| Project/Area Number |
15H03893
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Materials/Mechanics of materials
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| Research Institution | Kobe University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
菅野 公二 神戸大学, 工学研究科, 准教授 (20372568)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥17,030,000 (Direct Cost: ¥13,100,000、Indirect Cost: ¥3,930,000)
Fiscal Year 2017: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2016: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2015: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
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| Keywords | 実験ナノメカニクス / マルチフィジックス / 半導体ナノ細線 / シリコンカーバイド / ナノ材料 |
|---|
| Outline of Final Research Achievements |
3C-SiCNWs are one of promising piezoresistive elements used in harsh environmental MEMS/NEMS applications, because of its high dielectric breakdown strength and excellent temperature/chemical stabilities. Especially, 3C-SiCNW wrapped by SiO2 shell is directly effective for fabrication of vertical structure FETs and FET-based mechanical sensors. This research clarified mechanical properties and piezoresistivity of 3C-SiCNWs wrapped with SiO2 (core/shell silicon carbide nanowires: C/S-SiCNWs) for harsh environmental MEMS/NEMS applications, using the MEMS-based nanotensile testing device. The tensile strengths for 3C-SiCNWs without SiO2 shell, and C/S-SiCNWs showed huge values of 22.4 GPa and 7.3 GPa on average, respectively. The gauge factor of the 3C-SiCNW without SiO2 shell showed -17.2 at 0.022 ε. Thus, the C/S-SiCNW has behaved as an n-type semiconductor, and it is useful as structural materials and piezoresistive elements in harsh environmental MEMS.
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