| Project/Area Number |
15560290
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | SAITAMA UNIVERSITY |
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Principal Investigator |
YAJI Tamaki SAITAMA UNIVERSITY, FUCULTY OF ENGINIEERING, PROFESSOR, 工学部, 教授 (50166493)
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| Co-Investigator(Kenkyū-buntansha) |
UTIDA Hidekazu SAITAMA UNIVERSITY, FUCULTY OF ENGINIEERING, PROFESSOR, 工学部, 助教授 (60223559)
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| Project Period (FY) |
2003 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2004: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2003: ¥2,100,000 (Direct Cost: ¥2,100,000)
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| Keywords | ULTRAVIOLET RADIATION / SENSOR / GaAlN / MOCVD |
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| Research Abstract |
The micro ultraviolet radiation sensor using Ga_XAl_<1-X>N crystal thin films was designed. The sensor was fabricated and the performance was evaluated. Evaluating characteristics and the results are as follows. Ga_XAl_<1-X>N crystal thin films were grown by MOCVD on sapphire substrates. The composition, the crystallinity and the spectral characteristic of the films were measured. The growth condition of the film was decided by the results. The properties of spectral transmittance and of spectral responsivity were measured on the Ga_XAl_<1-X>N films. From the results, the compositions and the film thickness of the Ga_XxAl_<1-X>N films used in the sensor were decided. Micro ultraviolet radiation sensor with the multi-layer film structure was designed and was fabricated. The spectral responsivity of the sensor was caribrated by the standard detector on the spectral responsivity. It was confirmed that the sensor operated as UV-A, UV-B and UV-C sensor.
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