| Budget Amount *help |
¥16,640,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥3,840,000)
Fiscal Year 2017: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2016: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2015: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
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| Outline of Final Research Achievements |
Graphene is a promising material for future electronic devices. Although the epitaxial growth of graphene by thermal decomposition of SiC in vacuum is familiar, the control of defects on graphene is difficult. We have developed a method to form graphene with low density of defects on a flattened SiC surface by the combined process of plasma treatment, wet etching and thermal anneal. A key in this process is the deposition of an additional carbon layer at the monolayer level on SiC by the plasma treatment. In this study, we investigate the fundamental property of surface modification of SiC by plasma as well as the effect of the carbon layer on the quality of graphene.
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