Study on device technology of ZnTe-based materials for fabrication of pure-green LED with high brightness
| Project/Area Number |
15560010
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Saga University |
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Principal Investigator |
OGAWA Hiroshi Saga University, Synchrotron light research center, professor, シンクロトロン光応用研究センター, 教授 (10039290)
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| Co-Investigator(Kenkyū-buntansha) |
田中 徹 佐賀大学, 理工学部, 助手 (20325591)
西尾 光弘 佐賀大学, 理工学部, 教授 (60109220)
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| Project Period (FY) |
2003 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2004: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 2003: ¥2,200,000 (Direct Cost: ¥2,200,000)
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| Keywords | ZnTe / ZnMgTe / pure-green LED / ドーピング / 発光ダイオード / 有機金属化学気相成長 / ルミネッセンススペクトル |
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| Research Abstract |
In this study, we have investigated p-type or n-type doping and characterization of ZnTe and ZnMgTe in order to fabricate pure-green LED with high brightness. We have clarified detailed behaviors for doping of ZnTe using tris-dimethylaminophosphorus, n-butylchloride or n-butyliodide. in a metalorganic vapor phase epitaxial growth system. In addition, Al thermal diffusion into p-type ZnTe has been carried out in order to attain n-type layer, which leads to low cost LED. Highly conductive p-type ZnTe and ZnMgTe bulk crystals for substrate have been obtained successfully by using vertical Bridgman method, and good ohmic contacts have been developed. By using these results, we have succeeded in fabricating ZnTe based LEDs.
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Report
(3 results)
Research Products
(23 results)
