| Budget Amount *help |
¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2004: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2003: ¥2,800,000 (Direct Cost: ¥2,800,000)
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| Research Abstract |
In the present study, AES depth profiling of GaAs/AlAs super lattice sample using the developed compact FLIG was performed with the ion energy ranging from 100 to 500eV. The practical etching rate of more than 1.5nm/min was attained in the energy region over 150eV. The high depth resolutions of 1.3,1.6,1.8 and 2.0nm (84-16%) were obtained with the sputtering energies of 100,150,200 and 300eV at the leading edge of Al-LVV depth profiles, respectively.
At the energy of 100eV, the best fit of the MRI calculation required different surface roughness of 0.4 and 1.2nm at the leading and trailing edges, leading to the remarkable improvement of the depth resolution at the leading edge (Δz_1=1.3nm) but followed by considerable deterioration at the trailing edge (Δz_1=2.7nm). Although this tendency is quite similar to the case of the ABS depth profiling with O_2^+ ion sputtering, probably due to the low sputtering yield of Al-oxides formed in AlAs layers by O_2^+ ion bombardment, any trace of oxygen adsorption onto a specimen surface could not be observed during the measurement. To investigate the origin of this phenomenon, we performed dynamic Monte-Carlo simulation.
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