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Formation of luminescent centers in GaN powders by the two-stage vapor phase synthesis and their phosphor application

Research Project

Project/Area Number 15560270
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTokyo Institute of Technology

Principal Investigator

HARA Kazuhiko  Tokyo Institute of Technology, Graduate School of Science and Engineering, Associate Professor, 大学院・理工学研究科, 助教授 (80202266)

Project Period (FY) 2003 – 2004
Project Status Completed (Fiscal Year 2004)
Budget Amount *help
¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2004: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 2003: ¥3,200,000 (Direct Cost: ¥3,200,000)
KeywordsGallium nitride / Powder / Vapor phase synthesis / Phosphor / Photoluminescence / Luminescent center / Impurity doping
Research Abstract

1.The characterization of undoped GaN powders on the constituent of gases, GaCl,NH_3 and H_2, and their partial pressures at the stage of particle growth was carried out systematically. Based on these results, the dramatic improvement in the luminescent property of the samples has been achieved.
2.The synthesis of GaN:Zn powders by the two-stage vapor phase method, in which a ZnS powder was used as a source for the stage of particle growth. The supply rate of ZnS was controlled by choice of carrier gas (N_2 or HCl) and their flow rate, which enabled the extensive control of Zn concentration between 1×10^<19>〜8×10^<20> cm^<-3>. It was found that S of almost the same concentration as Zn was also incorporated in the samples.
3.The synthesized GaN:Zn powder showed blue photomminescence and cathodeluminescence. The spectra consisted of a broad emission band located around 450 nm. The emission was characterized systematically on the Zn concentration.
4.It was found that the luminescence from the GaN:Zn powder is dependent strongly on the partial pressure of NH_3 at the stage of particle growth. The emission intensity increased with increasing the partial pressure in the region up to 0.78 atm.
5.The dramatic improvement in the luminescence and crystalline properties has been achieved by using Zn metal as a source instead of ZnS, which suggests that the incorporation of S has a negative effect on the quality of samples.

Report

(3 results)
  • 2004 Annual Research Report   Final Research Report Summary
  • 2003 Annual Research Report
  • Research Products

    (3 results)

All 2004 Other

All Journal Article (2 results) Publications (1 results)

  • [Journal Article] 二段階気相法によるGaN粉体の合成と発光中心不純物の添加2004

    • Author(s)
      原 和彦
    • Journal Title

      応用物理 73

      Pages: 373-377

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Synthesis of GaN powder and doping with luminescent impurities by the two-stage vapor-phase method2004

    • Author(s)
      Kazuhiko Hara
    • Journal Title

      Oyo Butsuri(in Japanese) 73-3

      Pages: 373-377

    • NAID

      10012703245

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Publications] 原 和彦: "二段階気相法によるGaN粉体の合成と発光中心不純物の添加"応用物理. 73・3. 373-377 (2004)

    • Related Report
      2003 Annual Research Report

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Published: 2003-04-01   Modified: 2016-04-21  

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