Formation of graphene with low density of defects by plasma-assisted anneal on flat SiC(0001) surfaces
Project/Area Number |
15H03902
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Production engineering/Processing studies
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Research Institution | Osaka University |
Principal Investigator |
Arima Kenta 大阪大学, 工学研究科, 准教授 (10324807)
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Research Collaborator |
HOSOO Kohei
ITO Ryota
MINAMI Ouki
LI Shaoxian
HIRANO Tomoki
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Project Period (FY) |
2015-04-01 – 2018-03-31
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Project Status |
Completed (Fiscal Year 2017)
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Budget Amount *help |
¥16,640,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥3,840,000)
Fiscal Year 2017: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2016: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2015: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
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Keywords | グラフェン / シリコンカーバイド / プラズマ / 表面改質 / ウェットエッチング / 酸化膜 / プラズマ酸化 / SiC表面 / 構造制御 / 超平坦表面 / 生産工学 / ナノ材料 / 表面科学 / 表面 / 酸化 |
Outline of Final Research Achievements |
Graphene is a promising material for future electronic devices. Although the epitaxial growth of graphene by thermal decomposition of SiC in vacuum is familiar, the control of defects on graphene is difficult. We have developed a method to form graphene with low density of defects on a flattened SiC surface by the combined process of plasma treatment, wet etching and thermal anneal. A key in this process is the deposition of an additional carbon layer at the monolayer level on SiC by the plasma treatment. In this study, we investigate the fundamental property of surface modification of SiC by plasma as well as the effect of the carbon layer on the quality of graphene.
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Report
(4 results)
Research Products
(18 results)
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[Presentation] Pit Formation, Patterning and Flattening of Ge Surfaces in O2-Containing Water by Metal-Assisted Chemical Etching2016
Author(s)
T. Kawase, A. Mura, Y. Saito, T. Okamoto, K. Kawai, Y. Sano, K. Yamauchi, M. Morita, and K. Arima
Organizer
Pacific Rim Meeting on Electrochemical and Solid-State Science 2016
Place of Presentation
Honolulu, USA
Related Report
Int'l Joint Research
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