| Budget Amount *help |
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2017: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2016: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
Fiscal Year 2015: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
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| Outline of Final Research Achievements |
To create function-merged devices, formation of Ge quantum dots (QDs) on a Si substrate by mediation of sub-monolayer carbon was investigated. It was confirmed that it was possible to form Ge QDs through optimization of process parameters in methods of Si surface reconstruction via C-Si reaction and C-mediated solid-phase growth. Growth modes of Ge QDs in the both methods and their formation mechanisms were clarified. Furthermore, formation of stacked Ge QDs structure was investigated, and it was confirmed that diameter and density of Ge QDs were possible to be maintained by introducing a strain-compensated spacer.
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