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Time of flight, position-sensitive detection system for scattering spectroscopy and nano structure analysis

Research Project

Project/Area Number 15560022
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionOsaka Prefecture University

Principal Investigator

UMEZAWA Kenji  Osaka Pref.Univ., Dept.Mat.Sci., Associate Prof., 総合科学部, 助教授 (80213487)

Co-Investigator(Kenkyū-buntansha) NAKANISHI Shigemitsu  Osaka Pref.Univ., Dept.of Mat.Sci., Full Prof., 総合科学部, 教授 (70079052)
UEDA Kazuyuki  Toyota Institute of Technology, Full Prof., 大学院・工学研究科, 教授 (60029212)
Project Period (FY) 2003 – 2004
Project Status Completed (Fiscal Year 2004)
Budget Amount *help
¥3,800,000 (Direct Cost: ¥3,800,000)
Fiscal Year 2004: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2003: ¥3,000,000 (Direct Cost: ¥3,000,000)
Keywordsion beam / surface structure / time of flight / low energy / atom beam scattering / shadowcone / イオン散乱 / 表面
Research Abstract

We have been developing a low energy atom scattering system combined with a time-of-flight ion scattering spectrometer for insulator surface structural analysis. Position sensitive detector was not available due to higher cost. So much so that we have used a regular MCP detector instead of it.
Insulator surface structure is difficult to study because of charging effects during electron or ion beam bombardment. Structural analyses of insulator surfaces are very important in fundamental research as well as technology fields.
In our system, charged ion beams of 2keV-Ne+, are converted into neutral beams by charge exchange with the same element gas in a small cell, after the primary beam passes through a chopper.

Report

(3 results)
  • 2004 Annual Research Report   Final Research Report Summary
  • 2003 Annual Research Report
  • Research Products

    (7 results)

All 2005 Other

All Journal Article (4 results) Publications (3 results)

  • [Journal Article] Growth Process and Structure of Fe/Si(111) Ultrathin Film : Transition from Single Domain Fe(111)/Si(111) to β-FeSi22005

    • Author(s)
      R.Tsushima et al.
    • Journal Title

      Surface Science 579

      Pages: 73-79

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Dynamic response of target electrons upon low and medium energy ion impact2005

    • Author(s)
      T.Okazawa et al.
    • Journal Title

      Nucl.Instrum.Meth.B 230

      Pages: 31-35

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Growth Process and Structure of Fe/Si(111) Ultrathin Film : Transition from Single Domain Fe(111)/Si(111) to □-FeSi22005

    • Author(s)
      R.Tsuhima et al.
    • Journal Title

      Surf.Sci. 579

      Pages: 73-79

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Growth Process and Structure of Fe/Si(111) Ultrathin Film : Transition from Single-Domain Fe(111)/Si(111) to β-FeSi22005

    • Author(s)
      R.Tsushima et al.
    • Journal Title

      Surface Science 579

      Pages: 73-79

    • Related Report
      2004 Annual Research Report
  • [Publications] K.Ueda, M.Yoshimura: "Formation of Micro Fablication of nanofigures by focused electron beam-induced deposition"Thin Solid Films. (印刷中).

    • Related Report
      2003 Annual Research Report
  • [Publications] K.Ueda: "New Method of soft x-ray microscopy by slow-electron excitation"J.Japanese Applied Physics. 43-2B. L274-L276 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] 監修:水野寛之, 分担:梅澤憲司: "イオン工学ハンドブック"株式会社 イオン工学研究所. 1126(603-606) (2003)

    • Related Report
      2003 Annual Research Report

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Published: 2003-04-01   Modified: 2016-04-21  

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