| Project/Area Number |
15H02292
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
ITOH MITSURU 東京工業大学, 科学技術創成研究院, 教授 (30151541)
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| Research Collaborator |
YASUI Shintaro 東京工業大学, 科学技術創成研究院, 助教 (40616687)
TANIYAMA Tomoyasu 東京工業大学, 科学技術創成研究院, 准教授 (10302960)
HAMASAKI Yosuke 防衛大学校, 助教
MORIWAKE Hiroki 日本ファインセラミックスセンター, 主幹研究員 (40450853)
KATAYAMA Tsukasa 東京大学, 理学部化学科, 助教 (50784617)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥44,720,000 (Direct Cost: ¥34,400,000、Indirect Cost: ¥10,320,000)
Fiscal Year 2017: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2016: ¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000)
Fiscal Year 2015: ¥19,370,000 (Direct Cost: ¥14,900,000、Indirect Cost: ¥4,470,000)
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| Keywords | 強誘電性 / 強磁性 / フェリ磁性 / 薄膜 / 電圧制御 / マルチフェロイック / マルチフェロイックス / k-アルミナ / 結晶ドメイン / 磁性 / 垂直磁化 / 電圧磁化制御 / PLD / 先端機能デバイス / セラミックス / 電子・電気材料 |
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| Outline of Final Research Achievements |
This study was conducted for the purpose of the materials design and structural design of the meultiferroelectric device in order to control of their magnetization by the external electric field. First, thin films of the materials with κ-alumina-type structure were fabricated to investigate ferroelectric and ferrimagnetic properties. Ferroelectricity was confirmed for the all the prepared films. Secondary, ScFeO3 film with YMnO3-type structure, in magnetization is aligned along the perpendicular axis of the film, was fabricated for the fist time. Perpendicular magnetization and ferroelectricity were confirmed at the room temperature. Multiferroic κ-akumina-type this films could be also prepared by the sole-gel and ALD technique.
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