| Budget Amount *help |
¥42,380,000 (Direct Cost: ¥32,600,000、Indirect Cost: ¥9,780,000)
Fiscal Year 2017: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2016: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
Fiscal Year 2015: ¥25,090,000 (Direct Cost: ¥19,300,000、Indirect Cost: ¥5,790,000)
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| Outline of Final Research Achievements |
The valence band energy of a nanocrsytalline Si layer shows a downward shift with the surface structure chemical transfer treatment time, and the energy shift reaches ~0.4eV at maximum. The conduction band energy, on the other hand, is shifted upward by ~0.2eV at maximum. The conduction band of the nanocrystalline Si layer after formation of pn-junction is almost flat. These results show that the nanocrystalline Si layer possesses the grade band-gap structure, leading to effective separation of photo-generated electron hole pairs in the nanocrystalline Si layer, and thus preventing surface recombination.
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