| Budget Amount *help |
¥42,640,000 (Direct Cost: ¥32,800,000、Indirect Cost: ¥9,840,000)
Fiscal Year 2018: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2017: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2016: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2015: ¥25,090,000 (Direct Cost: ¥19,300,000、Indirect Cost: ¥5,790,000)
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| Outline of Final Research Achievements |
In this research project, we aim to develop the functional interface based on oxide heterostructures especially for superior electrical conduction. One research target is a perovskite BaSnO3 heterostructure. Interface engineering with (Sr,Ba)SnO3/BaSnO3 improves electrical conduction and performance of field-effect operation at the interface. Other target is a LiNbO3-type stannates. LiNbO3-type ASnO3 thin films (A = Mg, Mn, Zn) are firstly synthesized by pulsed-laser deposition or molecular-beam epitaxy technique. By applying these films to the channel in field-effect transistors (FET), electrical conduction is well controlled electrostatically. Moreover, the threshold voltage in the FET operation depends crystalline direction, demonstrating the formation of polar interface based on the LiNbO3 structure. We expect that the interface engineering in this study corroborates a new functionality of electrical conduction combining with polarization at the interfaces.
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