| Project/Area Number |
15H02019
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Crystal engineering
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| Research Institution | Meijo University |
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Principal Investigator |
Iwaya Motoaki 名城大学, 理工学部, 准教授 (40367735)
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| Co-Investigator(Kenkyū-buntansha) |
上山 智 名城大学, 理工学部, 教授 (10340291)
松本 貴裕 名古屋市立大学, 大学院芸術工学研究科, 教授 (10422742)
竹内 哲也 名城大学, 理工学部, 教授 (10583817)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥42,380,000 (Direct Cost: ¥32,600,000、Indirect Cost: ¥9,780,000)
Fiscal Year 2017: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
Fiscal Year 2016: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
Fiscal Year 2015: ¥25,480,000 (Direct Cost: ¥19,600,000、Indirect Cost: ¥5,880,000)
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| Keywords | 窒化物半導体 / レーザ / 電子線励起 / 電子線 / 窒化ガリウム / 窒化アルミニウム / 光共振器 / ウェットエッチング / 低閾値 / 光強度 / 結晶成長 / 半導体物性 / 高性能レーザー / 紫外 / キャリア注入 / 紫外線レーザ / AlGaN / 窒化アルミニウムガリウム / 紫外レーザ |
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| Outline of Final Research Achievements |
In this research project, we aimed at realization of AlGaN-based ultraviolet laser by electron beam excitation which have widely applied fields such as medical, biotechnology and microfabrication. Since there is no device incorporating a laser emittable electron beam source, we started with the development of the device, and revealed that there is a problem peculiar to the electron beam excitation by utilizing an electron beam simulators. Furthermore, by utilizing a device simulator, the optimum structure was clarified and finally AlGaN electron beam excited laser was realized.
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