| Project/Area Number |
15560652
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Properties in chemical engineering process/Transfer operation/Unit operation
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| Research Institution | Shizuoka University |
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Principal Investigator |
OKANO Yasunori Shizuoka University, Faculty of Engineering, Dept.of Materials Science & Chem.Eng., Professor, 工学部, 教授 (90204007)
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| Project Period (FY) |
2003 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥3,100,000 (Direct Cost: ¥3,100,000)
Fiscal Year 2004: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 2003: ¥1,700,000 (Direct Cost: ¥1,700,000)
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| Keywords | Crystal Growth / Electrical Field / Convection / Heat Transfer / Mass Transfer / Semiconductor |
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| Research Abstract |
Crystal growth by Liquid Phase Electroepitaxy was studied numerically and experimentally. Continuity, Navier-Stokes, Energy equations and Mass transfer equation considering electro-migration were descritized by control volume method and solved by SIMPLE technique. Numerical results show that substrate temperature is decreased by Peltie effect caused by electric application and natural convection is caused by the temperature distribution even if the system temperature was kept constant. In order to suppress the natural convection, magnetic field application is beneficial. However, holes are observed under strong magnetic fields. Therefore, effect of rotation, which has similar effect on suppression of convection to the magnetic field, on the liquid convection was investigated. Convection in the liquid was suppressed by Coliori force caused by rotation and concentration gradient near the growth interface must be steep because high density materials will be removed by centrifugal force. As the results, it can be expected that crystal growth rate becomes higher by applying rotation.
In the experiments, it was shown that Si, GaAs substrates reacted with liquid and it was concluded that CdTe substrate is required. CdTe crystal with 23 μm thickness was successfully grown on the CdTe substrate. Effect of growth temperature on the crystal quality was also investigated.
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