Material design for oxide thin film transistor controlled by anti-doping scheme

• Project/Area Number: 15H03568
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: National Institute for Materials Science
• Principal Investigator: TSUKAGOSHI KAZUHITO 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, MANA主任研究者 (50322665)
• Research Collaborator: KIZU Takio 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, ポスドク研究員
• Project Period (FY): 2015-04-01 – 2018-03-31
• Project Status: Completed (Fiscal Year 2017)
• Budget Amount: ¥16,640,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥3,840,000); Fiscal Year 2017: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000); Fiscal Year 2016: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000); Fiscal Year 2015: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
• Keywords: 半導体物性 / 先端機能デバイス / 表面・界面物性 / 酸化膜半導体 / 酸素欠損 / ドーピング

Outline of Final Research Achievements

In thin film transistors with amorphous indium oxide thin films as conduction channels, the effect of additive elements to suppress instability of transistor characteristics was investigated. The stability of the atomic-scale structure of the amorphous oxide thin film depends greatly on the density of oxygen vacancies. In addition, the stability of conduction is inversely proportional to the density of oxygen vacancies supplying conduction electrons. Si was added for this stabilization. It was found that additive Si with small atomic radius distorts indium host oxide and enhances the overlap of conduction electron 5 s orbit. Based on these findings, we succeeded in forming a structure with double layer composed of unstable high conductivity layer with small density Si additive and a low conductivity layer with high density Si. This new structure successfully behaves as high performance TFT.

Research Products

• [Int'l Joint Research] Nanjing University(China)
• [Journal Article] 1.Radial Interference Contrast in in-situ SEM Observation of Metal Oxide Semiconductor Film Crystallization (2017)
  • Author(s): Kunji Shigeto, Takio Kizu, Kazuhito Tsukagoshi, Toshihide Nabatame,
  • Journal Title: Microscopy and Microanalysis Volume: 23 Issue: S1 Pages: 1512-1513
  • DOI: 10.1017/s1431927617008224
  • Peer Reviewed
• [Journal Article] 270.Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors (2017)
  • Author(s): X.Gao, M.-F. Lin, B.-H.Mao, M.Shimizu, N.Mitoma, T.Kizu, W.Ouyang, T.Nabatame, Z.Liu, K.Tsukagoshi, S.-D.Wang,
  • Journal Title: Journal of Physics D: Applied Physics Volume: 50 Issue: 2 Pages: 025102-025102
  • DOI: 10.1088/1361-6463/50/2/025102
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage (2016)
  • Author(s): T. Kizu, S.Aikawa, T. Nabatame, A.Fujiwara, K.Ito, M.Takahashi, K.Tsukagoshi,
  • Journal Title: Journal of Applied Physics Volume: 120 Issue: 4 Pages: 045702-045702
  • DOI: 10.1063/1.4959822
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] T.Kizu, N.Mitoma, M.Miyanaga, H.Awata, T.Nabatame, K.Tsukagoshi, (2015)
  • Author(s): Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film
  • Journal Title: Journal of Applied Physics Volume: 118 Issue: 12 Pages: 125702-125702
  • DOI: 10.1063/1.4931422
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] Nanoscale material transport for future electronics (2017)
  • Author(s): Kazuhito Tsukagoshi
  • Organizer: The 2nd Nippon-Taiwan Workshop on Innovation of Emergent Materials
  • Int'l Joint Research / Invited
• [Presentation] ALDで形成したInOx高移動度TFT (2017)
  • Author(s): 木津たきお，相川慎也，池田幸弘，上野啓司，生田目俊秀，塚越一仁
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] Silicon induced Metal Oxide thin film transistor (2017)
  • Author(s): K. Tsukagoshi, K. Kizu, S.Aikawa, T.Nabatame,
  • Organizer: The first International Semiconductor Conference for Global Challenges (ISOGC-2017)
  • Int'l Joint Research / Invited