project/Area Number 15540476
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Plasma science
Research InstitutionKYUSHU UNIVERSITY

Principal Investigator

FURUYA Kenji  Kyushu University, Department of Molecular & Material Sciences, Accociate Professor, 大学院・総合理工学研究院, 助教授 (70229128)

Project Period (FY) 2003 – 2004
Project Status Completed (Fiscal Year 2004)
Budget Amount *help
¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 2004: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2003: ¥2,300,000 (Direct Cost: ¥2,300,000)
KeywordsPerfluorocarbon plasma / SiO2 etching process / Mass spectrometry / Dication of CF3 / Growth of gaseous molecule / Lithium ion / パーフルオロカーボン / プラズマ / CF4検出 / CF4生成機構
Research Abstract

Making use of CF_3^<2+> as a specific product ion to quantify selectively CF_4 produced in the SiO_2 etching process by plasmas of perfluorocompounds(PFCs), such as c-C_4F_8,C_3F_8,and C_2F_6,has been proposed and investigated in the present experiments by measuring mass spectra in and out of the plasmas. It is known that the CF_3^<2+> ion does not appear in the mass spectra of any stable PFCs, except for CF_4. This dication has a characteristic mass of 34.5 amu and is easy to find in mass spectrometry. There are many kinds of unstable chemical species in the plasmas, such as neutral free radicals, ions, and excited atoms/molecules, as well as stable compounds. However, the quantity of CF_3^<2+> originated from the CF_3 radical in the mass spectra measured in situ has been found to be negligible by measuring the mass spectra of the pyrolysis products of CF_3I. The quantity of CF_3^+ in the plasma is too small to explain the intensity of CF_3^<2+> appearing in the mass spectra measured … More in situ, even if CF_3^+ could produce stable CF_3^<2+> by ionization. A stable compound of CHF_3 may also be formed in PFC plasmas due to a trace amount of water as an impurity. A very weak peak of CF_3^<2+> has been observed in the mass spectrum of CHF_3 in the present experiments, although there has been no report of the CF_3^<2+> formation by the ionization of CHF_3. It has been confirmed, however, that the contribution of CF_3^<2+> originated from CHF_3 to the observed mass spectra of the PFC plasmas is practically negligible. It is therefore concluded that CF_3^<2+> can be used as the fingerprint of CF_4 in mass spectrometry. Application of this new method to the quantitative analysis of CF_4 produced in the SiO_2 etching process by PFC plasmas may result in the fact that the CF_4 production advances significantly not only in the SiO_2 etching region of the plasmas and but also downstream in the plasmas.
In addition, the growth of gaseous neutral species and positive ions was investigated in the downstream region of Ar/CF_4 plasmas by mass spectrometry. As a result, there were several series of C_nF_<2n+1>^+(n=1-7),C_nF_<2n-1>^+(n=3-8) and C_nF_<2n-3>^+(n=4-9) for the positive ions and C_nF_<2n+2>(n=2-7) and C_nF_<2n>(n=4-8) for the neutral species. The intensity dependence of the positive ions on the partial pressure of CF_4 was quite different from that of the neutral species, demonstrating that their growth mechanisms are independent of each other. Less

Report

(3 results)
  • 2004 Annual Research Report   Final Research Report Summary
  • 2003 Annual Research Report
  • Research Products

    (18 results)

All 2005 2004 2003 Other

All Journal Article (14 results) Publications (4 results)

  • [Journal Article] Growth of gaseous macromolecules downstream in perfluorocarbon plasmas and its application to thin film formation2005

    • Author(s)
      K.Furuya, S.Yukita, H.Okumura, R.Nakanishi, M.Makita, A.Harata
    • Journal Title

      Plasma Science Symposium 2005/The 22nd Symposium on Plasma Processing (Proceedings)

      Pages: 623-624

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Growth of Fluorocarbon Macromolecules in a Gas Phase (I). Mass Spectrometric Investigation of Products in the Downstream Region of Ar/CF_4 Plasmas2005

    • Author(s)
      Kenji Furuya, Shinobu Yukita, Hiroshi Okumura, Akira Harata
    • Journal Title

      Chemistry Letters 34

      Pages: 224-225

    • NAID

      10014364385

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Growth of gaseous macromolecules downstream in perfluorocarbon plasmas and its application to thin film formation2005

    • Author(s)
      K.Furuya.S.Yukita, H.Okumura, R.Nakanishi, M.Makita, A.Harata
    • Journal Title

      Plasma Science Symposium 2005/The 22nd Symposium on Plasma Processing, Proceedings

      Pages: 623-624

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Growth of fluorocarbon macromolecules in a gas phase (I). Mass spectrometric investigation of products in the downstream region of Ar/CF_4 plasmas2005

    • Author(s)
      K.Furuya.S.Yukita, H.Okumura, A.Harata
    • Journal Title

      Chem.Lett. 34

      Pages: 224-225

    • NAID

      10014364385

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Growth of Fluorocarbon Macromolecules in a Gas Phase(I). Mass Spectrometric Investigation of Products in the Downstream Region of Ar/CF_4 Plasmas2005

    • Author(s)
      Kenji Furuya, Shinobu Yukita, Hiroshi Okumura, Akira Harata
    • Journal Title

      Chemistry Letters 34

      Pages: 224-225

    • NAID

      10014364385

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Growth of gaseous macromolecules downstream in perfluorocarbon plasmas and its application to thin film formation2005

    • Author(s)
      K.Furuya, S.Yukita, H.Okumura, R.Nakanishi, M.Makita, A.Harata
    • Journal Title

      Plasma Science Symposium 2005/The 22nd Symposium on Plasma Processing(Proceedings)

      Pages: 623-624

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Quantitative Analysis of CF4 Produced in the SiO_2 Etching Process Using c-C_4F_8, C_3F_8, and C_2F_6 Plasmas by In Situ Mass Spectrometry2004

    • Author(s)
      Kenji Furuya, Yoshihiko Hatano
    • Journal Title

      Japanese Journal of Applied Physics 43

      Pages: 342-346

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] ドライエッチング過程で再合成される有害物質の生成機構に関する研究2004

    • Author(s)
      古屋 謙治
    • Journal Title

      新エネルギー・産業技術総合開発機構(NEDO)委託「電子デバイス製造プロセスで使用するエッチングガスの代替ガス・システム及び代替プロセスの研究開発」成果報告書(技術研究組合超先端電子技術開発機構(ASET))

      Pages: 524-538

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Study on the production mechanism of hazardous gases re-synthesized in dry etching processes (in Japanese)2004

    • Author(s)
      K.Furuya
    • Journal Title

      Report of Research and Development of Alternative Gas System and Alternative Process Technology for Etching Gases Used in the Manufacture of Electronic Devices

      Pages: 524-538

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Quantitative Analysis of CF_4 Produced in the SiO_2 Etching Process by c-C_4F_8,C_3F_8,and C_2F_6 Plasmas Using In-Situ Mass Spectrometry2004

    • Author(s)
      K.Furuya, Y.Hatano
    • Journal Title

      Jpn.J.Appl.Phys. 43

      Pages: 342-346

    • NAID

      10021992333

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Quantitative Analysis of CF_4 Produced in the SiO_2 Etching Process Using c-C_4F_8, C_3F_8, and C_2F_6 Plasmas by In Situ Mass Spectrometry2003

    • Author(s)
      Kenji Furuya, Yoshihiko Hatano
    • Journal Title

      Atomic Collision Research in Japan 29

      Pages: 1-2

    • NAID

      10011949690

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] c-C_4F_8、C_3F_8、およびC_2F_6プラズマを用いたSiO_2エッチングプロセスで生成したCF_4のIn Situ質量分析法による定量分析2003

    • Author(s)
      古屋 謙治, 籏野 嘉彦
    • Journal Title

      九州大学中央分析センター報告 21

      Pages: 33-41

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Quantitative Analysis of CF_4 Produced in the SiO_2 Etching Process by c-C_4F_8,C_3F_8,and C_2F_6 Plasmas Using In-Situ Mass Spectrometry2003

    • Author(s)
      K.Furuya, Y.Hatano
    • Journal Title

      Atomic Collision Research in Japan 29

      Pages: 1-2

    • NAID

      10021992333

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Quantitative Analysis of CF_4 Produced in the SiO_2 Etching Process Using c-C_4F_8,C_3F_8,and C_2F_6 Plasmas by In Situ Mass Spectrometry (in Japanese)2003

    • Author(s)
      K.Furuya, Y.Hatano
    • Journal Title

      Report of the Center of Advanced Instrumental Analysis, Kyushu University 21

      Pages: 33-41

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Publications] Kenji Furuya, Yoshihiko Hatano: "Quantitative Analysis of CF_4 Produced in the SiO_2 Etching Process Using c-C_4F_8, C_3F_8, and C_2F_6 Plasmas by In Situ Mass Spectrometry"Japanese Journal of Applied Physics. Vol.43・No.1. 342-346 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] 古屋 謙治: "ドライエッチング過程で再合成される有害物質の生成機構に関する研究"新エネルギー・産業技術総合開発機構(NEDO)委託「電子デバイス製造プロセスで使用するエッチングガスの代替ガス・システム及び代替プロセスの研究開発」成果報告書(技術研究組合 超先端電子技術開発機構(ASET)). (印刷中). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] 古屋 謙治, 籏野 嘉彦: "c-C_4F_8、C_3F_8、およびC_2F_6プラズマを用いたSiO_2エッチングプロセスで生成したCF_4のIn Situ質量分析法による定量分析"九州大学中央分析センター報告. 21号. 33-41 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Kenji Furuya, Yoshihiko Hatano: "Quantitative Analysis of CF_4 Produced in the SiO_2 Etching Process Using c-C_4F_8, C_3F_8, and C_2F_6 Plasmas by In Situ Mass Spectrometry"Atomic Collision Research in Japan. Vol.29. 1-2 (2003)

    • Related Report
      2003 Annual Research Report

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Published: 2003-04-01   Modified: 2016-04-21  

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