| Budget Amount *help |
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2018: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2017: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2016: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2015: ¥8,710,000 (Direct Cost: ¥6,700,000、Indirect Cost: ¥2,010,000)
|
|---|
| Outline of Final Research Achievements |
We developed the bipolar pulse accelerator for the pulsed nitrogen ion beam which can generate an intense pulsed ion beam with higher purity than the conventional ion diode to perform experiments on the new pulsed ion implantation. By evaluating the ion species and the energy spectrum of the ion beam via a Thomson parabola spectrometer, it was confirmed that the ion beam consists of singly and doubly ionized nitrogen ions and the proton impurities and that the ions were successfully accelerated in the two-stage acceleration gap by applying the bipolar pulse. In addition, we developed the laser ion source for the pulsed aluminum ion beam and investigated the dependence of the ion current density on laser wavelength, laser incidence angle, and laser polarization. It was found that the obtained ion beam has the the good shot-to-shot reproducibility. We investigated the ion implantation and the surface annealing by irradiating semiconductor materials with the pulsed nitrogen ion beam.
|
