Realization of n-type AlN by clarifying the mechanism of point defect formation in bulk AlN crystal

• Project/Area Number: 15H03555
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Tokyo University of Agriculture and Technology
• Principal Investigator: Kumagai Yoshinao 東京農工大学, 工学(系)研究科(研究院), 卓越教授 (20313306)
• Co-Investigator(Kenkyū-buntansha): 村上 尚 東京農工大学, 工学(系)研究科(研究院), 准教授 (90401455) ; 富樫 理恵 東京農工大学, 工学(系)研究科(研究院), 助教 (50444112)
• Research Collaborator: SITAR Zlatko ; KINOSHITA Toru ; TUOMISTO Filip
• Project Period (FY): 2015-04-01 – 2018-03-31
• Project Status: Completed (Fiscal Year 2017)
• Budget Amount: ¥17,160,000 (Direct Cost: ¥13,200,000、Indirect Cost: ¥3,960,000); Fiscal Year 2017: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000); Fiscal Year 2016: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000); Fiscal Year 2015: ¥7,930,000 (Direct Cost: ¥6,100,000、Indirect Cost: ¥1,830,000)
• Keywords: 窒化アルミニウム / 点欠陥 / n形導電性 / 不純物 / ドーピング / HVPE法 / ショットキーバリアダイオード / Siドーピング / 転位 / エッチピット / 結晶工学 / エピタキシャル成長 / バルク結晶 / 導電性制御 / PVT法

Outline of Final Research Achievements

Realization of AlN substrates with n-type conductivity was investigated by high-speed growth of thick AlN layers using hydride vapor phase epitaxy (HVPE) on low-dislocation-density bulk AlN substrates prepared by physical vapor transport. Mechanism of unintentionally accumulated high concentration of Si impurity on the HVPE-AlN surface was clarified, which made it possible to eliminate the Si accumulation and investigate intentional Si doping for AlN. Control of Si concentration in AlN could be achieved by using silicon tetrachloride as a doping gas. Bulk AlN substrates with n-type conductivity were successfully prepared by the intentional Si doping. World first vertical Schottky barrier diodes fabricated using the n-type AlN substrates showed high rectification and high reverse breakdown voltage.

Research Products

• [Int'l Joint Research] North Carolina State University(U.S.A.)
• [Int'l Joint Research] Linkoping University(Sweden)
• [Int'l Joint Research] North Carolina State University(U.S.A.)
• [Int'l Joint Research] Linkoping University(Sweden)
• [Int'l Joint Research] ノースカロライナ州立大学(米国)
• [Int'l Joint Research] リンチョーピン大学(スウェーデン)
• [Journal Article] Influence of high-temperature processing on the surface properties of bulk AlN substrates (2016)
  • Author(s): S. Tojo, R. Yamamoto, R. Tanaka, Q.-T. Thieu, R. Togashi, T. Nagashima, T. Kinoshita, R. Dalmau, R. Schlesser, H. Murakami, R. Collazo, A. Koukitu, B. Monemar, Z. Sitar, Y. Kumagai
  • Journal Title: Journal of Crystal Growth Volume: 446 Pages: 33-38
  • DOI: 10.1016/j.jcrysgro.2016.04.030
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy (2015)
  • Author(s): T. Kinoshita, T. Nagashima, T. Obata, S. Takashima, R. Yamamoto, R. Togashi, Y. Kumagai, R. Schlesser, R. Collazo, A. Koukitu, and Z. Sitar
  • Journal Title: Applied Physics Express Volume: 8 Issue: 6 Pages: 0610031-3
  • DOI: 10.7567/apex.8.061003
  • NAID: 210000137521
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Presentation] Wet chemical etching of MOVPE-AlN templates for evaluation of threading dislocations (2017)
  • Author(s): Taro Mitsui, Mari Higuchi, Toru Nagashima, Toru Kinoshita, Reo Yamamoto, Bo Monemar, and Yoshinao Kumagai
  • Organizer: International Conference on Light-Emitting Devices and Their Industrial Applications ’17 (LEDIA ’17)
  • Int'l Joint Research
• [Presentation] エッチピットを用いたMOVPE AlNテンプレートの貫通転位評価 (2017)
  • Author(s): 樋口真里，三井太朗，永島徹，木下亨，山本玲緒，小西敬太，Bo Monemar，熊谷義直
  • Organizer: 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第9回ナノ構造・エピタキシャル成長講演会
• [Presentation] 高品質窒化アルミニウムのハイドライド気相成長におけるSiドープ量制御 (2017)
  • Author(s): 小西敬太，山本玲緒，富樫理恵，永島徹，木下亨，Rafael Dalmau，Raoul Schlesser，村上尚，Ramon Collazo，Bo Monemar，Zlatko Sitar，熊谷義直
  • Organizer: 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第9回ナノ構造・エピタキシャル成長講演会
• [Presentation] エッチピットを用いたHVPE-AlN基板の貫通転位評価 (2017)
  • Author(s): 樋口真里，三井太朗，永島徹，山本玲緒，小西敬太，Galia Pozina，Rafael Dalmau，Raoul Schlesser，Ramon Collazo，Bo Monemar，Zlatko Sitar，熊谷義直
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] 高温AlN-HVPEにおける系内酸素がSiドープ量に与える影響 (2017)
  • Author(s): 小西敬太，山本玲緒，富樫理恵，永島徹，木下亨，Rafael Dalmau，Raoul Schlesser，村上尚，Ramon Collazo，Bo Monemar，Zlatko Sitar，熊谷義直
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] Development of bulk AlN substrates for deep-UV optoelectronic devices by HVPE method (2017)
  • Author(s): Yoshinao Kumagai, Rie Togashi, Toru Nagashima, Toru Kinoshita, Reo Yamamoto, Rafael Dalmau, Raoul Schlesser, Hisashi Murakami, Ramon Collazo, Akinori Koukitu, Bo Monemar, and Zlatko Sitar
  • Organizer: 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
  • Int'l Joint Research / Invited
• [Presentation] Influence of ambient oxygen on Si incorporation during hydride vapor phase epitaxy of AlN at high temperature (2017)
  • Author(s): Keita Konishi, Reo Yamamoto, Rie Togashi, Toru Nagashima, Rafael Dalmau, Raoul Schlesser, Hisashi Murakami, Ramon Collazo, Bo Monemar, Zlatko Sitar, and Yoshinao Kumagai
  • Organizer: 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
  • Int'l Joint Research
• [Presentation] Characterization of threading dislocations in HVPE-grown AlN substrates by wet chemical etching (2017)
  • Author(s): Taro Mitsui, Mari Higuchi, Toru Nagashima, Toru Kinoshita, Reo Yamamoto, Galia Pozina, Rafael Dalmau, Raoul Schlesser, Ramon Collazo, Bo Monemar, Zlatko Sitar, and Yoshinao Kumagai
  • Organizer: 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
  • Int'l Joint Research
• [Presentation] Preparation of bulk AlN substrates by hydride vapor phase epitaxy (2017)
  • Author(s): Yoshinao Kumagai
  • Organizer: International Workshop on UV Materials and Devices 2017 (IWUMD 2017)
  • Int'l Joint Research / Invited
• [Presentation] Defect selective etching of MOVPE grown AlN and HVPE grown bulk AlN substrates in a molten KOH/NaOH eutectic (2017)
  • Author(s): Mari Higuchi, Taro Mitsui, Toru Nagashima, Reo Yamamoto, Keita Konishi, Galia Pozina, Rafael Dalmau, Raoul Schlesser, Ramon Collazo, Bo Monemar, Zlatko Sitar, and Yoshinao Kumagai
  • Organizer: International Workshop on UV Materials and Devices 2017 (IWUMD 2017)
  • Int'l Joint Research
• [Presentation] HVPE法AlN単結晶基板表面のSi蓄積の原因調査および制御の検討 (2016)
  • Author(s): 佐藤圭介，寺尾真人，三井太朗，山本玲緒，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，纐纈明伯，Bo Monemar，Zlatko Sitar，熊谷義直
  • Organizer: 応用物理学会結晶工学分科会第5回結晶工学未来塾
  • Place of Presentation: 東京農工大学小金井キャンパス（東京都小金井市）
  • Year and Date: 2016-11-07
• [Presentation] Recent Progress in the Growth of AlN by HVPE on Native AlN Substrates (2016)
  • Author(s): T. Kinoshita, T. Nagashima, T. Obata, R. Togashi, R. Schlesser, R. Collazo, A. Koukitu, Y. Kumagai and Z. Sitar
  • Organizer: International Workshop on Nitride Semiconductors 2016 (IWN 2016)
  • Place of Presentation: Hilton Orlando Lake Buena Vista, Orlando, FL, U.S.A.
  • Year and Date: 2016-10-04
  • Int'l Joint Research / Invited
• [Presentation] Growth of AlN substrates by hydride vapor phase epitaxy for opto-electronic devices (2016)
  • Author(s): T. Kinoshita, T. Nagashima, T. Obata, R. Togashi, Y. Kumagai, R. Schlesser, R. Collazo, A. Koukitu, Z. Sitar
  • Organizer: The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
  • Place of Presentation: Nagoya Congress Center（愛知県名古屋市熱田区）
  • Year and Date: 2016-08-10
  • Int'l Joint Research / Invited
• [Presentation] HVPE法によるn形AlNバルク基板作製の検討 (2016)
  • Author(s): 熊谷義直，富樫理恵，山本玲緒，永島徹，木下亨，村上尚，Monemar Bo，纐纈明伯
  • Organizer: 応用物理学会結晶工学分科会第145回研究会
  • Place of Presentation: 名古屋大学東山キャンパス（愛知県名古屋市千種区）
  • Year and Date: 2016-06-03
  • Invited
• [Presentation] Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy (2015)
  • Author(s): R. Yamamoto, T. Kinoshita, T. Nagashima, T. Obata, S. Takashima, R. Togashi, Y. Kumagai, R. Schlesser, R. Collazo, A. Koukitu, and Z. Sitar
  • Organizer: The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
  • Place of Presentation: Act City Hamamatsu（静岡県浜松市）
  • Year and Date: 2015-11-10
  • Int'l Joint Research
• [Presentation] Properties of point defects in AlN and high Al content AlGaN (2015)
  • Author(s): Benjamin E. Gaddy, Zachary Bryan, Isaac Bryan, Joshua S. Harris, Kelsey J. Mirrielees, Brian D. Behrhorst, Jonathon N. Baker, Ronny Kirste, Toru Kinoshita, Yoshinao Kumagai, Akinori Koukitu, Ramon Collazo, Zlatko Sitar, Douglas L. Irving
  • Organizer: The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
  • Place of Presentation: Act City Hamamatsu（静岡県浜松市）
  • Year and Date: 2015-11-10
  • Int'l Joint Research
• [Presentation] HVPE法によるSiドープn形AlN基板作製と縦型ショットキーバリアダイオード試作への適用 (2015)
  • Author(s): 寺尾真人，山本玲緒，木下亨，永島徹，小幡俊之，高島信也，富樫理恵，村上尚，Raoul Schlesser，Ramon Collazo，纐纈明伯，Bo Monemar，Zlatko Sitar，熊谷義直
  • Organizer: 第45回結晶成長国内会議（NCCG-45）
  • Place of Presentation: 北海道大学学術交流会館（北海道札幌市）
  • Year and Date: 2015-10-20
• [Presentation] HVPE growth of AlN substrates for opto-electronic applications (2015)
  • Author(s): Toru Kinoshita, Toru Nagashima, Toshiyuki Obata, Shinya Takashima, Reo Yamamoto, Rie Togashi, Yoshinao Kumagai, Raoul Schlesser, Ramon Collazo, Akinori Koukitu, and Zlatko Sitar
  • Organizer: The 2015 E-MRS Fall Meeting and Exhibit
  • Place of Presentation: Warsaw University of Technology, Warsaw, Poland
  • Year and Date: 2015-09-16
  • Int'l Joint Research / Invited
• [Presentation] HVPE法によるn型AlN基板作製と縦型ショットキーダイオードへの適用 (2015)
  • Author(s): 山本玲緒，木下亨，永島徹，小幡俊之，高島信也，富樫理恵，熊谷義直，Raoul Schlesser，Ramon Collazo，纐纈明伯，Zlatko Sitar
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場（愛知県名古屋市）
  • Year and Date: 2015-09-13
• [Remarks] 熊谷研究室ホームページ
  • URL: http://web.tuat.ac.jp/~kumagai/