| Budget Amount *help |
¥16,640,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥3,840,000)
Fiscal Year 2017: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2016: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2015: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Outline of Final Research Achievements |
In thin film transistors with amorphous indium oxide thin films as conduction channels, the effect of additive elements to suppress instability of transistor characteristics was investigated. The stability of the atomic-scale structure of the amorphous oxide thin film depends greatly on the density of oxygen vacancies. In addition, the stability of conduction is inversely proportional to the density of oxygen vacancies supplying conduction electrons. Si was added for this stabilization. It was found that additive Si with small atomic radius distorts indium host oxide and enhances the overlap of conduction electron 5 s orbit. Based on these findings, we succeeded in forming a structure with double layer composed of unstable high conductivity layer with small density Si additive and a low conductivity layer with high density Si. This new structure successfully behaves as high performance TFT.
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