| Budget Amount *help |
¥17,030,000 (Direct Cost: ¥13,100,000、Indirect Cost: ¥3,930,000)
Fiscal Year 2017: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2016: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2015: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
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| Outline of Final Research Achievements |
We have developed the technology for lowering the contact resistivity at metal/Ge interface for the application of high-mobility semiconductor material, germanium (Ge). The purpose of this research project was the clarification of the interface properties and the establishment of controlling technology of the electrical conduction properties of metal/Ge(Sn) contact for the application of novel Ge-related alloy materials; germanium-tin (GeSn) and silicon-germanium-tin (SiGeSn). As results, we have successfully demonstrated Schottky barrier height engineering by the introduction of the GeSn and SiGeSn interlayer and the formation of metal germanide epitaxial layer/Ge contacts. Also, we have achieved the formation of heavily Sb-doped Ge(Sn) epitaxial layer and demonstrate the formation of a metal/n-Ge(Sn) contact with an ultralow contact resistivity lower than 1E-8 /Ωcm^2.
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