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Study on device technology of ZnTe-based materials for fabrication of pure-green LED with high brightness

Research Project

Project/Area Number 15560010
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionSaga University

Principal Investigator

OGAWA Hiroshi  Saga University, Synchrotron light research center, professor, シンクロトロン光応用研究センター, 教授 (10039290)

Co-Investigator(Kenkyū-buntansha) 田中 徹  佐賀大学, 理工学部, 助手 (20325591)
西尾 光弘  佐賀大学, 理工学部, 教授 (60109220)
Project Period (FY) 2003 – 2004
Project Status Completed (Fiscal Year 2004)
Budget Amount *help
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2004: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 2003: ¥2,200,000 (Direct Cost: ¥2,200,000)
KeywordsZnTe / ZnMgTe / pure-green LED / ドーピング / 発光ダイオード / 有機金属化学気相成長 / ルミネッセンススペクトル
Research Abstract

In this study, we have investigated p-type or n-type doping and characterization of ZnTe and ZnMgTe in order to fabricate pure-green LED with high brightness. We have clarified detailed behaviors for doping of ZnTe using tris-dimethylaminophosphorus, n-butylchloride or n-butyliodide. in a metalorganic vapor phase epitaxial growth system. In addition, Al thermal diffusion into p-type ZnTe has been carried out in order to attain n-type layer, which leads to low cost LED. Highly conductive p-type ZnTe and ZnMgTe bulk crystals for substrate have been obtained successfully by using vertical Bridgman method, and good ohmic contacts have been developed. By using these results, we have succeeded in fabricating ZnTe based LEDs.

Report

(3 results)
  • 2004 Annual Research Report   Final Research Report Summary
  • 2003 Annual Research Report
  • Research Products

    (23 results)

All 2005 2004 2003 Other

All Journal Article (16 results) Patent(Industrial Property Rights) (1 results) Publications (6 results)

  • [Journal Article] Electroluminescence and photoluminescence characteristics in ZnTe LED fabricated by Al thermal diffusion2004

    • Author(s)
      TTanaka, Y.Matsuno, Y.Kume, M.Nishio, Q Guo, H Ogawa
    • Journal Title

      physica status solidi (c) Vol.1

      Pages: 1026-1029

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Growth of phosphorus-doped ZnTe layers by metalorganic vapour phase epitaxy using tris-dimethylaminonhosnhorus2004

    • Author(s)
      Kazuki Hayashida, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa
    • Journal Title

      physica status solidi (c) Vol.1

      Pages: 718-721

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Specific Contact Resistance of Pd Electroless to p-type ZnTe2004

    • Author(s)
      Mitsuhiro Nishio, Tooru Tanaka, Qixin Guo, Hiroshi Ogawa
    • Journal Title

      International Conference on Electrical Engineering 2004 Conference Proceedings Vol.11

      Pages: 666-669

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Selective Dry Etching of Zinc Telluride Using Aluminum Mask2004

    • Author(s)
      Q.X.Guo, Y.Matsumoto, T.Tanaka, M.Nishio, H.Ogawa
    • Journal Title

      Japanese Journal of Applied Physics Vol.43

      Pages: 4157-4158

    • NAID

      10013317081

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Electroluminescence and photoluminescence characteristics in ZnTe LED fabricated by Al thermal diffusion2004

    • Author(s)
      T Tanaka, Y.Matsuno, Y.Kume, M.Nishio, Q.Guo, H Osawa
    • Journal Title

      physica status solidi (c) Vol.1

      Pages: 1026-1029

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Growth of phosphorus-doped ZnTe layers by metalorganic vapour phase epitaxy using tris-dimethylaminophosphorus2004

    • Author(s)
      Kazuki Hayashida, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa
    • Journal Title

      physica status solidi (c) Vol.1

      Pages: 718-721

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Synchrotron Radiation-Excited Etching of ZnTe2004

    • Author(s)
      Tooru Tanaka, Yusuke Kume, Sinji Tokunaga, Kazuki Hayashida, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa
    • Journal Title

      AIP series of conference proceedings Vol.705

      Pages: 1154-1157

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Electroluminescence and photoluminescence characteristics in ZnTe LED fabricated by Al thermal diffusion2004

    • Author(s)
      T.Tanaka, Y.Matsuno, Y.Kume, M.Nishio, Q.Guo, H.Ogawa
    • Journal Title

      physica status solidi (c) Vol.1

      Pages: 718-721

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Selective Dry Etching of Zinc Telluride Using Aluminum Mask2004

    • Author(s)
      Q.X.Guo, Y.Matsuno, T.Tanaka, M.Nishio, H.Ogawa
    • Journal Title

      Japanese Journal of Applied Physics Vol.43

      Pages: 4157-4158

    • NAID

      10013317081

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Fabrication of ZnTe Light-Emitting Diodes Using Bridgman-Grown Substrates2003

    • Author(s)
      Tooru TANAKA, Yusuke KUME, Mitsuhiro NISHIO, Qixin GUO, Hiroshi OGAWA, Akira YOSHIDA
    • Journal Title

      Japanese Journal of Applied Physics Vol.42

    • NAID

      80015933103

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Growth and optical properties of high-quality ZnTe homoepitaxial layers by metalorganic vapor phase epitaxy2003

    • Author(s)
      Tooru Tanaka, Kazuki Hayashida, Shanli Wang, Qixin Guo, Mitsuhiro Nishio, Hiroshi Ogawa
    • Journal Title

      Journal of Crystal Growth Vol.248

      Pages: 43-49

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Photoluminescence of Cl-doped ZnTe epitaxial layer grown by atmospheric pressure metalorganic vapor phase epitaxy2003

    • Author(s)
      Tooru Tanaka, a)Kazuki Hayashida, Mitsuhiro Nishio, Qixin Quo, Hiroshi Ogawa
    • Journal Title

      Journal of Applied Physics Vol.94

      Pages: 1527-1530

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Characterization of damage in reactive ion etched ZnTe2003

    • Author(s)
      Qixin Guo, Yuichi Matsumoto, Tooru Tanaka, Mituhiro Nishio, Hiroshi Ogawa
    • Journal Title

      Journal of Vacuum Science and Technology A 21

      Pages: 59-61

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy2003

    • Author(s)
      Tooru Tanaka, Kazuki Hayashida, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa
    • Journal Title

      Journal of Applied Physics Vol.94

      Pages: 5302-5306

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Photoluminescence properties of ZnTe homoepitaxial layers grown by synchrotron-radiation-excited growth using nitrogen carrier gas2003

    • Author(s)
      Tooru Tanaka, Kazuki Hayashida, Shanli Wang, Qixin Quo, Mitsuhiro Nishio, Hiroshi Ogawa
    • Journal Title

      Nuclear Instruments and Methods in Phvsics Research B Vol.199

      Pages: 336-360

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Effects of Dry Etching Processes on Optical Properties of ZnTe Surface Layers in Ultraviolet Region

    • Author(s)
      S.Wu, Z.Q.Ren, W.Z.Shen, H.Ogawa, Q.X.Guo
    • Journal Title

      Applied Surface Science (in press)

    • Related Report
      2004 Annual Research Report
  • [Patent(Industrial Property Rights)] 半導体素子の製造方法2005

    • Inventor(s)
      田中徹, 小川博司, 西尾光弘
    • Industrial Property Rights Holder
      国立大学法人佐賀大学
    • Filing Date
      2005-01-05
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Publications] Qixin Guo: "Characterization of damage in reactive ion etched ZnTe"Journal of Vacuum Science and Technology. A21. 59-61 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Tooru Tanaka: "Fabrication of ZnTe light-emitting diodes using Bridgman-grown substrates"Japanese Journal of Applied Physics. 42. L362-L364 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Tooru Tanaka: "Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy"Journal of Applied Physics. 93. 5302-5306 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Tooru Tanaka: "Photoluminescence of Cl-doped ZnTe epitaxial layer grown by atmospheric pressure metalorganic vapor phase epitaxy"Journal of Applied Physics. 94. 1527-1530 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Tooru Tanaka: "Electroluminescence and photoluminescence characteristics in ZnTe LED fabricated by Al thermal diffusion"physica status solidi. (in press).

    • Related Report
      2003 Annual Research Report
  • [Publications] Kasuki Hayashida: "Growth of phosphorus-doped ZnTe layers by metalorganic vapour phase epitaxy using tris-dimethylaminophosphorus"physica status solidi. (in press).

    • Related Report
      2003 Annual Research Report

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Published: 2003-04-01   Modified: 2016-04-21  

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