| Budget Amount *help |
¥17,160,000 (Direct Cost: ¥13,200,000、Indirect Cost: ¥3,960,000)
Fiscal Year 2018: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2017: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2016: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2015: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
|
|---|
| Outline of Final Research Achievements |
In this research project, we have generated polarization-twisting pulses with the polarization rotation frequency in the THz regime, and investigated a local excitation effect of two-dimensional electron gas samples by illuminating the polarization shaped pulses. For this purpose, we have fabricated and characterized GaAs/AlGaAs modulation-doped quantum well Hall-bar samples and encapsulated h-BN/MoS2/h-BN heterostructure field-effect transistors. We have, for the first time, successfully observed the switching of the direction of the photovolatge depends on the envelope helicity of the polarization-twisting pulses. These observations are explained by the circular photogalvanic effect and the classical edge photocurrent generated by acceleration of free carriers in the vicinity of the sample edge by the optical electric field of the polarization-twisting pulses.
|
