| Project/Area Number |
15H03559
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Crystal engineering
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| Research Institution | Ritsumeikan University |
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Principal Investigator |
Nanishi Yasushi 立命館大学, 理工学部, 授業担当講師 (40268157)
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| Co-Investigator(Kenkyū-buntansha) |
荒木 努 立命館大学, 理工学部, 教授 (20312126)
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| Research Collaborator |
AKASAKA Tetsuya
YAMAGUCHI Tomohiro
UEDONO Akira
SUDA Jun
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| Project Period (FY) |
2015-04-01 – 2019-03-31
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| Project Status |
Completed (Fiscal Year 2018)
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| Budget Amount *help |
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2018: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2017: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2016: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2015: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
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| Keywords | InN / InGaN / InAlN / 窒化物半導体 / 混晶組成 / MBE / 転位 / グラフィン / 極微領域評価 / 非混和性 / 非混和 / ナノ構造 / RF-MBE / 極微構造 / リーク電流 |
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| Outline of Final Research Achievements |
InGaN alloys are currently used for blue LEDs. Material properties are degraded dramatically, however, when we increase In composition to fabricate green, red and infra-red LEDs. Growth of composition-controlled higher quality InGaN with nano-structure was investigated by using newly developed DERI process, taking advantage of immiscible nature of this material system. It was found that effect of dislocation can be suppressed by growing Ga-rich wider band-gap material surrounding dislocations. On the other hand, stress from the substrate due to lattice mismatch affects alloy composition at the interface. Insertion of graphene substantially improved the quality of InN due to stress decrease
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| Academic Significance and Societal Importance of the Research Achievements |
本研究の成果は社会的には、InGaN混晶の波長利用可能領域を、青・緑色領域から、さらに、赤、赤外領域まで拡張する上で、その指針を得たことにある。一方学術的意義は、非混和性の強いInGaN, InAlN混晶の組成は、結合力差による一方の原子の優先的な固相への取り込みに加え、基板結晶との格子定数差の違いによる組成引き込み効果も重要な役割を演じていることを明らかにしたことにある。ファンデルワールス力結合によるグラフィンを基板との界面に挟むより、組成決定に対する基板からの制約を軽減できることを示したことも大きな意義と考えている。
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