| Project/Area Number |
15560164
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thermal engineering
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| Research Institution | HOKKAIDO UNIVERSITY |
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Principal Investigator |
KIKUTA Kazushige Hokkaido Univ., Grad.School of Eng., Inst., 大学院・工学研究科, 助手 (90214741)
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| Co-Investigator(Kenkyū-buntansha) |
CHIKAHISA Takemi Hokkaido Univ., Grad.School of Eng., Prof., 大学院・工学研究科, 教授 (00155300)
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| Project Period (FY) |
2003 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 2004: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 2003: ¥2,200,000 (Direct Cost: ¥2,200,000)
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| Keywords | CVD / Silicon Wafer / Gas Flow / Visualization / Thermal Radiative Properties / Thin Film / LPCVD / Rarefied Gas |
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| Research Abstract |
This investigation showed the flow characteristics of reactant gas on the silicon wafers in a vertical LPCVD (Low-Pressure Chemical Vapor Deposition) reactor by the flow visualization and the numerical simulation. The observation was made in a model reactor in a very low-pressure condition, which makes observation quite difficult because of tracer seeding. The CFD code FLUENT was used for the numerical simulation. The results of the visualization and the numerical simulation showed that the gas flow was quite viscous and it received large resistance force from the wafers and the supporting lodes. Regardless of the low-pressure condition, the flow can be treated as continuous system and can be simulated well by the CFD code based on Navier-Stokes equation. It shows that the most of the field appeared to be laminar. For the establishment of the uniform flow pattern, twin counter-flow nozzles were better than a single nozzle. The flow was free form stagnant flow or re-circulating flow so that it appears to be suited for the prevention of particle formations.
On the other hand, there is seldom data on the thermal radiative properties of semiconductor silicon wafers with various thin films. It is important to know them for the accurate measurement of wafer temperature using radiative thermometer and the estimation of the film thickness at in-situ. We measured the spectral normal emissivity of silicon wafers with various films using FT-IR without changing the condition of a thin film at 600℃ and 900℃. The result showed that radiation characteristics greatly differ by film kind and film thickness. It seems to be able to the estimation of the thin film thickness in the process by measuring the infrared spectrum at in-situ using this property.
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