Development of an extreme environment resistive CCD using silicon carbide

• Project/Area Number: 15H03967
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Saitama University
• Principal Investigator: HIJIKATA Yasuto 埼玉大学, 理工学研究科, 准教授 (70322021)
• Project Period (FY): 2015-04-01 – 2019-03-31
• Project Status: Completed (Fiscal Year 2018)
• Budget Amount: ¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000); Fiscal Year 2018: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000); Fiscal Year 2017: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000); Fiscal Year 2016: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000); Fiscal Year 2015: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
• Keywords: 炭化ケイ素(SiC)半導体 / CCD / ガンマ線照射効果 / MOSキャパシタ / 界面準位密度 / 埋込チャネル構造 / イオン注入 / 放射線耐性 / 炭化ケイ素半導体 / 電荷輸送 / バンドギャップ / 埋め込みチャネル構造 / フォトリソグラフィー / 電子・電気材料 / 放射線 / 半導体物性 / 光応答 / 可視光応答 / 反転層形成 / 炭化ケイ素 / 紫外光応答 / 透明電極膜 / アレイ化

Outline of Final Research Achievements

In this study, I attempt to fabricate a CCD using SiC semiconductors that have high radiation hardness and durability under high temperature circumstances. First of all, basic principles such as a photo-response in SiC MOS capacitor and charge transfer in a MOS capacitor array have been verified. As a result, photo-responses were confirmed from irradiation at UV-green region in cubic SiC substrates as well as at UV region for hexagonal SiC substrates. MOS capacitor arrays were fabricated using photo-lithography, and I for the first time succeeded in charge transfer in SiC semiconductors. Gamma irradiation tests were carried out for SiC and Si MOS capacitors, and it was found that SiC MOS capacitors had about three orders higher gamma-ray durability compared with that of Si.

Academic Significance and Societal Importance of the Research Achievements

SiC半導体はパワーデバイスへの応用に極めて優れた物性値を有する上、自然酸化膜が良質な絶縁材料であるSiO2であることから、３０年来に亘り世界各地でパワーMOSFETの開発が行われてきた。しかし、耐極限環境半導体のニーズが今よりも低かったためか、Siを置き換えてSiCでCCDを作ろうという発想は、筆者の知る限りこれまで全く無かった。従って、今回初めてSiC-CCDの試作に着手し、原理検証に成功したことになる。また、今回MOSキャパシタで得られた1MGyというガンマ線耐性は、撮像素子としては突出した値である。
本研究を通じて、高い耐放射線性を有するイメージセンサ実現のための道筋を与えたと言える。

Research Products

• [Journal Article] Macroscopic simulations of the SiC thermal oxidation process based on the Si and C emission model (2019)
  • Author(s): Hijikata Yasuto
  • Journal Title: Diamond and Related Materials Volume: 92 Pages: 253-258
  • DOI: 10.1016/j.diamond.2019.01.012
  • Peer Reviewed
• [Journal Article] First-Principles Study of Oxygen-Related Defects on 4H-SiC Surface: The Effects of Surface Amorphous Structure (2019)
  • Author(s): Y. Matsushita, Y. Furukawa, Y. Hijikata, T. Ohshima
  • Journal Title: Applied Surface Science Volume: 464 Pages: 451-454
  • DOI: 10.1016/j.apsusc.2018.09.072
  • Peer Reviewed
• [Journal Article] Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals (2018)
  • Author(s): Y. Hijikata, T. Horii, Y. Furukawa, Y. Matsushita, T. Ohshima
  • Journal Title: J. Phys. Commun. Volume: 2 Issue: 11 Pages: 111003-111003
  • DOI: 10.1088/2399-6528/aaede4
  • Peer Reviewed / Open Access
• [Journal Article] Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing (2018)
  • Author(s): Y. Yamazaki, Y. Chiba, T. Makino, S. -I. Sato, N. Yamada, T. Satoh, Y. Hijikata, K. Kojima, S.-Y. Lee, T. Ohshima
  • Journal Title: J. Mater. Res. Volume: 33 Issue: 20 Pages: 3355-3361
  • DOI: 10.1557/jmr.2018.302
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface (2018)
  • Author(s): S.-i. Sato, T. Honda, T. Makino, Y. Hijikata, S.-Y. Lee, T. Ohshima
  • Journal Title: ACS Photonics Volume: 5 Issue: 8 Pages: 3159-3165
  • DOI: 10.1021/acsphotonics.8b00375
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Various Single Photon Sources Observed in SiC pin Diodes (2018)
  • Author(s): H. Tsunemi, T. Honda, T. Makino, S. Onoda, S.-I. Sato, Y. Hijikata, T. Ohshima
  • Journal Title: Mater. Sci. Forum Volume: 924 Pages: 204-207
  • DOI: 10.4028/www.scientific.net/msf.924.204
  • Peer Reviewed
• [Journal Article] Generation of stacking faults in 4H-SiC epilayer induced by oxidation (2018)
  • Author(s): Asafuji Ryosuke、Hijikata Yasuto
  • Journal Title: Materials Research Express Volume: 5 Issue: 1 Pages: 015903-015903
  • DOI: 10.1088/2053-1591/aaa00c
  • Peer Reviewed
• [Journal Article] Optimum Structures for Gamma-ray Radiation Resistant SiC-MOSFETs (2017)
  • Author(s): Satoshi Mitomo, Takuma Matsuda, Koichi Murata, Takashi Yokoseki, Takahiro Makino, Akinori Takeyama, Shi-nobu Onoda, Takeshi Ohshima, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, and Yasuto Hijikata
  • Journal Title: Physica Status Solidi A Volume: 214 Issue: 4 Pages: 1600425-1600425
  • DOI: 10.1002/pssa.201600425
  • Peer Reviewed
• [Journal Article] Impacts of Gate Bias and its Variation on Gamma-ray Irradiation Re-sistance of SiC MOSFETs (2017)
  • Author(s): Koichi Murata, Satoshi Mitomo, Takuma Matsuda, Takashi Yokoseki, Takahiro Makino, Shi-nobu Onoda, Akinori Takeyama, Takeshi Ohshima, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, and Yasuto Hijikata
  • Journal Title: Physica Status Solidi A Volume: 214 Issue: 4 Pages: 1600446-1600446
  • DOI: 10.1002/pssa.201600446
  • Peer Reviewed
• [Journal Article] Creation and Functionalization of Defects in SiC by Proton Beam Writing (2017)
  • Author(s): T. Ohshima, T. Honda, S. Onoda, T. Makino, M. Haruyama, T. Kamiya, T. Satoh, Y. Hijikata, W. Kada, O. Hanaizumi, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. V. Astakhov
  • Journal Title: Mater. Sci. Forum Volume: 897 Pages: 233-237
  • DOI: 10.4028/www.scientific.net/msf.897.233
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide (2017)
  • Author(s): H. Kraus, D. Simin, C. Kasper, Y. Suda, S. Kawabata, W. Kada, T. Honda, Y. Hijikata, T. Ohshima, V. Dyakonov, G. V. Astakhov
  • Journal Title: Nano Letters Volume: - Issue: 5 Pages: 2865-2870
  • DOI: 10.1021/acs.nanolett.6b05395
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Radiation Response of Silicon Carbide Metal-Oxide-Semiconductor Transistors in High Dose Region (2016)
  • Author(s): T. Ohshima, T. Yokoseki, K. Murata, T. Matsuda, S. Mitomo, H. Abe, T. Makino, S. Onoda, Y. Hijikata, Y. Tanaka, M. Kandori, S. Okubo, and T. Yoshie
  • Journal Title: Japanese Journal of Applied Physics Volume: 55 Issue: 1S Pages: 01AD01-01AD01
  • DOI: 10.7567/jjap.55.01ad01
  • NAID: 210000145957
  • Peer Reviewed
• [Journal Article] Change in Characteristics of SiC MOSFETs by Gamma-ray Irradiation at High Temperature (2016)
  • Author(s): Takuma Matsuda, Takashi Yokoseki, Satoshi Mitomo, Koichi Murata, Takahiro Makino, Hiroshi Abe, Akinori Takeyama, Shinobu Onoda, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima
  • Journal Title: Materials Science Forum Volume: 858 Pages: 860-863
  • DOI: 10.4028/www.scientific.net/msf.858.860
  • Peer Reviewed
• [Journal Article] Unified theory of silicon carbide oxidation based on the Si and C emission model (2016)
  • Author(s): Daisuke Goto and Yasuto Hijikata
  • Journal Title: Journal of Physics D: Applied Physics Volume: 49 Issue: 22 Pages: 225103-225103
  • DOI: 10.1088/0022-3727/49/22/225103
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers (2016)
  • Author(s): T. Miyazaki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata
  • Journal Title: Superlattices and Microstructures Volume: 99 Pages: 197-201
  • DOI: 10.1016/j.spmi.2016.03.005
  • Peer Reviewed
• [Journal Article] Improvement of radiation response of SiC MOSFETs under high temperature and humidity circumstance (2016)
  • Author(s): Akinori Takeyama, Takuma Matsuda, Takashi Yokoseki, Satoshi Mitomo, Koichi Murata, Takahiro Makino, Shinobu Onoda, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima
  • Journal Title: Japanese Journal of Applied Physics Volume: 55 Issue: 10 Pages: 104101-104101
  • DOI: 10.7567/jjap.55.104101
  • Peer Reviewed
• [Journal Article] Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate (2015)
  • Author(s): Yasuto Hijikata, Ryosuke Asafuji, Ryotaro Konno, Yurie Akasaka, Ryo Shinoda
  • Journal Title: AIP Advances Volume: 5 Pages: 067128-067128
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers (2015)
  • Author(s): Yutaro Miyano, Ryosuke Asafuji, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi
  • Journal Title: AIP Advances Volume: 5 Issue: 12 Pages: 127116-127116
  • DOI: 10.1063/1.4938126
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Presentation] 同位体酸素を用いたSiC表面に形成される単一光子源の構造推定 (2019)
  • Author(s): 土方 泰斗，松下 雄一郎，大島 武
  • Organizer: 第66回応用物理学会春季学術講演会 (9a-PB3-5) (大岡山) 2019.3.9.
• [Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成におけるイオンビーム照射の影響 (2019)
  • Author(s): 楢原 拓真，佐藤 真一郎，土方 泰斗，大島 武
  • Organizer: 第66回応用物理学会春季学術講演会 (11p-70A-14) (大岡山) 2019.3.11.
• [Presentation] γ線照射が炭化ケイ素表面発光中心の生成・発光特性に与える影響 (2019)
  • Author(s): 山崎 雄一郎，常見 大貴，佐藤 真一郎，土方 泰斗，大島 武
  • Organizer: 第66回応用物理学会春季学術講演会 (11p-70A-15) (大岡山) 2019.3.11.
• [Presentation] Growth Rate Simulations of Oxide Films on Silicon Carbide based on the Si and C Emission Model (2018)
  • Author(s): Yasuto Hijikata
  • Organizer: 2018 Conference on Intelligent Computing, Communication & Applied Technologies (CICCAT2018) (Zhuhai, China) 2018.12.25.
  • Int'l Joint Research / Invited
• [Presentation] Creating single photon sources in SiC pn diodes using proton beam writing (2018)
  • Author(s): Y. Chiba, Y. Yamazaki, T. Makino, S.-i. Sato, N. Yamada, T. Sato, K. Kojima, S.-Y. Lee, T. Ohshima, Y. Hijikata
  • Organizer: 2018 Conference on Intelligent Computing, Communication & Applied Technologies (CICCAT2018) (Zhuhai, China) 2018.12.25.
  • Int'l Joint Research
• [Presentation] Gate Structure Dependence of Charge Collection and Single Event Burnout Tolerance for SiC MOSFETs (2018)
  • Author(s): T. Makino, S. Takano, S. Harada, Y. Hijikata, and T. Ohshima
  • Organizer: 2018 IEEE Nuclear and Space Radiation Effects Conference (NSREC) (Hawaii, USA) (PG2) 2018.7.18.
  • Int'l Joint Research
• [Presentation] A Macroscopic Simulation of the SiC Thermal Oxidation Process based on the Si and C Emission Model (2018)
  • Author(s): Yasuto Hijikata
  • Organizer: The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM) 2018 (Beijing, China) 2018.7.11.
  • Int'l Joint Research / Invited
• [Presentation] Radiation Efficiency Enhancement of Single Photon Source near Stacking Fault in 4H-SiC Epilayer (2018)
  • Author(s): Y. Hijikata, Y. Furukawa, Y.-i. Matsushita, and T. Ohshima
  • Organizer: European Materials Research Society (E-MRS) 2018 Spring Meeting (Strasbourg, France) (I.8.3) 2018.6.20.
  • Int'l Joint Research
• [Presentation] SiC半導体を用いた非接触給電装置の耐放射線性評価 (2018)
  • Author(s): 赤川拓，川原藤樹，金子裕良，武山昭憲，大島武，土方泰斗
  • Organizer: 先進パワー半導体分科会第5回講演会 (IIB-28) (京都) 2018.11.7.
• [Presentation] SiC表面に形成される単一光子源の酸化膜厚依存性 (2018)
  • Author(s): 常見 大貴，佐藤 真一郎，山﨑 雄一，牧野 高絋，土方 泰斗，大島 武
  • Organizer: 先進パワー半導体分科会第5回講演会 (IIB-24) (京都) 2018.11.7.
• [Presentation] プロトンビーム描画により形成したシリコン空孔の光学特性劣化要因に関する研究 (2018)
  • Author(s): 山﨑 雄一，千葉 陽史，牧野 高絋，佐藤 真一郎，山田 尚人，佐藤 隆博，加田 渉，土方 泰斗，児島 一聡，S.-Y.Lee，大島 武
  • Organizer: 先進パワー半導体分科会第5回講演会 (IIB-5) (京都) 2018.11.7.
• [Presentation] プロトンビーム描画により形成されたSiC pnダイオード中シリコン空孔のODMR測定 (2018)
  • Author(s): 千葉 陽史，山﨑 雄一，牧野 高絋，佐藤 真一郎，山田 尚人，佐藤 隆博，児島 一聡，土方 泰斗，大島 武
  • Organizer: 先進パワー半導体分科会第5回講演会 (IIA-10) (京都) 2018.11.7.
• [Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成と発光特性 (2018)
  • Author(s): 楢原拓真，佐藤 真一郎，土方泰斗，大島武
  • Organizer: 先進パワー半導体分科会第5回講演会 (IA-7) (京都) 2018.11.6.
• [Presentation] プロトンビーム描画プロセスがSiC pnダイオード中に導入したシリコン空孔の光学特性に与える影響 (2018)
  • Author(s): 山﨑 雄一，千葉 陽史，牧野 高絋，山田 尚人，佐藤 隆博，土方 泰斗，児島 一聡，大島 武
  • Organizer: 第79回応用物理学会秋季学術講演会 (21a-141-10) (名古屋) 2018.9.21.
• [Presentation] プロトンビーム描画を用いてSiCデバイス中に作製したシリコン空孔のODMR測定 (2018)
  • Author(s): 千葉 陽史，山﨑 雄一，牧野 高絋，佐藤 真一郎，山田 尚人，佐藤 隆博，児島 一聡，土方 泰斗，大島 武
  • Organizer: 第79回応用物理学会秋季学術講演会 (21a-141-11) (名古屋) 2018.9.21.
• [Presentation] SiC p+nn+ダイオード中の単一光子源の発光特性に関する考察 (2018)
  • Author(s): 常見 大貴，佐藤 真一郎，山﨑 雄一，牧野 高絋，土方 泰斗，大島 武
  • Organizer: 第79回応用物理学会秋季学術講演会 (21a-141-12) (名古屋) 2018.9.21.
• [Presentation] SiC半導体表面に形成した単一光子源の低温フォトルミネッセンス特性 (2018)
  • Author(s): 音嶋俊介，松下雄一郎，大島武，土方泰斗
  • Organizer: 第79回応用物理学会秋季学術講演会 (21a-141-13) (名古屋) 2018.9.21.
• [Presentation] SiC半導体が実現する室温電子駆動量子センサ (2018)
  • Author(s): 土方 泰斗，牧野 高紘，佐藤 真一郎，山崎雄一，大島 武
  • Organizer: 第2回量子生命科学研究会第２回学術集会 (P1) (東大本郷) 2018.5.10.
• [Presentation] Contraolled 3D Placement of Vacancy Spins for Quantum Applications in Silicon Carbide (2017)
  • Author(s): H. Kraus, D. Simin, C. Kasper, W. Kada, Y. Hijikata, C. J. Cochrane, T. Ohshima, V. Dyakonov, G. Astakhov
  • Organizer: Inter. Conf. SiC and Related Materials (ICSCRM2017)(Washington D.C.)
  • Int'l Joint Research
• [Presentation] Various single photon sources observed in SiC pin diodes (2017)
  • Author(s): H. Tsunemi, T. Honda, T. Makino, S. Onoda, S-I. Sato, Y. Hijikata, and T. Ohshima
  • Organizer: Inter. Conf. SiC and Related Materials (ICSCRM2017)(Washington D.C.)
  • Int'l Joint Research
• [Presentation] Enhanced Single Photon Emission near Stacking Fault in 4H-SiC Epilayer (2017)
  • Author(s): Y. Hijikata, S. Akahori, and T. Ohshima
  • Organizer: Inter. Conf. SiC and Related Materials (ICSCRM2017)(Washington D.C.)
  • Int'l Joint Research
• [Presentation] Functionalization of Silicon Carbide by Particle Irradiation toward Quantum Devices (2017)
  • Author(s): T. Ohshima, T. Honda, H. Tsunemi, T. Makino, S.-i. Sato, S. Onoda, Y. Hijikata
  • Organizer: 2017 MRS Fall meeting(Boston, USA)
  • Int'l Joint Research / Invited
• [Presentation] 負ゲートバイアス印加がSiC MOSFETのガンマ線照射劣化に及ぼす影響 (2017)
  • Author(s): 武山 昭憲，牧野 高紘，大久保 秀一，田中 雄季，神取 幹郎，吉江 徹，土方 泰斗，大島 武
  • Organizer: 第78回応用物理学会秋季学術講演会 (福岡)
• [Presentation] 重イオン照射によるSiC-MOSFET中の誘起収集電荷の発生過程 (2017)
  • Author(s): 高野 修平，牧野 高紘，原田 信介，土方 泰斗，大島 武
  • Organizer: 第78回応用物理学会秋季学術講演会 (福岡)
• [Presentation] SiC p+nn+ダイオード中の発光中心のバイアス電圧による発光強度変化 (2017)
  • Author(s): 本多 智也、常見 大貴、児島 一聡、佐藤 真一郎、牧野 高紘、小野田 忍、土方 泰斗、大島 武
  • Organizer: 第78回応用物理学会秋季学術講演会 (福岡)
• [Presentation] SiC p+nn+ダイオードに形成される単一光子源の発光スペクトル (2017)
  • Author(s): 常見 大貴、本多 智也、牧野 高絋、小野田 忍、佐藤 真一郎、土方 泰斗、大島 武
  • Organizer: 第78回応用物理学会秋季学術講演会 (福岡)
• [Presentation] 4H-SiCエピ層における積層欠陥近傍の単一光子源の発光特性 (2017)
  • Author(s): 赤堀 周平、古川 頼誉、松下 雄一郎、大島 武、土方 泰斗
  • Organizer: 第78回応用物理学会秋季学術講演会 (福岡)
• [Presentation] SiC p+nn+ダイオードに形成される単一光子源の発光特性 (2017)
  • Author(s): 常見 大貴、本多 智也、牧野 高絋、小野田 忍、佐藤 真一郎、土方 泰斗、大島 武
  • Organizer: 先進パワー半導体分科会第3回講演会 (名古屋)
• [Presentation] 負ゲートバイアス印加によるSiC MOSFETのガンマ線照射劣化挙動 (2017)
  • Author(s): 武山 昭憲，松田 拓磨，三友 啓，村田 航一，牧野 高紘，小野田 忍，大久保 秀一，田中 雄季，神取 幹郎，吉江 徹，土方 泰斗，大島 武
  • Organizer: 先進パワー半導体分科会第3回講演会 (名古屋)
• [Presentation] トレンチゲート型SiC-MOSFETにおける放射線誘起破壊現象の物理過程探索と耐性評価 (2017)
  • Author(s): 高野 修平，牧野 高紘，原田 信介，土方 泰斗，大島 武
  • Organizer: 先進パワー半導体分科会第3回講演会 (名古屋)
• [Presentation] SiC 中の積層欠陥が単一光子光源の発光波長に及ぼす影響の理論的分析 (2017)
  • Author(s): 古川頼誉，土方泰斗，大島武，松下雄一郎
  • Organizer: 先進パワー半導体分科会第3回講演会 (名古屋)
• [Presentation] バイアス印加によるSiCダイオード中の発光中心の発光強度変化 (2017)
  • Author(s): 本多智也，常見大貴，小野田忍，牧野高紘，佐藤真一郎，土方泰斗，大島武
  • Organizer: 先進パワー半導体分科会第3回講演会 (名古屋)
• [Presentation] チャネルサイズがSiC-MOSFETのガンマ線照射効果に及ぼす影響 (2017)
  • Author(s): 武山昭憲，牧野高紘，大久保秀一，田中雄季，神取幹郎，吉江徹，土方泰斗，大島武
  • Organizer: 第65回応用物理学会春季学術講演会 (早稲田)
• [Presentation] 4H-SiCエピ層中の積層欠陥近傍における単一光子源の発光効率向上 (2017)
  • Author(s): 赤堀周平，古川頼誉，松下雄一郎，大島武，土方泰斗
  • Organizer: 第65回応用物理学会春季学術講演会 (早稲田)
• [Presentation] 4H-SiC酸化によるアモルファス構造が表面単一光子源に与える影響の理論的分析 (2017)
  • Author(s): 古川頼誉，土方泰斗，大島武，松下雄一郎
  • Organizer: 第65回応用物理学会春季学術講演会 (早稲田)
• [Presentation] プロトンビーム描画を用いたSiC pinダイオード中への発光中心の形成 (2017)
  • Author(s): 千葉陽史，常見 大貴，本多 智也，牧野 高紘，佐藤 信一郎，山田尚人，佐藤隆博，土方 泰斗，大島 武
  • Organizer: 第65回応用物理学会春季学術講演会 (早稲田)
• [Presentation] Generation of stacking faults in 4H-SiC epilayer during oxidation (2016)
  • Author(s): Ryosuke Asafuji and Yasuto Hijikata
  • Organizer: Energy Materials Nanotechnology (EMN) on Epitaxy 2016
  • Place of Presentation: Budapest, Hungary
  • Year and Date: 2016-09-05
  • Int'l Joint Research / Invited
• [Presentation] SiC酸化膜界面のパッシベーション技術 (2016)
  • Author(s): 土方 泰斗
  • Organizer: 応用物理学会先進パワー半導体分科会第２回個別討論会
  • Place of Presentation: 名駅ＡＢＣビル（名古屋中村区）
  • Year and Date: 2016-08-01
  • Invited
• [Presentation] Impacts of Gate Bias and its Variation on Gamma-ray Irradiation Resistance of SiC MOSFETs (2016)
  • Author(s): Koichi Murata, Satoshi Mitomo, Takuma Matsuda, Takashi Tokoseki, Takahiro Makino, Akinori Takeyama, Shinobu Onoda,Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Takeshi Ohshima , Yasuto Hijikata
  • Organizer: European Materials Research Society (E-MRS) 2016 Spring Meeting
  • Place of Presentation: Lille, France
  • Year and Date: 2016-05-02
  • Int'l Joint Research
• [Presentation] Optimum Structures for Gamma-ray Radiation Resistant SiC-MOSFETs (2016)
  • Author(s): S. Mitomo, T. Matsuda, K. Murata, T. Tokoseki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, S. Okubo, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata
  • Organizer: European Materials Research Society (E-MRS) 2016 Spring Meeting
  • Place of Presentation: Lille, France
  • Year and Date: 2016-05-02
  • Int'l Joint Research
• [Presentation] A Development of Super Radiation-Hardened Power Electronics Using Silicon Carbide Semiconductors -Toward MGy-Class Radiation Resistivity- (2015)
  • Author(s): Y. Hijikata, S. Mitomo, T. Matsuda, K. Murata, T. Yokoseki, T. Makino, A. Takeyama, S. Onoda, Y. Tanaka, M. Kandori, T. Yoshie, and T. Ohshima
  • Organizer: The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA)
  • Place of Presentation: 桐生市市民文化会館（群馬県桐生市）
  • Year and Date: 2015-11-11
  • Int'l Joint Research
• [Presentation] Change in Characteristics of SiC MOSFETs by Gamma-ray Irradiation at High Temperature (2015)
  • Author(s): Takuma Matsuda, Takashi Tokoseki, Satoshi Mitomo, Koichi Murata, Takahiro Makino, Hiroshi Abe, Akinori Takeyama, Shinobu Onoda, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima
  • Organizer: International Conference on SiC and Related Materials (ICSCRM2015)
  • Place of Presentation: Giargini Naxos, Italy
  • Year and Date: 2015-10-04
  • Int'l Joint Research
• [Presentation] Si及びC原子放出モデルに基づくSiC熱酸化メカニズムの統合理論 (2015)
  • Author(s): 土方泰斗、浅藤亮祐
  • Organizer: 第76回秋季応用物理学会講演会
  • Place of Presentation: 名古屋国際会議場（愛知県名古屋市）
  • Year and Date: 2015-09-13
• [Presentation] Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers (2015)
  • Author(s): T.Miyazaki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata
  • Organizer: The 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-XVI 2015)
  • Place of Presentation: Suzhou, China
  • Year and Date: 2015-09-08
  • Int'l Joint Research
• [Presentation] SiC熱酸化における界面からのSi、C放出と界面欠陥 (2015)
  • Author(s): 土方 泰斗
  • Organizer: 応用物理学会先進パワー半導体分科会第１回個別討論会
  • Place of Presentation: 埼玉大学東京ステーションカレッジ（東京都千代田区）
  • Year and Date: 2015-08-04
  • Invited
• [Remarks] 土方泰斗ウェブページ
  • URL: http://www.opt.ees.saitama-u.ac.jp/~yasuto/index-j.html
• [Remarks] Paper List vol.5
  • URL: http://www.opt.ees.saitama-u.ac.jp/~yasuto/Gyouseki_YHiji5.html