| Project/Area Number |
15560037
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | Kanazawa Institute of Technology |
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Principal Investigator |
MINAMI Tadatsugu Kanazawa Institute of Tech., Engineering, Professor, 工学部, 教授 (70113032)
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| Co-Investigator(Kenkyū-buntansha) |
MIYATA Toshihiro Kanazawa Institute of Tech, Engineering, a Associate Professor, 工学部, 助教授 (30257448)
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| Project Period (FY) |
2003 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2004: ¥1,600,000 (Direct Cost: ¥1,600,000)
Fiscal Year 2003: ¥2,000,000 (Direct Cost: ¥2,000,000)
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| Keywords | Y_2O_3:Mn / Thin Film Electroluminescence / Oxide / Phosphor / (Y_2O_3-Ga_2O_3):Mn / (Y_2O_3-GeO_3):Mn / Sol-gel / Y2O3:Mn |
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| Research Abstract |
This project introduces newly developed multicomponent oxide host materials for electroluminescent phosphors. These are composed of Y_2O_3 and another binary compound such as Al_2_O3, Ga_2O_3, Gd_2O_3, In_2O_3, B_2O_3 or GeO_2. The various Mn-activated (Y_2O_3)_<1-x>-(oxide)x phosphor thin films were deposited while varying the composition by r.f. magnetron sputtering, sol-gel and postannealed. The obtained electroluminescent and photoluminescent emissions from the ((Y_2O_3)_<1-x>-(oxide)x):Mn phosphor thin-film emitting layers were strongly dependent on the preparation and postannealing conditions as well as on the composition. The highest luminance and photoluminescent intensity were obtained by using a (Y_2O_3)_<1-x>-(oxide)x:Mn thin-film emitting layer prepared with an optimized composition. Both the obtained electroluminescent and photoluminescent characteristics were correlated to the crystallinity of the thin-film emitting layers. High luminances above 7000 cd/m^2 were obtained in ((Y_2O_3)_<0.6>-(GeO_2)_<0.4>):Mn and ((Y_2O_3)_<0.5>-(Ga_2O_3)_<0.5>):Mn thin-film electroluminescent devices fabricated under optimal condition and driven by an ac sinusoidal wave voltage at 1 kHz.
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