Electric-field control of electronic phase change properties in transition-metal oxides
| Project/Area Number |
15H03567
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
Fujiwara Kohei 東北大学, 金属材料研究所, 講師 (50525855)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥17,030,000 (Direct Cost: ¥13,100,000、Indirect Cost: ¥3,930,000)
Fiscal Year 2017: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2016: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2015: ¥12,090,000 (Direct Cost: ¥9,300,000、Indirect Cost: ¥2,790,000)
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| Keywords | 電気二重層トランジスタ / 電界効果トランジスタ / 酸化物エレクトロニクス / 酸化還元 / 抵抗変化メモリー |
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| Outline of Final Research Achievements |
Electric-field control of functional properties in transition-metal oxides has been considered as a key technology for development of next-generation electronic devices. Recent studies have shown that, by using electric-double-layer transistors, properties of oxide channels can be largely modulated via field-induced redox reactions as well as electrostatic carrier accumulation induced by the strong electric field. In this project, various rutile-type oxide films have been synthesized by a reactive sputtering technique for use in electric-double-layer transistors. Also, a three-terminal device that employs a solid-state electrolyte as the gate dielectric layer has been constructed.
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Report
(4 results)
Research Products
(8 results)
