| Budget Amount *help |
¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000)
Fiscal Year 2018: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2017: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2016: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2015: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
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| Outline of Final Research Achievements |
In this study, I attempt to fabricate a CCD using SiC semiconductors that have high radiation hardness and durability under high temperature circumstances. First of all, basic principles such as a photo-response in SiC MOS capacitor and charge transfer in a MOS capacitor array have been verified. As a result, photo-responses were confirmed from irradiation at UV-green region in cubic SiC substrates as well as at UV region for hexagonal SiC substrates. MOS capacitor arrays were fabricated using photo-lithography, and I for the first time succeeded in charge transfer in SiC semiconductors. Gamma irradiation tests were carried out for SiC and Si MOS capacitors, and it was found that SiC MOS capacitors had about three orders higher gamma-ray durability compared with that of Si.
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