| Budget Amount *help |
¥17,030,000 (Direct Cost: ¥13,100,000、Indirect Cost: ¥3,930,000)
Fiscal Year 2017: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2016: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2015: ¥12,090,000 (Direct Cost: ¥9,300,000、Indirect Cost: ¥2,790,000)
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| Outline of Final Research Achievements |
Electric-field control of functional properties in transition-metal oxides has been considered as a key technology for development of next-generation electronic devices. Recent studies have shown that, by using electric-double-layer transistors, properties of oxide channels can be largely modulated via field-induced redox reactions as well as electrostatic carrier accumulation induced by the strong electric field. In this project, various rutile-type oxide films have been synthesized by a reactive sputtering technique for use in electric-double-layer transistors. Also, a three-terminal device that employs a solid-state electrolyte as the gate dielectric layer has been constructed.
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