| Budget Amount *help |
¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000)
Fiscal Year 2017: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2016: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Fiscal Year 2015: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
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| Outline of Final Research Achievements |
In this work, we developed a new method of the vacuum growth of Bi2Te3, which is not associated with the contamination of the chamber, and succeeded in layer-by-layer growth of good-quality Bi2Te3. We studied and clarified the correlation between the development of valence electronic structure and the electrical conductivity of the film.
We also studied the electrical conductivity of the (4x1)-In monolayer on Si surface and succeeded in the observation of the precise conductivity change during a phase transition, which enabled us to understand the detailed mechanism of the phase transition which has been under debate for decades. We also measured the temperature dependence of the conductivity of rect-In phase. The adsorption of metal phthalocyanine on the rect-In surface modified greatly the temperature coefficient of the conductivity. We also succeeded in the preparation of the √7 x √3-hex phase and found that this is the single-layer limit of the metallic In phases on Si.
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