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Studies on effects of pulse-light irradiation on InGaAsN crystal growth for super high efficiency solar cells

Research Project

Project/Area Number 15560283
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTOYOTA TECHNOLOGICAL INSTITUTE

Principal Investigator

OHSHITA Yoshio  Toyota Technological Institute, Graduate of engineering, ASSOCIATE PROFESSOR, 大学院・工学研究科, 助教授 (10329849)

Project Period (FY) 2003 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2005: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2004: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2003: ¥2,300,000 (Direct Cost: ¥2,300,000)
KeywordsCVD / SOLAR CELL / COMPOUND SEMICONDUCTOR
Research Abstract

III-V compound multi-junction (MJ) tandem solar cells have attracted a considerable attention in space and terrestrial applications due to the great potential for obtaining high conversion efficiency. The group-III arsenide nitride compound InGaAsN thin film is one of the candidates for the future solar cells, because it has a lattice constant matched with that of substrate Ge and has 1.0 eV band gap. To realize the good InGaAsN film, we have been developing chemical beam epitaxy (CBE) technique. In this work, to improve the electrical properties of the grown film, that is, to control the N concentration and to reduce the impurity concentration, we studied the effects of light irradiation during the growth on the film properties. First, we developed the new CBE system, where the pulse light can irradiate the growing surface at the same period of the source gas supply. The N concentration in the grown film was increased and the C concentration was decreased by the light irradiation to the growing surface. These results suggested the possibilities of the control of surface reactions by the light irradiation.

Report

(4 results)
  • 2005 Annual Research Report   Final Research Report Summary
  • 2004 Annual Research Report
  • 2003 Annual Research Report
  • Research Products

    (3 results)

All 2005

All Journal Article (3 results)

  • [Journal Article] Light illumination induced effects on GaAsN thin films grown by chemical beam epitaxy.2005

    • Author(s)
      H.S.Lee
    • Journal Title

      Proceedings of 2005 Dry Process International Symposium

      Pages: 331-331

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Annual Research Report 2005 Final Research Report Summary
  • [Journal Article] 「研究成果報告書概要(欧文)」より2005

    • Author(s)
      H.S.Lee
    • Journal Title

      Proceedings of 2005 Dry Process International Symposium

      Pages: 331-331

    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Chemical beam epitaxy of InGaAsN films for multi-junction tandem solar cells2005

    • Author(s)
      H.S.Lee, et al.
    • Journal Title

      Journal of Crystal Growth 275

      Pages: 1127-1130

    • Related Report
      2004 Annual Research Report

URL: 

Published: 2003-04-01   Modified: 2016-04-21  

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