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Visible electroluminescence device by MOS structure with Si-implanted SiO_2

Research Project

Project/Area Number 15560280
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionToyama Prefectural University

Principal Investigator

MATSUDA Toshihiro  Toyama Prefectural University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (70326073)

Co-Investigator(Kenkyū-buntansha) IWATA Hideyuki  Toyama Prefectural University, Faculty of Engineering, Assistant Professor, 工学部, 助手 (80223402)
OHZONE Takashi  Okayama Prefectural University, Faculty of Engineering, Professor, 情報工学部, 教授 (60223822)
IWATSUBO Satoshi  Toyama Industrial Technology Center, Senior Researcher, 主任研究員
Project Period (FY) 2003 – 2004
Project Status Completed (Fiscal Year 2004)
Budget Amount *help
¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2004: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 2003: ¥1,200,000 (Direct Cost: ¥1,200,000)
KeywordsIon implantation / MOS capacitor / Lieht emission / Electroluminescence / Ion beam sputtering / Transparent electrode
Research Abstract

Microdisplays become important in imaging, consumer, entertainment and data-graphic applications, such as camera viewfinders, head-mounted displays. A superior process compatibility with Si LSI makes Si-based light emitting devices attractive for the integrated intelligent displays in portable systems. Electroluminescence (EL) spectra under direct-current (dc) operation were studied for MOS capacitors with 50 nm Si-implanted SiO_2.
The dc-EL intensity became about 50-70 times larger than the unimplanted MOS capacitor at the same current levels. Hysteresis curves in capacitance vs. gate voltage (C-V) characteristics were also observed for Si implanted capacitors. It suggests that the traps generated by Si-implantation cause the light emission. The ac-EL intensity was enhanced as the pulse frequency became higher in the frequency range from 10 Hz to 100 kHz. The longer components of the spectra were dominant.
EL spectra under direct-current (dc) operation are reported for Au/SiO_2/p-Si MOS capacitors with 50 nm Si-implanted SiO_2. The Au film of 15 nm thick is transparent at 300 nm or longer wavelength and has the resistivity of 3 μΩcm. The transparent Au gate not only improves measurable wavelength range but also suppresses interference effects among MOS layers. The clear and smooth EL spectra were measured and the blue light emission was observed. The EL spectrum was analyzed by fitting five Gaussian distribution functions, i.e. hv=1.2, 1.6, 1.9, 2.4, 2.8 eV. These energy levels are related to the traps in Si-implanted SiO_2 A model of EL emission mechanism is proposed for the Si-implanted MOS EL device.

Report

(3 results)
  • 2004 Annual Research Report   Final Research Report Summary
  • 2003 Annual Research Report
  • Research Products

    (11 results)

All 2004 2003 2002 2001 Other

All Journal Article (10 results) Publications (1 results)

  • [Journal Article] Blue electroluminescence from MOS capacitors with Si-implanted SiO_22004

    • Author(s)
      T.Matsuda
    • Journal Title

      Solid-State Electronics 48-10・11

      Pages: 1933-1941

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Effect of Recoiled Oxygen on Characteristics of ITO Films Deposited by Ion Beam Sputtering2004

    • Author(s)
      S.Iwatsubo
    • Journal Title

      Transactions of the Materials Research Society of Japan 29-4

      Pages: 1483-1486

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Blue Electroluminescence from MOS Capacitors with Si-Implanted SiO_22004

    • Author(s)
      Matsuda, T.
    • Journal Title

      Solid-State Electronics 48-10・11

      Pages: 1933-1941

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Effect of Recoiled Oxygen on Characteristics of ITO Films Deposited by Ion Beam Sputtering2004

    • Author(s)
      Iwatsubo, S.
    • Journal Title

      Transactions of the Materials Research Society of Japan 29-4

      Pages: 1483-1486

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Blue Electroluminescence from MOS Capacitors with Si-Implanted SiO_22003

    • Author(s)
      T.Matsuda
    • Journal Title

      Proc. International Semiconductor Device Research Symposium

      Pages: 94-95

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Blue Electroluminescence from MOS Capacitors with Si-Implanted SiO_22003

    • Author(s)
      Matsuda, T.
    • Journal Title

      Proc. International Semiconductor Device Research Symposium

      Pages: 94-95

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Visible electroluminescence from MOS capacitors with Si-implanted SiO_22002

    • Author(s)
      T.Matsuda
    • Journal Title

      IEICE Transactions on Electronics E85-C

      Pages: 1895-1904

    • NAID

      110003223390

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Visible electroluminescence from MOS capacitors with Si-implanted SiO_22002

    • Author(s)
      Matsuda, T.
    • Journal Title

      IEICE Transactions on Electronics E85-C

      Pages: 1985-1904

    • NAID

      110003223390

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Visible electroluminescence from MOS capacitors with Si-implanted SiO_2 under dynamic operation2001

    • Author(s)
      T.Matsuda
    • Journal Title

      IEEE International Electron Devices Meeting (IEDM) Tech.Dig.

      Pages: 167-170

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Visible electroluminescence from MOS capacitors with Si-implanted SiO_2 under dynamic operation2001

    • Author(s)
      Matsuda, T.
    • Journal Title

      IEEE International Electron Devices Meeting (IEDM) Tech. Dig.

      Pages: 167-170

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Publications] T.Matsuda, M.Kawabe K.Nishihara, H.Iwata, S.Iwatsubo, T.Ohzone: "Blue Electroluminescence from MOS Capacitors with Si-Implanted SiO_2"Proc.International Semiconductor Device Research Symposium. 94-95 (2003)

    • Related Report
      2003 Annual Research Report

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Published: 2003-04-01   Modified: 2016-04-21  

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