Electron beam excited nitride-based UV laser
| Project/Area Number |
15H02019
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Crystal engineering
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| Research Institution | Meijo University |
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Principal Investigator |
Iwaya Motoaki 名城大学, 理工学部, 准教授 (40367735)
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| Co-Investigator(Kenkyū-buntansha) |
上山 智 名城大学, 理工学部, 教授 (10340291)
松本 貴裕 名古屋市立大学, 大学院芸術工学研究科, 教授 (10422742)
竹内 哲也 名城大学, 理工学部, 教授 (10583817)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥42,380,000 (Direct Cost: ¥32,600,000、Indirect Cost: ¥9,780,000)
Fiscal Year 2017: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
Fiscal Year 2016: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
Fiscal Year 2015: ¥25,480,000 (Direct Cost: ¥19,600,000、Indirect Cost: ¥5,880,000)
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| Keywords | 窒化物半導体 / レーザ / 電子線励起 / 電子線 / 窒化ガリウム / 窒化アルミニウム / 光共振器 / ウェットエッチング / 低閾値 / 光強度 / 結晶成長 / 半導体物性 / 高性能レーザー / 紫外 / キャリア注入 / 紫外線レーザ / AlGaN / 窒化アルミニウムガリウム / 紫外レーザ |
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| Outline of Final Research Achievements |
In this research project, we aimed at realization of AlGaN-based ultraviolet laser by electron beam excitation which have widely applied fields such as medical, biotechnology and microfabrication. Since there is no device incorporating a laser emittable electron beam source, we started with the development of the device, and revealed that there is a problem peculiar to the electron beam excitation by utilizing an electron beam simulators. Furthermore, by utilizing a device simulator, the optimum structure was clarified and finally AlGaN electron beam excited laser was realized.
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Report
(4 results)
Research Products
(120 results)
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[Journal Article] GaInN-based tunnel junctions with graded layers2016
Author(s)
Daiki Takasuga, Yasuto Akatsuka, Masataka Ino, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
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Journal Title
Applied Physics Express
Volume: 9
Issue: 8
Pages: 081005-081005
DOI
NAID
Related Report
Peer Reviewed / Acknowledgement Compliant
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[Journal Article] Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors2016
Author(s)
Kazuki Ikeyama, Yugo Kozuka, Kenjo Matsui, Shotaro Yoshida, Takanobu Akagi, Yasuto Akatsuka, Norikatsu Koide, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
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Journal Title
Applied Physics Express
Volume: 9
Issue: 10
Pages: 102101-102101
DOI
NAID
Related Report
Peer Reviewed / Open Access / Acknowledgement Compliant
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[Presentation] Demonstration of AlGaN/GaN UV lasers by electron beam pumping2017
Author(s)
Motoaki Iwaya, Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
Organizer
Workshop on Frontier Photonic and Electronic Materials and Devices
Place of Presentation
Mallorca, Spain
Year and Date
2017-03-05
Related Report
Int'l Joint Research / Invited
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[Presentation] Electron beam excitation of ultraviolet laser using a GaN/AlGaN multi quantum well active layer2017
Author(s)
Takafumi Hayashi, Lin Dong, Yuta Kawase, Noriaki Nagata, Takashi Senga, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
Organizer
The 8th Asia-Pacific Workshop on Widegap Semiconductors
Related Report
Int'l Joint Research
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[Presentation] 3-mW RT-CW GaN-Based VCSELs and Their Temperature Dependence2016
Author(s)
Kenjo Matsui, Takashi Furuta, Natsumi Hayashi, Yugo Kozuka, Takanobu Akagi, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya and Isamu Akasaki,
Organizer
International Workshop on Nitride Semiconductors (IWN 2016)
Place of Presentation
Florida, USA
Year and Date
2016-10-02
Related Report
Int'l Joint Research
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[Presentation] Determination of the Site of Sb Occupation in MOCVD-Grown GaN1xSbx Using X-Ray Absorption Fine-Structure Measurements2016
Author(s)
Takao Miyajima, Daisuke Komori, Toshiaki Ina, Ryoma Seiki, Kiyofumi Nitta, Tetsuya Takeuchi, Tomoya Uruga, Satoshi Kamiyama, Motoaki Iwaya and Isamu Akasaki,
Organizer
International Workshop on Nitride Semiconductors (IWN 2016)
Place of Presentation
Florida, USA
Year and Date
2016-10-02
Related Report
Int'l Joint Research
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[Presentation] GaN-based VCSELs using Periodic Gain Structures2016
Author(s)
K. Matsui, K. Ikeyama, T. Furuta, Y. Kozuka, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
Organizer
The 4th International Conference on Light- Emitting Devices and Their Industrial Applications
Place of Presentation
Yokohama/Japan
Year and Date
2016-05-18
Related Report
Int'l Joint Research
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[Presentation] ITO/Ga2O3 Multilayer Electrodes Towards Deep UV-LEDs2016
Author(s)
N. Kuwabara, T. Yasuda, S. Katsuno, N. Koide, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki,
Organizer
The 4th International Conference on Light- Emitting Devices and Their Industrial Applications
Place of Presentation
Yokohama/Japan
Year and Date
2016-05-18
Related Report
Int'l Joint Research
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[Presentation] AlGaN-based UV-LEDs with polarization engineering2015
Author(s)
Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
Organizer
14th Akasaki Research Center Symposium
Place of Presentation
Nagoya/Japan
Year and Date
2015-11-20
Related Report
Int'l Joint Research
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[Presentation] Nitride-Based Tunnel Junctions towards DeepUV-LEDs2015
Author(s)
D. Takasuka, D. Minamikawa, M. Ino, T. Takeuchi, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
Organizer
The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications '15
Place of Presentation
Yokohama/Japan
Year and Date
2015-05-23
Related Report
Int'l Joint Research
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