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シリコン表面ナノホールをテンプレートとしたナノ構造の作製とその光学特性の評価

Research Project

Project/Area Number 15681006
Research Category

Grant-in-Aid for Young Scientists (A)

Allocation TypeSingle-year Grants
Research Field Nanomaterials/Nanobioscience
Research InstitutionOsaka University

Principal Investigator

大野 裕  大阪大学, 大学院・理学研究科, 助手 (80243129)

Project Period (FY) 2003 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥14,040,000 (Direct Cost: ¥10,800,000、Indirect Cost: ¥3,240,000)
Fiscal Year 2005: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2004: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2003: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000)
Keywords表面ナノホール / シリコン / 表面拡散 / 透過電子顕微鏡 / カソードルミネッセンス / 偏光 / ナノ構造 / 表面ラフネス / ラフネス依存表面拡散 / 金ナノ粒子 / シリコン表面 / 表面ナノ構造 / シリコン表面ナノホール / ナノ結晶成長 / 表面・界面ナノ構造
Research Abstract

電子線照射によって薄膜表面上の任意の領域に形成できるナノメーターサイズのくぼみの集合(表面ラフネス)を核形成のための鋳型(テンプレート)とする位置制御された表面ナノ構造の形成に関し、その形成機構を精密解析した。また、形成されたナノ構造の光学特性を調べるための測定法を開発した。
電子線の照射量に依存する表面ラフネスが存在するシリコン表面上に金原子を蒸着し、熱処理して金微粒子を形成したのちその空間分布と個々のサイズを調べた。解析より、表面ラフネスに依存する拡散係数および吸着係数の兼ね合いで金微粒子の空間分布とサイズが変化する、とする独自の理論で実験結果がよく説明できた(K.Torigoe, Y.Ohno, T.Ichihashi and S.Takeda, Inst.Phys.Conf.Ser.,in press)。当初計画していたくぼみの内部への金原子の充填は本研究手法では原理的に無理であることが明らかになったが、電子線量を調節し適当な表面ラフネスを導入すると、その表面上に選択的に金ナノ構造の集合体を形成できることを示した(K.Torigoe, Y.Ohno, T.Ichihashi, and S.Takeda, to be published in Physica B)。
ナノ構造独自の光学特性を評価するためには、高い空間分解能で光学測定することが必然である。とりわけ、内部構造や形状に依存する偏光特性の評価が重要と考え、従来より独自に開発を進めてきた、透過型電子顕微鏡内その場可視分光測定装置の改良を進めた。その手法を用いて、半導体内部に存在するナノ構造の光学特性を明らかにした(Y.Ohno, Phys.Rev.B72(2005)121307(R),Y.Ohno, Appl.Phys.Lett.87(2005)181909,etc.)。

Report

(3 results)
  • 2005 Annual Research Report
  • 2004 Annual Research Report
  • 2003 Annual Research Report
  • Research Products

    (15 results)

All 2006 2005 2004 Other

All Journal Article (12 results) Publications (3 results)

  • [Journal Article] Microstructure of a CuPt-ordered GaInP alloy revealed by cross-sectional scanning tunneling microscopy2006

    • Author(s)
      Y.Ohno
    • Journal Title

      Japanese Journal of Applied Physics 45(印刷中)

      Pages: 1-4

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Dynamics of Au Adatoms on Electron-Irradiated Rough Si Surfaces2006

    • Author(s)
      K.Torigoe, Y.Ohno, T.Ichihashi, S.Takeda
    • Journal Title

      Institute of Physics Conference Series (印刷中)

      Pages: 1-4

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Growth process of gold nanoparticles on rough Si surfaces2006

    • Author(s)
      K.Torigoe, Y.Ohno, T.Ichihashi, S.Takeda
    • Journal Title

      Physica B (印刷中)

      Pages: 1-4

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Localized energy levels associated with dislocations in ZnSe revealed by polarized CL spectroscopy under light illumination2006

    • Author(s)
      Y.Ohno
    • Journal Title

      Institute of Physics Conference Series (印刷中)

      Pages: 1-4

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Electronic properties of antiphase boundaries in CuPt-ordered GaInP alloys2006

    • Author(s)
      Y.Ohno
    • Journal Title

      Physica B (印刷中)

      Pages: 1-4

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Atomistic structure of spontaneously-ordered GaInP alloy revealed by cross-sectional scanning tunneling microscopy and polarized cathodoluminescence spectroscopy2006

    • Author(s)
      Y.Ohno
    • Journal Title

      Institute of Physics Conference Series (印刷中)

      Pages: 1-4

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Photo-induced stress in a ZnSe/GaAs epilayer containing 90°α partial dislocations2005

    • Author(s)
      Y.Ohno
    • Journal Title

      Applied Physics Letters 87

    • NAID

      120002337918

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Polarized light emission from antiphase boundaries acting as slanting quantum wells in GaP/InP short-period superlattices2005

    • Author(s)
      Y.Ohno
    • Journal Title

      Physical Review B 72

    • NAID

      120003780690

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Fe-catalytic growth of ZnSe nanowires on a ZnSe(001) surface at low temperatures by molecular beam epitaxy2005

    • Author(s)
      Y.Ohno, T.Shirahama, S.Takeda, A.Ishizumi, Y.Kanemitsu
    • Journal Title

      Applied Physics Letters 87

    • NAID

      120002337920

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Growth of silicon nanowires on H-terminated Si{111} surface templates studies by transmission electron microscopy.2005

    • Author(s)
      N.Ozaki
    • Journal Title

      Proceedings of International Symposium on the Creation of Novel Nanomaterials 2004 (in press)

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Formation of silicon/silicide/oxide nanochains and their properties studied by electron holography.2004

    • Author(s)
      H.Kohno
    • Journal Title

      Thin Solid Films 464-465C

      Pages: 204-207

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Formation and properties of silicon/silicide/oxide nanochains.2004

    • Author(s)
      H.Kohno
    • Journal Title

      Proceedings of Materials Research Society Symposium 789

    • Related Report
      2004 Annual Research Report
  • [Publications] Y.Ohno, N.Adachi, S.Takeda: "Origin of a pair of stacking faults in pseudomorphic ZnSe epitaxial layers on GaAs."Applied Physics Letters. 83(1). 54-56 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Y.Ohno, S.Takeda: "Quantitative analysis of linear polarization by means of polarized cathodoluminescence spectroscopy in a TEM."Institute of. Physics Conference Series.. in press. (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Y.Ohno, N.Adachi, T.Shirahama, S.Takeda: "Formation mechanism of the pairs of stacking faults in pseudomorphic ZnSe epilayers on GaAs."Institute of. Physics Conference Series.. in press. (2003)

    • Related Report
      2003 Annual Research Report

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Published: 2003-04-01   Modified: 2016-04-21  

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