| Project/Area Number |
15560007
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Osaka University |
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Principal Investigator |
EMURA Shuichi Osaka University, Institute of Scientific and Industrial Research, Research associate, 産業科学研究所, 助手 (90127192)
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| Co-Investigator(Kenkyū-buntansha) |
ASAHI Hajime Osaka University, Institute of Scientific and Industrial Research, Professor, 産業科学研究所, 教授 (90192947)
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| Project Period (FY) |
2003 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2004: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 2003: ¥3,100,000 (Direct Cost: ¥3,100,000)
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| Keywords | Spintronics / Dilute magnetic semiconductors / Nitride semiconductor / Photoluminescence / Rare earthes / Ferromagnetism / XAFS / Structural solid state physica / 稀薄磁性半導体 / XMCD / GaN / ワイドギャップ半導体 / 希土類元素 / 遷移金属元素 |
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| Research Abstract |
We investigated on the local circumstances and ferromagnetism of GaN doped Cr and Gd elements by using XAFS method and XMCD. We found the local structure around Cr in GaN that the Cr atom is substituted on Ga atom until 4% of the Cr concentration. In deep doping over 4%, Cr atoms construct a CrN structure in GaN. Our GaN : Cr showed two phases of hexagonal and cubic structures from the first nearest neighbor analysis around Cr atoms. GaGdN with 6% concentration of Gd atoms also showed the substitutional arraignment on Gd. We furthermore found a new luminescence in GaGdN at 652nm, which is tentatively assigned to f-f transition of divalent Gd ions.
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